Elucidating carrier transport mechanism in disordered amorphous oxide semiconductors to realize flexible fully solution processed oxide transistors

阐明无序非晶氧化物半导体中的载流子传输机制，以实现灵活的全溶液处理氧化物晶体管

• 批准号: 22K14291
• 负责人: Bermundo J.P.S
• 金额: $ 2.91万
• 依托单位: Nara Institute of Science and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Early-Career Scientists
• 财政年份: 2022
• 资助国家: 日本
• 起止时间: 2022-04-01 至 2024-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-22K14291/
• 关键词: oxide semiconductors; fully solution TFT; low temperature process; reliability; flexible devices; carrier concentration; solution process

We have successfully improved both performance and stability of fully solution processed oxide thin-film transistors by optimizing UV irradiation combined with low heating. Aside from optimizing oxygen vacancy (VO) amount, it is necessary to consider the metal oxide formation in both functionalized electrode and channel. Thus, we sought alternative methods instead of photonic process and found that Ar plasma irradiation also induces better stability. Aside from modulating VO to control carrier concentration, Ar plasma enhanced the semiconductor film density through reduction of voids/impurities which improved carrier transport. We also applied the concept of carrier concentration control on a solution processed ultrawide bandgap oxide insulator to transform it into a semiconductor film.

通过优化紫外线照射和低加热，我们成功地提高了完全溶液处理的氧化物薄膜晶体管的性能和稳定性。除了优化氧空位（VO）量外，还需要考虑功能化电极和通道中金属氧化物的形成。因此，我们寻求替代光子过程的替代方法，并发现Ar等离子体照射也诱导更好的稳定性。除了调制VO以控制载流子浓度之外，Ar等离子体还通过减少空隙/杂质来提高半导体膜的密度，这改善了载流子输运。我们也将载子浓度控制的概念应用在溶液处理的超宽带隙氧化物绝缘体上，以将其转变成半导体薄膜。

项目成果

Influence of Sn Concentration on the Performance of Solution Combustion

Sn浓度对溶液燃烧性能的影响

• 发表时间: 2022
• 作者: Candell Grace Paredes Quino;Juan Paolo Bermundo;Mutsunori Uenuma;Yukiharu Uraoka
• 通讯作者: Yukiharu Uraoka

Impact of Precursor Aging and Relative Humidity on the Electric Performance of Solution Deposited Amorphous Gallium Oxide Thin Film Transistors

前驱体老化和相对湿度对溶液沉积非晶氧化镓薄膜晶体管电性能的影响

• 发表时间: 2022
• 作者: Diki Purnawati;Juan Paolo Bermundo;Yukiharu Uraoka
• 通讯作者: Yukiharu Uraoka

Fermi Level Prediction of Solution-processed Ultra-wide Bandgap a-Ga2Ox via Supervised Machine Learning Models

通过监督机器学习模型预测溶液处理的超宽带隙 a-Ga2Ox 的费米能​​级

• 发表时间: 2022
• 作者: Diki Purnawati;Paul Rossener Regonia;Juan Paolo Bermundo;Kazushi Ikeda;Yukiharu Uraoka
• 通讯作者: Yukiharu Uraoka

Machine-Learned Fermi Level Prediction of Solution-Processed Ultrawide-Bandgap Amorphous Gallium Oxide (a-Ga2Ox)

• DOI: 10.1021/acsaelm.2c01013
• 发表时间: 2022-11
• 期刊: ACS Applied Electronic Materials
• 影响因子: 4.7
• 作者: D. Purnawati;Paul Rossener Regonia;J. Bermundo;K. Ikeda;Y. Uraoka

High Performance Solution Processed Oxide Semiconductors and Hybrid Materials for Flexible Electronics

用于柔性电子产品的高性能解决方案加工氧化物半导体和混合材料

• 发表时间: 2022
• 作者: Juan Paolo Bermundo;Yukiharu Uraoka
• 通讯作者: Yukiharu Uraoka