Elucidation of plasma-assisted atomic layer etching (ALE) mechanism for magnetic materials using organic gas
Elucidation of plasma-assisted atomic layer etching (ALE) mechanism for magnetic materials using organic gas
批准号:
20J10393
负责人:
YASSIN Abdulrahman Hikm (2021)
金额:
$1.47万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for JSPS Fellows
财政年份:
2020
资助国家:
日本
项目状态:
已结题
起止时间:
2020-04-24 至 2022-03-31
中文摘要
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英文摘要
The mechanisms of thermal atomic layer etching (ALE) for metals have been elucidated in this study. The chemical interaction of Beta-diketon, i.e., hexafluoroacetylacetone (hfacH), trifluoroacetylacetone (tfacH), and acetylacetone (acacH), with nickel (Ni) and nickel oxide (NiO) have been investigated. Then, the best etchant, which is hfacH molecules, have been nominated and examined with a magnesium oxide (MgO) surface and we could successfully generalize the investigated mechanism for all metals using density functional theory (DFT) simulation. Because of the pandemic COVID-19, I could not travel to Prof. Kessel lab in Eindhoven University of Technology (TU/e) to run some experiments. However, I will writing and publishing the remaining results during my new fellowship.
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Mechanisms of Thermal Atomic Layer Etching (ALE) of Nickel by Acetylacetone (acacH) Molecules
乙酰丙酮 (acacH) 分子对镍进行热原子层蚀刻 (ALE) 的机制
DOI:
--
发表时间:
2021
期刊:
影响因子:
--
作者:
[Abdulrahman H. Basher, M. Krstic, T. Takeuchi, T. Ito, M. Kiuchi, K. Karahashi, W. Wenzel, and S. Hamaguchi]
通讯作者:
and S. Hamaguchi
Mechanisms of Thermal Atomic Layer Etching (ALE) for Metals
金属热原子层蚀刻 (ALE) 机制
DOI:
--
发表时间:
2021
期刊:
影响因子:
--
作者:
[Abdulrahman H. Basher, M. Krstic, T. Takeuchi, T. Ito, K. Fink, M. Kiuchi, K. Karahashi, W. Wenzel, and S. Hamaguchi]
通讯作者:
and S. Hamaguchi
DOI:
10.35848/1347-4065/aba9a7
发表时间:
2020-08
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[Abdulrahman H. Basher;I. Hamada;S. Hamaguchi]
通讯作者:
Abdulrahman H. Basher;I. Hamada;S. Hamaguchi
Mechanisms of Self Limiting Processes in Thermal Atomic Layer Etching of Nickel by beta-diketones
β-二酮热原子层蚀刻镍的自限过程机制
DOI:
--
发表时间:
2021
期刊:
影响因子:
--
作者:
[Abdulrahman H. Basher, I. Hamada, T. Ito, K. Karahashi, and S. Hamaguchi]
通讯作者:
and S. Hamaguchi
Erratum: “Formation and desorption of nickel hexafluoroacetylacetonate Ni(hfac)2 on a nickel oxide surface in atomic layer etching processes” [J. Vac. Sci. Technol. A 38, 052602 (2020)]
勘误:“原子层蚀刻过程中六氟乙酰丙酮镍 Ni(hfac)2 的形成和解吸”[J. Vac. Technol.
DOI:
10.1116/6.0001319
发表时间:
2021
期刊:
Journal of Vacuum Science and Technology A
影响因子:
2.9
作者:
[Basher Abdulrahman H., Krstic Marjan, Fink Karin, Ito Tomoko, Karahashi Kazuhiro, Wenzel Wolfgang, Hamaguchi Satoshi]
通讯作者:
Hamaguchi Satoshi
共 9 条