Microscopic theory of spin-splittings and ballistic spin currents in semiconductor nanostructures

本项目旨在定量预测有无磁场存在的纳米结构二维电子或空穴气体中自旋轨道相互作用引起的本征自旋霍尔效应、自旋轨道诱导的磁化强度、自旋进动时间、g因子和自旋极化电子流以及量子自旋霍尔效应。计算将基于一种新的自旋分辨量子输运理论，即我们最近发展的多次散射Buettiker探测器(MSB)模型。它将量子干涉和相干视为非相干散射，并允许人们以非微扰的方式合并不均匀的磁场。主要的方法目标将在于扩展这种方法，以一致地处理拓扑绝缘体所必需的许多电子能带。基本的电子结构方案是原子论相对论经验紧束缚方法。

This project aims at quantitatively predicting the spin-orbit-interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, spin precession times, g-factors, and spin-polarized electron currents as well as the quantum spin-Hall effect in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. The calculations will be based on a novel spin-resolved quantum transport theory, the multi scattering Buettiker probe (MSB) model, that we have recently developed. It treats quantum interference and coherence on the same footing as incoherent scattering and allows one to incorporate inhomogeneous magnetic fields in a non-perturbative manner. The main methodical objective will consist in extending this method to consistently treat many electronic bands as necessary for topological insulators. The underlying electronic structure scheme is the atomistic relativistic empirical tight-binding method.