Elucidation of plasma-assisted atomic layer etching (ALE) mechanism for magnetic materials using organic gas

使用有机气体阐明磁性材料的等离子体辅助原子层蚀刻（ALE）机制

• 批准号: 20J10393
• 负责人: YASSIN Abdulrahman Hikm (2021)
• 金额: $ 1.47万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for JSPS Fellows
• 财政年份: 2020
• 资助国家: 日本
• 起止时间: 2020-04-24 至 2022-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-20J10393/
• 关键词: Thermal ALE; DFT simulation; Etching of metals

The mechanisms of thermal atomic layer etching (ALE) for metals have been elucidated in this study. The chemical interaction of Beta-diketon, i.e., hexafluoroacetylacetone (hfacH), trifluoroacetylacetone (tfacH), and acetylacetone (acacH), with nickel (Ni) and nickel oxide (NiO) have been investigated. Then, the best etchant, which is hfacH molecules, have been nominated and examined with a magnesium oxide (MgO) surface and we could successfully generalize the investigated mechanism for all metals using density functional theory (DFT) simulation. Because of the pandemic COVID-19, I could not travel to Prof. Kessel lab in Eindhoven University of Technology (TU/e) to run some experiments. However, I will writing and publishing the remaining results during my new fellowship.

本文阐述了金属热原子层腐蚀的机理。β-二酮的化学相互作用，即，研究了六氟乙酰丙酮（hfacH）、三氟乙酰丙酮（tfacH）和乙酰丙酮（acacH）与镍（Ni）和氧化镍（NiO）反应。然后，最好的蚀刻剂，这是hfacH分子，已被提名和审查与氧化镁（MgO）表面，我们可以成功地概括了所有金属的研究机制，使用密度泛函理论（DFT）模拟。由于COVID-19大流行，我无法前往埃因霍温理工大学（TU/e）的凯塞尔教授实验室进行一些实验。然而，我将在我的新研究期间撰写和发表剩余的结果。

项目成果

Mechanisms of Thermal Atomic Layer Etching (ALE) of Nickel by Acetylacetone (acacH) Molecules

乙酰丙酮 (acacH) 分子对镍进行热原子层蚀刻 (ALE) 的机制

• 发表时间: 2021
• 作者: Abdulrahman H. Basher;M. Krstic;T. Takeuchi;T. Ito;M. Kiuchi;K. Karahashi;W. Wenzel;and S. Hamaguchi
• 通讯作者: and S. Hamaguchi

Mechanisms of Thermal Atomic Layer Etching (ALE) for Metals

金属热原子层蚀刻 (ALE) 机制

• 发表时间: 2021
• 作者: Abdulrahman H. Basher;M. Krstic;T. Takeuchi;T. Ito;K. Fink;M. Kiuchi;K. Karahashi;W. Wenzel;and S. Hamaguchi
• 通讯作者: and S. Hamaguchi

Self-limiting processes in thermal atomic layer etching of nickel by hexafluoroacetylacetone

• DOI: 10.35848/1347-4065/aba9a7
• 发表时间: 2020-08
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Abdulrahman H. Basher;I. Hamada;S. Hamaguchi

Mechanisms of Self Limiting Processes in Thermal Atomic Layer Etching of Nickel by beta-diketones

β-二酮热原子层蚀刻镍的自限过程机制

• 发表时间: 2021
• 作者: Abdulrahman H. Basher;I. Hamada;T. Ito;K. Karahashi;and S. Hamaguchi
• 通讯作者: and S. Hamaguchi

Erratum: “Formation and desorption of nickel hexafluoroacetylacetonate Ni(hfac)2 on a nickel oxide surface in atomic layer etching processes” [J. Vac. Sci. Technol. A 38, 052602 (2020)]

勘误：“原子层蚀刻过程中六氟乙酰丙酮镍 Ni(hfac)2 的形成和解吸”[J. Vac. Technol.

• DOI: 10.1116/6.0001319
• 发表时间: 2021
• 期刊: Journal of Vacuum Science and Technology A
• 影响因子: 2.9
• 作者: Basher Abdulrahman H.;Krstic Marjan;Fink Karin;Ito Tomoko;Karahashi Kazuhiro;Wenzel Wolfgang;Hamaguchi Satoshi
• 通讯作者: Hamaguchi Satoshi