Development of time gating devices using electric field induced metal insulator transition

利用电场感应金属绝缘体转变的时间选通装置的开发

• 批准号: 24651173
• 负责人: HAYASHI Masamitsu
• 金额: $ 2.58万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-24651173/
• 关键词: ナノ電子デバイス; 金属半導体相転移; 機能性酸化物; 相転移

Vanadium oxide films were made by reactively sputtering Vanadium metal targets or Vanadium oxide targets in oxygen/Ar gas mixture. The amount of oxygen in the sputtering gas, sputtering power and substrate temperature were varied to study their influence on electronic/structural properties of the oxide film. The thickness of the oxide film was set to ~40 nm. Films were characterized using X-ray diffraction (XRD), Atomic force microscopy (AFM) and transport measurements.The oxide film made by sputtering the metal (V) target showed XRD peaks corresponding to the VO2 (011) peak. However, the reproducibility of the film characteristics was a large problem, which is likely to do with oxidation of the metal target.Sputtering the oxide target (V2O5) resulted in better reliability. XRD peaks corresponding to the VO2 (011) peaks were found when the substrate temperature was set near 600 C. These films showed metal-insulator transition but with a lower film quality characteristic.

氧化钒膜是通过在氧气/AR气体混合物中反应溅射钒金属靶标或氧化钒靶标制成的。溅射气体，溅射功率和底物温度中的氧气量变化以研究它们对氧化膜的电子/结构特性的影响。 氧化膜的厚度设置为〜40 nm。 使用X射线衍射（XRD），原子力显微镜（AFM）和转运测量表征膜。通过溅射金属（V）靶标制造的氧化物膜显示出与Vo2（011）峰相对应的XRD峰。 但是，膜特征的可重复性是一个很大的问题，这很可能与金属靶标的氧化有关。进行氧化物靶标（V2O5）导致了更好的可靠性。 当将底物温度设置在600 C接近时，发现与Vo2（011）峰相对应的XRD峰。这些膜显示出金属绝缘体的跃迁，但具有较低的膜质量特征。