Development of time gating devices using electric field induced metal insulator transition

在氧气/氩气混合气体中，用反应溅射法制备了氧化钒薄膜。通过改变溅射气体中氧的含量、溅射功率和衬底温度来研究它们对氧化膜的电子/结构性质的影响。 氧化物膜的厚度设定为约40 nm。 用X射线衍射（XRD）、原子力显微镜（AFM）和输运测量等方法对薄膜进行了表征，结果表明，溅射金属（V）靶制备的氧化物薄膜的XRD峰与VO 2（011）峰相对应。 然而，薄膜特性的再现性是一个很大的问题，这可能与金属靶的氧化有关。溅射氧化物靶（V2 O 5）导致更好的可靠性。 当衬底温度设定在600 ℃附近时，发现对应于VO 2（011）峰的XRD峰。 这些薄膜表现出金属-绝缘体转变，但具有较低的膜质量特性。

Vanadium oxide films were made by reactively sputtering Vanadium metal targets or Vanadium oxide targets in oxygen/Ar gas mixture. The amount of oxygen in the sputtering gas, sputtering power and substrate temperature were varied to study their influence on electronic/structural properties of the oxide film. The thickness of the oxide film was set to ~40 nm. Films were characterized using X-ray diffraction (XRD), Atomic force microscopy (AFM) and transport measurements.The oxide film made by sputtering the metal (V) target showed XRD peaks corresponding to the VO2 (011) peak. However, the reproducibility of the film characteristics was a large problem, which is likely to do with oxidation of the metal target.Sputtering the oxide target (V2O5) resulted in better reliability. XRD peaks corresponding to the VO2 (011) peaks were found when the substrate temperature was set near 600 C. These films showed metal-insulator transition but with a lower film quality characteristic.