Exploring of Bulk and Structure Inversion Asymmetry in GaAs/AlGaAs Quantum Well Structures Applying Spin Photogalvanics

应用自旋光电池探索 GaAs/AlGaAs 量子阱结构中的体积和结构反转不对称性

• 批准号: 40956062
• 负责人: Professor Dr. Sergey Ganichev
• 金额: --
• 依托单位: Institut für Experimentelle und Angewandte Physik
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2007
• 资助国家: 德国
• 起止时间: 2006-12-31 至 2013-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/40956062?language=en
• 关键词: Exploring; Bulk; Structure; Inversion; Asymmetry

The project is aimed to the investigation of bulk (BIA) and structure (SIA) inversion asymmetry in semiconductor quantum well (QW) structures. Inversion asymmetry in QW structures and its manipulation play an important role for the generation, manipulation and detection of spin polarized electrons in semiconductor systems. To gain the information on BIA and SIA we will use a novel technique developed by our group in the framework of the first part of the project. The technique is based on investigation of terahertz radiation induced photogalvanic effects, comprising magneto-photogalvanic effect, circular photogalvanic effect and spin-galvanic effect. The project is focused on investigation of BIA and SIA in various Ill-V-compound materials of different crystallographic orientations. In particular, the behavior of the inversion asymmetry upon variation of temperature, QW shape and carrier density will be studied, Our preliminary results obtained on (llO)-oriented structures demonstrated that the structure inversion asymmetry can be controllably tuned to zero by variation of (-doping layer positions. This method should be extended to (00l)-grown structures providing an information on growth conditions needed to obtain perfectly symmetric structures with zero Rashba constant and structures with equal Rashba and Dresselhaus spin splittings. The latter structures should show extremely long spin relaxation times and are of particular interest for realization of spin transport based devices.

该项目旨在研究半导体量子阱（QW）结构中的体（BIA）和结构（SIA）反转不对称性。量子阱结构中的反转不对称及其操纵对半导体系统中自旋极化电子的产生、操纵和探测起着重要的作用。为了获得BIA和SIA的信息，我们将在项目第一部分的框架中使用我们小组开发的一种新技术。该技术是基于对太赫兹辐射引起的光电效应的研究，包括磁光电效应、圆形光电效应和自旋光电效应。本项目主要研究了BIA和SIA在不同晶体取向的ill - v复合材料中的作用。我们在（llO）取向结构上获得的初步结果表明，通过改变掺杂层的位置，可以将结构的反转不对称性可控地调谐到零。该方法应推广到（00l）生长结构，提供了获得零Rashba常数和等Rashba和Dresselhaus自旋分裂结构的完美对称结构所需的生长条件的信息。后一种结构应该显示出极长的自旋弛豫时间，并且对于实现基于自旋输运的器件特别感兴趣。