Peeling of Nano-Particle (PNP) process for localized material removing on a silicon carbide (SiC) surface by controlling of magnetic field

通过控制磁场来去除碳化硅 (SiC) 表面上的局部材料的纳米粒子 (PNP) 剥离工艺

• 批准号: 21J14569
• 负责人: パームパッデーチャークン ティティパット
• 金额: $ 0.96万
• 依托单位: Kyushu Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for JSPS Fellows
• 财政年份: 2021
• 资助国家: 日本
• 起止时间: 2021-04-28 至 2023-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21J14569/
• 关键词: silicon carbide; peeling of nano-particle; nano-scale phenomena; in-situ observation; DLVO force; localized remote control; evanescent field; wet process; magnetic nanoparticles; pnp process; in situ observation; core-shell particle; electroma

For the purpose of localized removing the material on a SiC surface by the Peeling of Nano-Particle (PNP) process, the controllability of the particles and the contact phenomenon on the surface were confirmed.Optical systems were developed applying an evanescent field microscopy for directly observing only the particle approaching the surface during generating a magnetic field under the surface. In this experiment, φ50-100 nm sized Fe3O4 particles in KOH solution (pH10 value) could evidently be magnetically pulled in and pulled out from the SiC surface. During generating the pulling magnetic field, we found that the particles were pulled close to the surface with decreased Brownian motion ranges that would be limited by the DLVO force. However, the particles would not yet completely contact the SiC surface due to the against electric double layer, which relates to the height z of the particle on the SiC surface. The height z of the particle on the surface was measured by applying the multi-wavelength evanescent fields. By our measuring method, the particles would be pulled close to the surface at the height z≒20-25 nm by the pulling magnetic field ≒40 mT, which calculated the pulling magnetic force ≒ 10-30 fN. To let those magnetic particles contact on the SiC surface to be peeled, the magnetic field should be stronger 1.5-2 times (60-80 mT) for generating the pulling magnetic force ≒40-80 fN. This measuring action forces technique by the PNP process would be an index to explain the material removal mechanism to other hard material machining processes.

为了通过纳米粒子剥离（PNP）工艺局部去除SiC表面上的材料，确认了粒子的可控性和表面上的接触现象。开发了应用倏逝场显微镜的光学系统，用于在表面下产生磁场时仅直接观察接近表面的粒子。在本实验中，KOH溶液（pH10值）中的φ50-100 nm大小的Fe3O4颗粒可以明显地被磁力从SiC表面拉入和拉出。在产生拉磁场的过程中，我们发现粒子被拉近表面，布朗运动范围减小，受到 DLVO 力的限制。然而，由于双电层的存在，颗粒尚未完全接触 SiC 表面，这与 SiC 表面颗粒的高度 z 有关。通过应用多波长倏逝场测量颗粒在表面上的高度z。通过我们的测量方法，颗粒会被≒40 mT的牵引磁场在高度z≒20-25 nm处拉近表面，计算出牵引磁力≒ 10-30 fN。为了让这些磁性颗粒接触到待剥离的SiC表面，磁场应强1.5-2倍（60-80 mT），以产生拉磁力≒40-80 fN。 PNP 工艺的这种测量作用力技术将成为解释其他硬质材料加工工艺的材料去除机制的指标。

项目成果

Study on Nanoscale Observatory in Polishing Phenomena applying Optical Evanescent Field - 2nd Report : 4H-SiC Polishing with Nano-Silica Abrasive -

应用光学倏逝场的抛光现象纳米观测研究 - 第二次报告：使用纳米二氧化硅磨料进行 4H-SiC 抛光 -

• 发表时间: 2021
• 作者: ◯Thitipat Permpatdechakul;Panart Khajornrungruang;Keisuke Suzuki;Akiyoshi Baba
• 通讯作者: Akiyoshi Baba

Study on Action Forces on Nano-particle to Flat Surface using Localized Remote Magnetic Field - Estimation of action forces by applying multi-wavelength evanescent field -

使用局域远程磁场研究纳米粒子对平面的作用力 - 通过应用多波长倏逝场估计作用力 -

• 发表时间: 2023
• 作者: ◯Thitipat Permpatdechakul;Panart Khajornrungruang;Keisuke Suzuki;Daiki Goto
• 通讯作者: Daiki Goto

Study on a novel peeling of nano-particle (PNP) process for localized material removal on a 4H-SiC surface by controllable magnetic field (accepted)

通过可控磁场去除 4H-SiC 表面局部材料的新型纳米颗粒剥离 (PNP) 工艺研究（已录用）

• 发表时间: 2023
• 期刊: International Journal of Automation Technology (IJAT)
• 作者: Thitipat Permpatdechakul;Panart Khajornrungruang;Keisuke Suzuki;Shotaro Kutomi
• 通讯作者: Shotaro Kutomi

Study on localized material removal on a hard material surface by a controllable peeling of nano-particle (PNP) process

可控纳米颗粒剥离（PNP）工艺对硬质材料表面局部材料去除的研究

• 发表时间: 2022
• 作者: ◯Thitipat Permpatdechakul;Panart Khajornrungruang;Keisuke Suzuki;Daiki Goto;Shotaro Kutomi
• 通讯作者: Shotaro Kutomi