Elucidating carrier transport mechanism in disordered amorphous oxide semiconductors to realize flexible fully solution processed oxide transistors

我们通过优化紫外光照射和低加热相结合的方法，成功地提高了全溶液处理氧化物薄膜晶体管的性能和稳定性。除了优化氧空位(VO)的数量外，还需要考虑功能化电极和沟道中金属氧化物的形成。因此，我们寻求替代光子过程的方法，并发现Ar等离子体辐照也能诱导更好的稳定性。除了调制VO来控制载流子浓度外，Ar等离子体还通过减少空穴/杂质来提高半导体薄膜的密度，从而改善了载流子的传输。我们还将载流子浓度控制的概念应用于溶液处理的超宽带隙氧化物绝缘体，将其转化为半导体薄膜。

We have successfully improved both performance and stability of fully solution processed oxide thin-film transistors by optimizing UV irradiation combined with low heating. Aside from optimizing oxygen vacancy (VO) amount, it is necessary to consider the metal oxide formation in both functionalized electrode and channel. Thus, we sought alternative methods instead of photonic process and found that Ar plasma irradiation also induces better stability. Aside from modulating VO to control carrier concentration, Ar plasma enhanced the semiconductor film density through reduction of voids/impurities which improved carrier transport. We also applied the concept of carrier concentration control on a solution processed ultrawide bandgap oxide insulator to transform it into a semiconductor film.