Spintronic Devices Based on Topological Insulators

拓扑绝缘体的表面态是电流直接诱导自旋极化的，其方向与电流方向垂直锁定。这使得它成为一个很有前途的自旋电子应用平台。在过去的几年中，首席研究员在材料和器件发展方面为TI研究领域做出了一系列重要贡献。在这些成果的基础上，本项目专注于自旋电子器件的制造和表征，旨在测试/演示ti的自旋电子功能。具体而言，本项目主要实现以下两个目标：(1)实现自旋晶体管的操作，以展示基于我们提出的新机制的静电门控自旋的操作；（II）接近弹道自旋输运区，显著提高自旋产生效率。这些目标的实现将使我们能够在具体的基础上评估自旋电子学应用ti的潜力，为未来基于ti的技术提供基础。

The surface states of topological insulators (TIs) are peculiar in that electrical currents directly induce spin polarization whose direction is perpendicularly locked to the current direction. This makes TIs a promising platform for spintronic applications. In the past few years, the Principal Investigator has made a series of important contributions to the TI research field in terms of both materials and device developments. Building on those achievements, this project focuses on fabrication and characterization of spintronic devices aimed at testing/demonstrating spintronic functions of TIs. Specifically, the project addresses the following two objectives: (I) realize the spin transistor operation to demonstrate the manipulation of spins via electrostatic gating based on the new mechanism proposed by us; (II) approach the ballistic spin transport regime to significantly enhance the efficiency of spin generation. Achievements of these objectives will enable us to evaluate the potential of TIs for spintronic applications on a concrete basis, providing foundations for future technologies based on TIs.