Synthesis of few layered transition metal dichalcogenides by ion implantation

离子注入合成少层状过渡金属二硫属化物

• 批准号: 397370329
• 负责人: Dr. Axel Knop-Gericke
• 金额: --
• 依托单位: Unité Mixte de Physique CNRS/Thales
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2018
• 资助国家: 德国
• 起止时间: 2017-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/397370329?language=en
• 关键词: Synthesis; few; layered; transition; metal

The general objective of the project is to develop a large-scale technique for the uniform synthesis of Transition metal dichalcogenides (TMDCs) with a controlled number of unit layers (say from 1 to 5), using ion implantation, followed by an appropriate annealing at high temperature. Essentially 2 approaches will be studied, namely i. the implantation of the chalcogen ion into epitaxial thin films of the transition metals and ii. the coimplantation of both the chalcogen and metal ions into a neutral substrate, preferably monocrystalline (e.g. apphire, MgO), both followed by an annealing sequence in the 650-850 C range. Two representative semiconductor TMDCs have been chosen for the project: MoS2 and WS2. Our preliminary experiments, using 10 nm-thick, small grain polycrystalline Mo films deposited on oxidized Si substrates and ion implanted with 2.5 x 10e15 sulfur atoms per cm2 have demonstrated the formation of MoS2 when the post-implantation annealing was performed in a sealed quartz ampoule at 750 C during 1 hour. However, even though the Raman signal was found uniform over the 1 cm2 sample area , the crystalline orientation of the MoS2 layers was random, so that monocrystalline metal films and substrates will be needed during the project, in order to induce epitaxial growth of the TMDC layers upon annealing.The project is built around 5 workpackages (WPs). WP1 led by IKS (Institute forNuclear and Radiation Physics, Belgien) deals with substrate preparation (including transition metal epitaxial deposition by VSM (Laboratory of Solid State Physics and Magnetism, Belgien) and IKS) and ion implantation (IKS). WP2 led by FHI (Fritz-Haber-Institut, Berlin) is dedicated to the study of post-implantation annealing by in situ observations using x-ray photoelectron spectroscopy (XPS) at FHI as well as in situ high resolution transmission electron microscopy (HR-TEM) at CNRS (CNRS-Ecole polytechnique, France). WP3 led by CNRS is devoted to the ex situ physical characterizations of the synthesized TMDC materials, using Raman spectroscopy and photoluminescence at TRT (Thales Researchand Technology, France), XPS at FHI (with different photon energies to measure depth profiles), HR-TEM at CNRS, scanning tunnelling microscopy and spectroscopy (STM and STS) at VSM. Moreover, angle resolved photoelectron spectroscopy (ARPES) will be subcontracted to the ANTARES group of the SOLEIL synchrotron in France. WP4 led by TRT corresponds to the electronic (carrier mobility) and optoelectronic characterizations by TRT and CNRS of field-effect transistor structures fabricated by TRT. WP5 led by CNRS is dedicated to the project management, the exploitation of the results and the partnership with the Graphene Flagship (CNRS-TRT).

该项目的总体目标是开发一种大规模技术，使用离子注入，然后在高温下进行适当的退火，均匀合成具有受控数量的单元层（例如1至5层）的过渡金属二硫属化物（TMDC）。本质上将研究 2 种方法，即 i。将硫族离子注入到过渡金属的外延薄膜中，以及ii．将硫属元素和金属离子同时植入中性基材中，优选单晶基材（例如蓝宝石、MgO），然后在 650-850°C 范围内进行退火序列。该项目选择了两种具有代表性的半导体TMDC：MoS2 和WS2。我们的初步实验使用沉积在氧化硅衬底上的 10 nm 厚的小晶粒多晶 Mo 薄膜，并以每 cm2 2.5 x 10e15 硫原子离子注入，证明了当注入后退火在密封石英安瓿中 750°C 持续 1 小时时，形成了 MoS2。然而，尽管拉曼信号在 1 cm2 样品区域内是均匀的，但 MoS2 层的晶体取向是随机的，因此项目期间将需要单晶金属薄膜和基板，以便在退火时诱导 TMDC 层的外延生长。该项目围绕 5 个工作包 (WP) 构建。由IKS（比利时核与辐射物理研究所）领导的WP1负责衬底制备（包括VSM（比利时固态物理与磁学实验室）和IKS的过渡金属外延沉积）和离子注入（IKS）。由 FHI（弗里茨哈伯研究所，柏林）领导的 WP2 致力于通过使用 FHI 的 X 射线光电子能谱 (XPS) 以及法国国家科学研究中心 (CNRS-Ecole Polytechnique，法国) 的原位高分辨率透射电子显微镜 (HR-TEM) 进行原位观察来研究植入后退火。 CNRS 领导的 WP3 致力于合成 TMDC 材料的异位物理表征，使用 TRT（法国泰雷兹研究与技术公司）的拉曼光谱和光致发光、FHI 的 XPS（使用不同的光子能量测量深度剖面）、CNRS 的 HR-TEM、法国的扫描隧道显微镜和光谱（STM 和 STS） VSM。此外，角分辨光电子能谱（ARPES）将转包给法国SOLEIL同步加速器的ANTARES小组。 TRT主导的WP4对应于TRT和CNRS对TRT制造的场效应晶体管结构的电子（载流子迁移率）和光电表征。由 CNRS 领导的 WP5 致力于项目管理、成果开发以及与石墨烯旗舰项目 (CNRS-TRT) 的合作。