Atomic structure elucidation and modulation for Al2O3/diamond interface

我们专注于Al 2 O3/金刚石界面，通过调节ALD工艺之前的预湿处理时间。我们发现，未经湿法退火处理的样品显示出大的Dit，在1012~1013 cm-2 eV-1的数量级。当进行湿退火处理时，Dit降低了一个数量级。随着退火处理次数的增加，Dit没有明显的变化。退火3 h的样品在相对深的能量位置显示出较低的Dit。

We focused on the Al2O3/diamond interface by modulating the pre-wet treatment times before the ALD process. We found that the sample without wet annealing treatment shows large Dit, in the order of 1012~1013 cm－2eV－1. Dit is reduced by one order of magnitude lower when wet annealing treatments were performed. Dit has no significant change with increasing wet annealing treatments. The sample with annealing for 3h shows lower Dit in the relatively deep energy position.