Nanopatterning of hybrid perovskites by thermal nanoimprint for perovskite lasers – (NIPLAS)
Nanopatterning of hybrid perovskites by thermal nanoimprint for perovskite lasers – (NIPLAS)
批准号:
398045707
负责人:
Professor Dr. Thomas Riedl
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2018
资助国家:
德国
项目状态:
已结题
起止时间:
2017-12-31 至 2020-12-31
中文摘要
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英文摘要
Hybrid halide perovskites have revolutionized thin-film photovoltaics as efficiencies have skyrocketed to levels >22% within a few years of research. With optoelectronic properties almost at par with the most successful inorganic semiconductors such as GaAs, hybrid halide perovskites also state an intriguing platform for light emitting diodes (LEDs) and lasers. For laser applications, there is the vision that perovskites may overcome/avoid the typical limitations and loss mechanisms imposed by organic gain media, such as triplet-singlet annihilation or absorption due to triplet excitons and polarons. As such, perovskites seed a new promise for the realization of an electrically operated diode laser that can be prepared from solution at low temperatures. Perovskite lasers even bear the potential to cover the spectral region between 530-610 nm, which is difficult to address at room temperature with established inorganic semiconductor gain media, e.g. GaInN or AlGaInP etc. While hybrid halide perovskites can be prepared by a number of facile, low-temperature techniques, their chemical sensitivity severely limits their patterning via established wet-chemical lithography techniques. As of yet, the tremendous potential of hybrid halide perovskites for optoelectronic and photonic applications has not been unlocked partially because of the lack of suitable versatile nanopatterning techniques, which are required to create resonator structures, waveguides etc. directly into perovskite layers with a maximum level of control and utmost precision. In NIPLAS we intend to use thermal nanoimprint (NIL) to directly pattern hybrid halide perovskite semiconductors. While we have conducted some promising preliminary work on NIL in MAPbI3, insights about the imprint mechanism and comparative studies of NIL in MAPbI3 and other representatives of this family of materials are lacking.As such, the project NIPLAS aims to unravel the fundamental mechanisms underlying thermal NIL in hybrid halide perovskites. Furthermore, we intend to exploit the exciting opportunities of patterning photonic structures by thermal NIL for perovskite based optoelectronic devices. We will focus our efforts on perovskite lasers, but it can be expected that the insights gained within this project will also be of general relevance for other perovskite based devices like LEDs, solar cells, photodetectors, etc.Taken together, the main objectives of the NIPLAS project are:1. To identify the fundamental mechanism of thermal imprint in hybrid halide perovskite semiconductors 2. To identify the limits of the imprint process depending on the thermo-mechanical properties of the perovskite 3. To study the effect of thermal imprint on the structural and optoelectronic properties of the perovskite4. To design and apply imprinted photonic nanostructures for low-threshold perovskite lasers
期刊论文(5)
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DOI:
10.1007/s00339-022-05521-0
发表时间:
2022
期刊:
Applied Physics A
影响因子:
--
作者:
[A. Mayer, T. Haeger, M. Runkel, J. Rond, J. Staabs, F. van gen Hassend, P. Görrn, T. Riedl, H.-C. Scheer]
通讯作者:
H.-C. Scheer
Ultra-smooth perovskite thin films for lasers (Conference Presentation)
用于激光器的超光滑钙钛矿薄膜(会议演示)
DOI:
10.1117/12.2319364
发表时间:
2018
期刊:
Physical Chemistry of Semiconductor Materials and Interfaces XVII
影响因子:
--
作者:
[N. Pourdavoud, A. Mayer, T. Haeger, R. Heiderhoff, I. Shutsko, H.-C. Scheer, P. Görrn, T. Riedl]
通讯作者:
T. Riedl
DOI:
10.1007/s00339-021-04366-3
发表时间:
2021-04-01
期刊:
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
影响因子:
2.7
作者:
[Mayer, Andre, Pourdavoud, Neda, Scheer, Hella-Christin]
通讯作者:
Scheer, Hella-Christin
DOI:
10.1007/s00339-021-04830-0
发表时间:
2021-08
期刊:
Applied Physics A
影响因子:
--
作者:
[A. Mayer;T. Haeger;M. Runkel;J. Rond;J. Staabs;F. van gen Hassend;A. Röttger;P. Görrn;T. Ried]
通讯作者:
A. Mayer;T. Haeger;M. Runkel;J. Rond;J. Staabs;F. van gen Hassend;A. Röttger;P. Görrn;T. Ried
High-speed flexible transistors and tunnel diodes and circuits based on them
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批准号:271805629
-
项目类别:Priority Programmes
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资助金额:$0.0万
-
财政年份:2015
-
负责人:Professor Dr. Thomas Riedl
-
依托单位:
国内基金
海外基金
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