High-speed flexible transistors and tunnel diodes and circuits based on them

该提案的目的是通过以下活动开发新型高速电子器件，用于集成到可扩展工艺中制成的柔性基板中，这些基板适合作为高速无线通信电路的组件：合成：合成部分专注于（高迁移率）半导体聚合物。将测试具有有利能级对准的几类材料。有前途的材料将在溶解度和加工条件方面进行优化，以应用于隧道二极管和TFT。TFT：对于一些有前途的材料，高速p沟道有机TFT器件（典型的）。1 µm），具有用于降低寄生电容的自对准光刻图案化D/S电极，并对其高频特性进行表征。互补，高速n沟道金属氧化物为基础的平面器件几何结构的TFT将被开发。为了克服平面器件布局的几何限制，将使用原子层沉积的特定益处来制备基于短沟道金属氧化物的垂直TFT，以用于制备电极、衬底和沟道材料。基于这一概念，我们期望将ft推进到> 2GHz的区域。 基于高速TFT的放大器电路的设计和实现是本论文的另一个主题。隧道二极管：本部分的主题是有机隧道二极管的制造和优化，以期在高速压控振荡器中实现。在选择合适的聚合物半导体的关键性能指标是高峰谷比，振荡> 1 GHz，在低V和最大化的输出current.Oscillator的NDR的开始：这部分是集中在一个灵活的有机隧道二极管在GHz范围内的基础上的压控振荡器的发展。各个构建模块将结合在一起，用于RF传输电路的设计和实现。

The aim of this proposal is the development of novel high-speed electronic devices for integration into flexible substrates made in scalable processes that are suitable as components of circuits for high-speed wireless communication through the following activities: Synthesis: The synthesis part is focused on (high mobility) semiconducting polymers. Several classes of materials with a favorable energy level alignment will be tested. Promising materials will be optimized in terms of solubility and processing conditions for application in tunnel diodes and TFTs.TFT: For a few promising materials high-speed p-channel organic TFT devices (typ. 1 µm) with self-aligned lithographically patterned D/S electrodes for lowered parasitic capacities will be prepared and characterized for their high-frequency characteristics. Complementary, high-speed n-channel metal-oxide based TFTs in planar device geometry will be developed. To overcome geometrical limitations of the planar device layout, short channel metal-oxide based vertical TFTs will be prepared using the specific benefits of atomic layer deposition for the preparation of electrodes, dielectrics and channel material. Based on this concept, we expect to push ft into the region > 2 GHz. Design and realization of amplifier circuits based on high-speed TFTs is another topic in this proposal.Tunnel diodes: Topic of this part is the fabrication and optimization of organic tunnel diodes with a view to implementation in high-speed voltage-controlled oscillators. Key performance targets in the selection of suitable polymeric semiconductors are high peak to valley ratio, oscillation > 1 GHz, onset of NDR at low V and maximized output current.Oscillator: This part is focused on the development of a voltage-controlled oscillator based on a flexible organic tunnel diode in the GHz range. The individual building blocks will be married for the design and realization of a RF transmission circuit.