Temperature independent SiC photodetector operating up to 500 degreeC

电厂和化工厂的监控系统需要工作温度高达500 ℃的紫外光探测器。这种光电探测器也有望用于汽车或航空航天领域的发动机燃烧监测。硅（Si）主要用于当今电子产品，由于其1.12 eV的小能带隙，不能在200 ℃以上工作。宽带隙半导体碳化硅（4 H-SiC）是这种光电探测器的有希望的候选者。在这项研究中，我们研究了器件设计所需的SiC的光学特性。对于降低光电探测器灵敏度的漏电流，我们也找到了有效的抑制方法。基于这些结果，我们成功地演示了SiC光电探测器在500 ℃下的操作。

Ultra-violet photo detectors which can be operated up to 500 degreeC are needed for monitoring system of power plant and chemical plant. Such photo detectors are also expected to be used in engine combustion monitoring for automotive or aerospace field. Silicon (Si) which is mainly used in nowadays electronics cannot be operated at over 200 degreeC due to its small energy bandgap of 1.12 eV. Wide-bandgap semiconductor, silicon carbide (4H-SiC) is promising candidate for such photo detectors. In this study, we investigated optical properties of SiC, which are required for device design. We also found effective suppression method of leakage current which degrades sensitivity of photo detector. Based on these results, we successfully demonstrated operation of SiC photo detectors at 500 degree C.