Reaction behavior of anionic oxidizing agents in the metal assisted etching of silicon

阴离子氧化剂在金属辅助硅刻蚀中的反应行为

• 批准号: 314964421
• 负责人: Professor Dr. Jörg Acker
• 金额: --
• 依托单位: Fachgebiet Physikalische Chemie
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2016
• 资助国家: 德国
• 起止时间: 2015-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/314964421?language=en
• 关键词: Reaction; behavior; anionic; oxidizing; agents

The submitted project is addressed to the impact of anionic oxidizing agents on the reaction pathways of metal assisted silicon etching as well as to the reduction reactions of the oxidizing agents itself.The first topic in this investigation is devoted to the reactivity of anionic oxidizing agents against metal layers, in particular with the interactions of metal layers with anionic oxidizing agents and the reduction pathways of involved species. The second topic deals with typical reactions which are insufficiently explained in literature so far. These are the varying stoichiometric copper-silicon ratios while copper deposition on silicon, the behavior of perchlorate on metal-silicon composites and metal silicide phases, and the impact of halogenides on the degradation of anionic oxidizing agents. The third topic is focused on the investigation of current theories and models concerning the formation of hydrogen within silicon etching processes, hydrogen involved degradation processes of anionic oxidizing agents, and hole transfers from the metal surface to silicon.To study these phenomena series of different experiments are proposed for batch tests under well-defined conditions. By means of different analytical methods the compositions in the solid, liquid, and gaseous phases are quantified in order to identify the reduction pathway of the oxidizing agents, to monitor the found product distribution, and to determine kinetic parameters of the involved reactions. These data should be used to evaluate the current theories of metal-assisted etching of silicon, to improve them or to establish new models if it is required.

本课题主要研究阴离子氧化剂对金属辅助硅刻蚀反应途径的影响以及氧化剂本身的还原反应，第一个课题是研究阴离子氧化剂对金属层的反应性，特别是金属层与阴离子氧化剂的相互作用以及相关物种的还原途径。第二个主题涉及迄今为止在文献中解释得不够的典型反应。这些是不同的化学计量比的铜-硅比，而铜沉积在硅上，高氯酸盐的金属-硅复合材料和金属硅化物相的行为，和卤化物对阴离子氧化剂的降解的影响。第三个主题是集中在当前的理论和模型的调查有关氢的形成在硅蚀刻过程中，氢涉及的阴离子氧化剂的降解过程中，从金属表面到silicon.To研究这些现象的一系列不同的实验提出了批测试在定义明确的条件下。通过不同的分析方法，在固相，液相和气相中的组合物被量化，以确定氧化剂的还原途径，监测发现的产物分布，并确定所涉及的反应的动力学参数。这些数据应被用来评估现有的金属辅助硅蚀刻理论，以改善他们或建立新的模型，如果需要的话。