Development of time gating devices using electric field induced metal insulator transition

利用电场感应金属绝缘体转变的时间选通装置的开发

• 批准号: 24651173
• 负责人: HAYASHI Masamitsu
• 金额: $ 2.58万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-24651173/
• 关键词: ナノ電子デバイス; 金属半導体相転移; 機能性酸化物; 相転移

Vanadium oxide films were made by reactively sputtering Vanadium metal targets or Vanadium oxide targets in oxygen/Ar gas mixture. The amount of oxygen in the sputtering gas, sputtering power and substrate temperature were varied to study their influence on electronic/structural properties of the oxide film. The thickness of the oxide film was set to ~40 nm. Films were characterized using X-ray diffraction (XRD), Atomic force microscopy (AFM) and transport measurements.The oxide film made by sputtering the metal (V) target showed XRD peaks corresponding to the VO2 (011) peak. However, the reproducibility of the film characteristics was a large problem, which is likely to do with oxidation of the metal target.Sputtering the oxide target (V2O5) resulted in better reliability. XRD peaks corresponding to the VO2 (011) peaks were found when the substrate temperature was set near 600 C. These films showed metal-insulator transition but with a lower film quality characteristic.

在氧/氩混合气中反应溅射金属钒靶或氧化钒靶制备氧化钒薄膜。研究了溅射气体中氧含量、溅射功率和衬底温度对氧化膜电子结构性能的影响。氧化膜厚度设定为~40 nm。利用x射线衍射（XRD）、原子力显微镜（AFM）和输运测量对薄膜进行了表征。溅射金属(V)靶制成的氧化膜，其XRD峰与VO2（011）峰相对应。然而，薄膜特性的再现性是一个很大的问题，这可能与金属靶的氧化有关。溅射氧化靶（V2O5）提高了可靠性。当衬底温度设置在600℃附近时，发现了与VO2（011）峰对应的XRD峰，这些薄膜表现出金属-绝缘体转变，但薄膜质量特性较差。