Structure-property relations for manganite memristive devices

锰氧化物忆阻器件的结构-性能关系

基本信息

项目摘要

Manganite heterostructures show very promising resistive switching characteristics and multilevel resistance states. This makes them ideal candidates for alternative non-volatile memories, but also as building blocks for neuromorphic computation. In contrast to the more common filamentary switching, manganite devices have been shown to switch homogeneously over the whole device area and might therefore be superior with respect to their cell-to-cell and cycle-to-cycle variation. Moreover, electronic and ionic transport in these materials can be tuned by varying the composition and microstructure, which could directly affect the switching performance. Although it is clear that ion transport plays a key role in the switching mechanism, many open questions are still to be understood. In particular, grain boundaries (present in CMOS-compatible polycrystalline manganite devices) significantly influence ionic transport in these materials, but their impact on resistive switching has not been directly studied yet. In order to gain an integral view of the different aspects influencing the switching properties of polycrystalline manganite thin film devices, we will utilise the complementary expertise of 3 internationally leading groups on ionic transport in manganites (Grenoble, Aachen) and resistive switching devices (Jülich). We will fabricate epitaxial thin film model systems with different chemical compositions and well-defined grain boundaries, through the use of bicrystal substrates. The impact of the grain boundaries on the ion transport and the switching properties of the films will be comprehensively studied. The chemical composition and the structure of films and devices will be investigated by the large variety of techniques available within the consortium or at different European synchrotron facilities (e.g. SOLEIL, ESRF and BESSY). These include surface analysis techniques, such as scanning probe techniques and photoelectron spectroscopy, as well as bulk sensitive techniques, such as Raman spectroscopy or X-ray absorption spectroscopy. Performing operando spectroscopy of switching devices will enable us to gain insights into the chemical and structural changes taking place during device operation. Oxygen diffusion and surface exchange in different thin-film configurations will be investigated by 18O tracer diffusion experiments in combination with time-of-flight secondary ion mass spectrometry or Raman spectroscopy. These experimental studies will be complemented by molecular static and molecular dynamics simulations of oxygen diffusion in bulk and grain-boundary simulation cells. This will enable us to uncover the complex interplay between microstructure, chemical composition, ionic and electronic transport and the switching performance of manganite memristive devices. Based on this, we will develop new routes for the fabrication of CMOS-compatible manganite micro-devices with high reliability and improved switching kinetics.
锰氧化物异质结构显示出非常有前途的阻变特性和多级电阻态。这使它们成为替代非易失性存储器的理想候选者,也是神经形态计算的构建块。与更常见的辅助切换相比,已显示出亚锰酸盐器件在整个器件区域上均匀地切换,因此在其电池间和周期间变化方面可能是上级的。此外,这些材料中的电子和离子传输可以通过改变组成和微观结构来调节,这可能直接影响开关性能。虽然很明显,离子传输在开关机制中起着关键作用,但仍有许多悬而未决的问题有待理解。特别是,晶界(存在于CMOS兼容的多晶锰氧化物器件)显着影响这些材料中的离子传输,但它们对电阻开关的影响尚未直接研究。为了获得影响多晶锰氧化物薄膜器件开关特性的不同方面的整体观点,我们将利用三个国际领先的锰氧化物离子传输(格勒诺布尔,亚琛)和电阻开关器件(Jülich)小组的互补专业知识。 我们将借由使用双晶基板来制造具有不同化学组成与明确晶粒边界的磊晶薄膜模型系统。 晶界对离子输运和薄膜开关性能的影响将得到全面的研究。薄膜和器件的化学成分和结构将通过联盟内或不同欧洲同步加速器设施(例如SOLEIL,ESRF和BESSY)的各种技术进行研究。这些包括表面分析技术,如扫描探针技术和光电子能谱,以及体敏技术,如拉曼光谱或X射线吸收光谱。执行开关器件的操作光谱将使我们能够深入了解器件操作过程中发生的化学和结构变化。氧扩散和表面交换在不同的薄膜配置将研究18 O示踪剂扩散实验结合飞行时间二次离子质谱或拉曼光谱。这些实验研究将得到补充的氧扩散在散装和晶界模拟细胞的分子静态和分子动力学模拟。这将使我们能够揭示锰氧化物忆阻器件的微观结构、化学成分、离子和电子输运以及开关性能之间的复杂相互作用。在此基础上,我们将开发新的路线,为制造的CMOS兼容的锰氧化物微器件具有高可靠性和改善开关动力学。

项目成果

期刊论文数量(2)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
The surprisingly high activation barrier for oxygen-vacancy migration in oxygen-excess manganite perovskites.
  • DOI:
    10.1039/d0cp01281e
  • 发表时间:
    2020-06
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Jacqueline M. Börgers;R. D. De Souza
  • 通讯作者:
    Jacqueline M. Börgers;R. D. De Souza
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Professor Roger De Souza, Ph.D.其他文献

Professor Roger De Souza, Ph.D.的其他文献

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{{ truncateString('Professor Roger De Souza, Ph.D.', 18)}}的其他基金

Correlation between surface potentials and surface oxygen exchange coefficents of CeO2
CeO2表面电位与表面氧交换系数的相关性
  • 批准号:
    267908922
  • 财政年份:
    2015
  • 资助金额:
    --
  • 项目类别:
    Research Grants
Diffusion-controlled processes in polycrystalline ceria:Combined effect of electrical field and mechanical loading
多晶二氧化铈中的扩散控制过程:电场和机械载荷的综合效应
  • 批准号:
    319339707
  • 财政年份:
  • 资助金额:
    --
  • 项目类别:
    Priority Programmes
Impact of electric fields on microstructure evolution in functional ceramics
电场对功能陶瓷微观结构演变的影响
  • 批准号:
    436250027
  • 财政年份:
  • 资助金额:
    --
  • 项目类别:
    Priority Programmes
Switching kinetics of memristive devices employing topotactic brownmillerite-perovskite phase transitions (MEMTOP)
采用拓扑棕针矿-钙钛矿相变的忆阻器件的开关动力学 (MEMTOP)
  • 批准号:
    505655178
  • 财政年份:
  • 资助金额:
    --
  • 项目类别:
    Research Grants
Finite-temperature, ab initio simulations of ion transport in lead–iodide perovskites
碘化铅钙钛矿中离子输运的有限温度从头算模拟
  • 批准号:
    529594215
  • 财政年份:
  • 资助金额:
    --
  • 项目类别:
    Research Grants
Proton conductivity near room temperature in hydrated pyrochlore-derived materials
水合烧绿石衍生材料在室温附近的质子电导率
  • 批准号:
    523164409
  • 财政年份:
  • 资助金额:
    --
  • 项目类别:
    Research Grants

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