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Development of the novel next generation III-Nitride semiconductor wurtzite AlPN

新型下一代III族氮化物半导体纤锌矿AlPN的开发

基本信息

批准号：
21K03418
负责人：
PRISTOVSEK M.
金额：
$ 2.66万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2021
资助国家：
日本
起止时间：
2021-04-01 至 2024-03-31
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21K03418/
关键词：
III 窒化物半導体 wurzite AlGaPN 2次元電子ガス III-N epitaxy III-Nitride epitaxy wurzite AlPN

项目摘要

The work continued on improved growth conditions for AlPN layers. It was found out that too much NH3 during growth was also pushing the P on an unwanted Al-lattice place. Using the recently delivered small size Mass flow Controller for P and NH3, controlled growth of pure AlPN layer have been achieved up to 6% in January 2023.Transitor structure have been made and the exisitence of a two/dimensional electron gase was confirmed using variable temperature Hall measurements. The mobilities were still lower than expected which is due to the reletivelz rough interfaces that are currentlz in the focus of research.The results so far have been presented at two international conferences, IC-MOVPE in June 2022 in Stuttgart, Germany and the IWN-2022 in October in Berlin, Germany and published in the peer-reviewed Journal of Crystal Growth (M. Pristovsek J, Crystal Growth 600 (2022) 126908 http.//doi,orf/10.1016/j.jcrysgro.2022.126908 ).From Dec. 1st an international joint research project on AlPN barrier growth for high-electron mobitlity transistors (HEMTs) started together with Ferdinand-Braun-Institute in Berlin, Germany. As part a new Postdoc was hired, so progress in 2023 is expected to increase. Also the project included a cooperature with a young research focussing on Transmission electron microcopy (TEM), which is essential for the further optimisation of interfaces.

工作继续改善AlPN层的生长条件。发现在生长期间过多的NH3也将P推到不需要的Al晶格位置上。2023年1月，利用最近交付的小尺寸P和NH3质量流量控制器，实现了纯AlPN层的可控生长，生长率达到6%。到目前为止，该结果已在两个国际会议上发表，即2022年6月在德国斯图加特举行的IC-MOVPE和10月在德国柏林举行的IWN-2022，并发表在同行评审的Journal of Crystal Growth（M. Pristovsek J，晶体生长600（2022）126908 http.// doi，orf/10.1016/j.jcrysgro.2022.126908）。从12月1日起，与位于德国柏林的Ferdinand-Braun-Institute共同启动了一项关于高电子迁移率晶体管（HEMT）AlPN势垒生长的国际联合研究项目。作为一部分，聘请了一名新的博士后，因此预计2023年的进展将增加。此外，该项目还包括一个合作实验室，该实验室专注于透射电子显微镜（TEM）的年轻研究，这对于进一步优化界面至关重要。