High-Efficiency and Low-Cost Solar Cells of a New Type, Having Semiconductors Modified with Ultrafine Metal Particles

超细金属颗粒改性半导体的新型高效低成本太阳能电池

• 批准号: 05453191
• 负责人: NAKATO Yoshihiro
• 金额: $ 4.67万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05453191/
• 关键词: Silicon; Langmuir-Blogdett layr; Porous silicon; Transparent conductive oxide; Photoelectrochemistry; Hole diffusion length; Minority carrier diode; 結晶欠陥; 再結合準位; 光起電力; フタロシアニン; 太陽電池; 半導体; 金属超微粒子; 接合界面構造

Photoelectrochemical and solid-state solar cells of a new type, prepared by use of n-Si wafers modified with ultrafine metal particles, have been studied with an aim to improving the characteristics. A Langmuir-Blodgett layr of ultrafine platinum (Pt) particles on a water surface was transferred onto an n-Si wafer and, by this method, the mutual separation of the Pt particles on n-Si was controlled on a nanometer scale, From quantitative experimental studies on the dependences of the open-circuit photovoltage (V_<OC>) on the Pt-particle density and the cell temperature as well as that on the hole diffusion length of n-Si modified with the Pt particles, we have revealed that the n-Si modified with the Pt particles at a small density acts as an ideal minority-carrier diode at room temperature and generates a very high V_<OC>. We also attempted to use porous n-Si as a method to deposit ultrafine Pt islands and succeeded in obtaining a fairly high V_<OC> of 0.59V.Furthermore, we mede detailed studies on the solid-state solar cells prepared by the vacuum deposition of an indium-tin-oxide (ITO) layr on the Pt-particle modified n-Si, and have clarified that the direct deposition of an ITO layr on the Pt-modified n-Si causes many defects (surface recombination centers) near the Si surface, leading to small V_<OC>'s, but the pre-deposition of a thin copper-phthalocyanine layr before the ITO deposition suppresses the formation of such defects, incresing V_<OC> to 0.58V.We also studied "ITO/Si-oxide/Si" solar cells to clarify the structure and properties of the thin films and interfaces.

为了改善电池的性能，研究了用超细金属颗粒修饰的n-Si晶片制备的新型光电化学和固态太阳电池。通过对开路光电压(V&lt；OC&Gt；)关系的定量实验研究，将水表面的一层超细铂(Pt)颗粒转移到n-Si晶片上，通过这种方法，在纳米尺度上控制了n-Si上铂颗粒的相互分离。)对铂粒子密度、晶胞温度和空穴扩散长度的影响，揭示了小密度铂粒子修饰的n-Si在室温下是一种理想的少数载流子二极管，并产生了很高的V&lt；OC&gt；我们还尝试了用多孔n-Si作为沉积超细铂岛的方法，并成功地获得了0.59V的较高的V_t；oC&gt；此外，我们还对真空沉积ITO层制备的固态太阳电池进行了详细的研究，阐明了在铂修饰的n-Si上直接沉积ITO层会在硅表面附近引起许多缺陷(表面复合中心)，导致V_&lt；OC&GT；但是，在ITO沉积之前预沉积一层薄的铜酞菁层可以抑制这种缺陷的形成，使V&lt；OC&gt；提高到0.58V。我们还研究了“ITO/Si-氧化物/Si”太阳电池，以阐明薄膜和界面的结构和性质。

项目成果

T.Ishida: "Structures and Properties of Electron-beam-evaporated Indium Tin Oxide Films as Studied by x-ray Photoelectron Spectroscopy and Work-function Measurements." J.Appl.Phys.73. 4344-4350 (1993)

T.Ishida：“通过 X 射线光电子能谱和功函数测量研究电子束蒸发氧化铟锡薄膜的结构和性能。”

H.Kobayashi: "Improvement of n-Si Photoelectrochemical Cells by the Use of Aceton+Methanol Mixtures as Electrolyte Solvents." J.Electroanal.Chem.371. 53-58 (1994)

H.Kobayashi：“使用丙酮甲醇混合物作为电解质溶剂改进 n-Si 光电化学电池。”

H.Kobayashi: "Increases in Photovoltage of "Indium Tin Oxide/Silicon Oxide/Mat-textured n-Silicon" Junction Solar Cells by Silicon Preoxidation and Annealing Processes." J.Appl.Phys.74(7). 4756-4761 (1993)

H.Kobayashi：“通过硅预氧化和退火工艺提高“氧化铟锡/氧化硅/无光泽纹理 n-硅”结太阳能电池的光电压。”

H.Kobayashi: "Structures and Properties of Electron-beam-evaporated Indium Tin Oxide Films as Studied by X-ray Photoelectron Spectroscopy and Work-function Measurements." J.Appl.Phys.73(9). 4344-4350 (1993)

H.Kobayashi：“通过 X 射线光电子能谱和功函数测量研究电子束蒸发氧化铟锡薄膜的结构和性能。”

H.Kobayashi: "Dependence of Photovoltage of Spray-deposited Indium Tin Oxide/Sillicon Oxide/Sillicon Junction Solar Cells on Spray Solvents." J.Electrochem.Soc.141(5). 1357-1361 (1994)

H.Kobayashi：“喷涂沉积氧化铟锡/氧化硅/硅结太阳能电池的光电压对喷涂溶剂的依赖性。”