Elucidating carrier transport mechanism in disordered amorphous oxide semiconductors to realize flexible fully solution processed oxide transistors

阐明无序非晶氧化物半导体中的载流子传输机制，以实现灵活的全溶液处理氧化物晶体管

• 批准号: 22K14291
• 负责人: Bermundo J.P.S
• 金额: $ 2.91万
• 依托单位: Nara Institute of Science and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Early-Career Scientists
• 财政年份: 2022
• 资助国家: 日本
• 起止时间: 2022-04-01 至 2024-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-22K14291/
• 关键词: oxide semiconductors; fully solution TFT; low temperature process; reliability; flexible devices; carrier concentration; solution process

We have successfully improved both performance and stability of fully solution processed oxide thin-film transistors by optimizing UV irradiation combined with low heating. Aside from optimizing oxygen vacancy (VO) amount, it is necessary to consider the metal oxide formation in both functionalized electrode and channel. Thus, we sought alternative methods instead of photonic process and found that Ar plasma irradiation also induces better stability. Aside from modulating VO to control carrier concentration, Ar plasma enhanced the semiconductor film density through reduction of voids/impurities which improved carrier transport. We also applied the concept of carrier concentration control on a solution processed ultrawide bandgap oxide insulator to transform it into a semiconductor film.

我们通过优化紫外线辐射与低加热相结合，成功地提高了完全溶液处理的氧化物薄膜晶体管的性能和稳定性。除了优化氧气空位（VO）数量外，还必须考虑在功能化电极和通道中的金属氧化物形成。因此，我们寻求替代方法，而不是光子过程，发现AR血浆辐照也可以诱导更好的稳定性。除了调节VO至控制载体浓度外，AR血浆还通过减少改善载流子传输的空隙/杂质来增强半导体膜密度。我们还将载体浓度控制的概念应用于溶液加工的超级带氧化物绝缘子，以将其转换为半导体膜。

项目成果

Influence of Sn Concentration on the Performance of Solution Combustion

Sn浓度对溶液燃烧性能的影响

• 发表时间: 2022
• 作者: Candell Grace Paredes Quino;Juan Paolo Bermundo;Mutsunori Uenuma;Yukiharu Uraoka
• 通讯作者: Yukiharu Uraoka

Impact of Precursor Aging and Relative Humidity on the Electric Performance of Solution Deposited Amorphous Gallium Oxide Thin Film Transistors

前驱体老化和相对湿度对溶液沉积非晶氧化镓薄膜晶体管电性能的影响

• 发表时间: 2022
• 作者: Diki Purnawati;Juan Paolo Bermundo;Yukiharu Uraoka
• 通讯作者: Yukiharu Uraoka

Fermi Level Prediction of Solution-processed Ultra-wide Bandgap a-Ga2Ox via Supervised Machine Learning Models

通过监督机器学习模型预测溶液处理的超宽带隙 a-Ga2Ox 的费米能​​级

• 发表时间: 2022
• 作者: Diki Purnawati;Paul Rossener Regonia;Juan Paolo Bermundo;Kazushi Ikeda;Yukiharu Uraoka
• 通讯作者: Yukiharu Uraoka

Machine-Learned Fermi Level Prediction of Solution-Processed Ultrawide-Bandgap Amorphous Gallium Oxide (a-Ga2Ox)

• DOI: 10.1021/acsaelm.2c01013
• 发表时间: 2022-11
• 期刊: ACS Applied Electronic Materials
• 影响因子: 4.7
• 作者: D. Purnawati;Paul Rossener Regonia;J. Bermundo;K. Ikeda;Y. Uraoka

Performance Enhancement of Solution-Processed Si-Sn-O Thin-Film Transistors Using Solution Combustion Synthesis

利用溶液燃烧合成提高溶液处理 Si-Sn-O 薄膜晶体管的性能

• 发表时间: 2022
• 作者: Candell Grace Paredes Quino;Juan Paolo Bermundo;Mutsunori Uenuma;Yukiharu Uraoka
• 通讯作者: Yukiharu Uraoka