Locally Doped Nanorods: Introducing Distance-Dependence in Excitonic Nanostructures

局部掺杂纳米棒：在激子纳米结构中引入距离依赖性

• 批准号: 348534455
• 负责人: Professor Dr. Klaus Boldt
• 金额: --
• 依托单位: Abteilung Physikalische Chemie
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2017
• 资助国家: 德国
• 起止时间: 2016-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/348534455?language=en
• 关键词: Locally; Doped; Nanorods; Introducing; Distance

In this project we aim to synthesise semiconductor nanorods that contain transition metal dopants localised to a specific region along the rod. Semiconductor nanocrystals are attractive materials to be used for energy harvesting and conversion in e.g. solar cells, lasers, and photonics. Apart from the well-understood size quantisation effect, which allows to tune optical and electronic properties of nanocrystals by controlling their size and shape, doping with impurity ions is an increasingly important method to manufacture functional nanomaterials. Transition metals, especially paramagnetic ions, are suitable dopants, because they can be detected by their magnetic moment and size-independent fluorescence. Trapping of excited charge carriers on dopants occurs extremely fast, which so far has hampered observation of the charge transfer process in doped nanocrystals. We propose a 1D structure in which a doped region of the semiconductor material is separated from a second recombination centre for charge carriers (e.g. a heterojunction) by the length of the nanorod. This will allow us to spatially decouple the dopant-related processes from excitation and charge recombination and hence elucidate the fundamental carrier dynamics at very short times after photon absorption. This project will introduce distance as a new dimension of control over doping-related processes in semiconductor nanoparticles and help to design and fabricate doped nanoparticles with control over dopant distribution beyond the current state of the art. The results will be highly relevant for energy materials and photovoltaics, spintronics, and new fluorophores.

在这个项目中，我们的目标是合成含有过渡金属掺杂剂的半导体纳米棒，这些掺杂剂定位在沿着棒的特定区域，沿着棒。半导体纳米晶体是用于例如太阳能电池、激光器和光子学中的能量收集和转换的有吸引力的材料。除了众所周知的尺寸量子化效应，它允许通过控制纳米晶体的尺寸和形状来调节纳米晶体的光学和电子特性，掺杂杂质离子是制造功能纳米材料的一种越来越重要的方法。过渡金属，特别是顺磁性离子，是合适的掺杂剂，因为它们可以通过它们的磁矩和与尺寸无关的荧光来检测。掺杂剂上激发的电荷载流子的捕获发生得非常快，这到目前为止阻碍了掺杂纳米晶体中电荷转移过程的观察。我们提出了一种1D结构，其中半导体材料的掺杂区域与电荷载流子的第二复合中心（例如异质结）分开纳米棒的长度。这将使我们能够在空间上从激发和电荷复合中解耦掺杂剂相关的过程，从而在光子吸收后的很短时间内阐明基本的载流子动力学。该项目将引入距离作为控制半导体纳米颗粒中掺杂相关过程的新维度，并帮助设计和制造掺杂纳米颗粒，控制掺杂剂分布，超越当前最先进的技术水平。其结果将与能源材料和光电子学，自旋电子学和新的荧光团高度相关。

项目成果

Regioselective Growth Mechanism of Single Semiconductor Tips on CdS Nanorods

• DOI: 10.1021/acs.chemmater.0c03636
• 发表时间: 2020-12
• 期刊: Chemistry of Materials
• 影响因子: 8.6
• 作者: Florian Enders;Sebastian Sutter;Danja Fischli;Rebecca Köser;Samuel Monter;Simon Cardinal;K. Boldt

Kinetically Driven Cadmium Chalcogenide Nanorod Growth Fed by Local Cluster Aggregates

• DOI: 10.1021/acs.jpcc.0c02730
• 发表时间: 2020-06-11
• 期刊: JOURNAL OF PHYSICAL CHEMISTRY C
• 影响因子: 3.7
• 作者: Fischli, Danja;Enders, Florian;Boldt, Klaus
• 通讯作者: Boldt, Klaus