Reaction behavior of anionic oxidizing agents in the metal assisted etching of silicon

提交的项目是关于阴离子氧化剂对金属辅助硅刻蚀反应路径的影响以及氧化剂本身的还原反应。本研究的第一个主题是阴离子氧化剂对金属层的反应性，特别是金属层与阴离子氧化剂的相互作用以及所涉及的物种的还原路径。第二个主题涉及到文献中尚未得到充分解释的典型反应。这些是铜在硅上沉积时不同的化学计量比，高氯酸盐在金属-硅复合材料和金属硅化物相上的行为，以及卤化物对阴离子氧化剂降解的影响。第三个主题是关于硅刻蚀过程中氢的形成、氢涉及阴离子氧化剂的降解过程以及空穴从金属表面转移到硅中的现有理论和模型的研究。为了研究这些现象，提出了一系列不同的实验，以在明确的条件下进行批量测试。通过不同的分析方法对固、液、气相的组成进行了定量，以确定氧化剂的还原途径，监测所发现的产物分布，并确定所涉及的反应的动力学参数。这些数据应该被用来评估当前的金属辅助硅刻蚀理论，以改进它们，或者在需要时建立新的模型。

The submitted project is addressed to the impact of anionic oxidizing agents on the reaction pathways of metal assisted silicon etching as well as to the reduction reactions of the oxidizing agents itself.The first topic in this investigation is devoted to the reactivity of anionic oxidizing agents against metal layers, in particular with the interactions of metal layers with anionic oxidizing agents and the reduction pathways of involved species. The second topic deals with typical reactions which are insufficiently explained in literature so far. These are the varying stoichiometric copper-silicon ratios while copper deposition on silicon, the behavior of perchlorate on metal-silicon composites and metal silicide phases, and the impact of halogenides on the degradation of anionic oxidizing agents. The third topic is focused on the investigation of current theories and models concerning the formation of hydrogen within silicon etching processes, hydrogen involved degradation processes of anionic oxidizing agents, and hole transfers from the metal surface to silicon.To study these phenomena series of different experiments are proposed for batch tests under well-defined conditions. By means of different analytical methods the compositions in the solid, liquid, and gaseous phases are quantified in order to identify the reduction pathway of the oxidizing agents, to monitor the found product distribution, and to determine kinetic parameters of the involved reactions. These data should be used to evaluate the current theories of metal-assisted etching of silicon, to improve them or to establish new models if it is required.