Elucidating carrier transport mechanism in disordered amorphous oxide semiconductors to realize flexible fully solution processed oxide transistors

通过优化紫外线照射和低加热，我们成功地提高了完全溶液处理的氧化物薄膜晶体管的性能和稳定性。除了优化氧空位（VO）量外，还需要考虑功能化电极和通道中金属氧化物的形成。因此，我们寻求替代光子过程的替代方法，并发现Ar等离子体照射也诱导更好的稳定性。除了调制VO以控制载流子浓度之外，Ar等离子体还通过减少空隙/杂质来提高半导体膜的密度，这改善了载流子输运。我们也将载子浓度控制的概念应用在溶液处理的超宽带隙氧化物绝缘体上，以将其转变成半导体薄膜。

We have successfully improved both performance and stability of fully solution processed oxide thin-film transistors by optimizing UV irradiation combined with low heating. Aside from optimizing oxygen vacancy (VO) amount, it is necessary to consider the metal oxide formation in both functionalized electrode and channel. Thus, we sought alternative methods instead of photonic process and found that Ar plasma irradiation also induces better stability. Aside from modulating VO to control carrier concentration, Ar plasma enhanced the semiconductor film density through reduction of voids/impurities which improved carrier transport. We also applied the concept of carrier concentration control on a solution processed ultrawide bandgap oxide insulator to transform it into a semiconductor film.