Development of the novel next generation III-Nitride semiconductor wurtzite AlPN

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The work continued on improved growth conditions for AlPN layers. It was found out that too much NH3 during growth was also pushing the P on an unwanted Al-lattice place. Using the recently delivered small size Mass flow Controller for P and NH3, controlled growth of pure AlPN layer have been achieved up to 6% in January 2023.Transitor structure have been made and the exisitence of a two/dimensional electron gase was confirmed using variable temperature Hall measurements. The mobilities were still lower than expected which is due to the reletivelz rough interfaces that are currentlz in the focus of research.The results so far have been presented at two international conferences, IC-MOVPE in June 2022 in Stuttgart, Germany and the IWN-2022 in October in Berlin, Germany and published in the peer-reviewed Journal of Crystal Growth (M. Pristovsek J, Crystal Growth 600 (2022) 126908 http.//doi,orf/10.1016/j.jcrysgro.2022.126908 ).From Dec. 1st an international joint research project on AlPN barrier growth for high-electron mobitlity transistors (HEMTs) started together with Ferdinand-Braun-Institute in Berlin, Germany. As part a new Postdoc was hired, so progress in 2023 is expected to increase. Also the project included a cooperature with a young research focussing on Transmission electron microcopy (TEM), which is essential for the further optimisation of interfaces.