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Properties of steps as key factors to control the interface during crystal growth ; its measurement and thermodynamic model

Properties of steps as key factors to control the interface during crystal growth ; its measurement and thermodynamic model
台阶特性是晶体生长过程中控制界面的关键因素;
批准号:
19H00820
负责人:
Yoshikawa Takeshi
金额:
$29.37万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2019
资助国家:
日本
项目状态:
已结题
起止时间:
2019-04-01 至 2023-03-31

项目摘要

项目成果

Yoshikawa Takeshi的其他基金

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SiC{0001}単結晶の溶融合金への溶解に及ぼす結晶内転位の影響
晶内位错对SiC{0001}单晶熔入合金熔体的影响
DOI: --
发表时间: 2022
期刊:
影响因子: --
作者: [川西咲子, 柴田浩幸, 吉川健]
通讯作者: 吉川健
In Situ Interferometry for ppm-Order Solubility Analysis at High Temperatures: A Case Study of Carbon Solubility in Molten Silicon
用于高温下 ppm 级溶解度分析的原位干涉测量:熔融硅中碳溶解度的案例研究
DOI: 10.1007/s11663-021-02216-4
发表时间: 2021
期刊: Metallurgical and Materials Transactions B
影响因子: --
作者: [Sakiko Kawanishi, Takeshi Yoshikawa, Didier Chaussende and Hiroyuki Shibata]
通讯作者: Didier Chaussende and Hiroyuki Shibata
Ultra-rapid lilquid phase epitaxy of SiC using nanoparticles
  • 批准号:
    20K20355
  • 项目类别:
    Grant-in-Aid for Challenging Research (Pioneering)
  • 资助金额:
    $16.31万
  • 财政年份:
    2018
  • 负责人:
    Yoshikawa Takeshi
  • 依托单位:
Clarification of step structure formation on the solution growth interface of SiC by direct interface observation and molecular dynamics simulation
  • 批准号:
    15H04166
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 资助金额:
    $10.4万
  • 财政年份:
    2015
  • 负责人:
    Yoshikawa Takeshi
  • 依托单位:
MR Hemodynamic Evaluations of Hepatic Vasculatures
  • 批准号:
    26461791
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $3.16万
  • 财政年份:
    2014
  • 负责人:
    Yoshikawa Takeshi
  • 依托单位:
Low temperature solution growth of high quality AlN single crystal using Cr-alloy solvent
  • 批准号:
    26630376
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
  • 资助金额:
    $2.41万
  • 财政年份:
    2014
  • 负责人:
    Yoshikawa Takeshi
  • 依托单位: