Fabrication and characterization of integrated micro-thermoelectric coolers usingchemical and physical vapor deposition

使用化学和物理气相沉积的集成微型热电冷却器的制造和表征

• 批准号: 423406119
• 负责人: Dr. Heiko Reith, since 12/2020
• 金额: --
• 依托单位: Institut für Metallische Werkstoffe
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/423406119?language=en
• 关键词: Fabrication; characterization; integrated; micro; thermoelectric

Micro-thermoelectric coolers (µTECs) are intended to provide cooling locally at the electronic component where heat is produced or a punctual and precise control of the temperature is necessary. A promising potential application of µTECs is the local temperature control of optoelectronic components. Laser, especially for data transmission, require an extremely precise temperature control. If the laser cavity is exposed to temperature fluctuations, its geometrical dimensions vary due to thermal expansion, immediately reducing the efficiency of the data transmission. Today, typically the complete macroscopic assembly is actively cooled. An additional heater is placed close to the optoelectronic component for the required precise temperature stabilization. The total efficiency of the data transmission could be improved at reduced costs by the substitution of today’s technological solution by a temperature stabilization using integrated µTECs directly at the optoelectronic component. The state-of-the-art thermoelectric material in µTECs is produced by an electrochemical plating method since this is compatible with the requirements of a CMOS (complementary metal oxide semiconductor) back-end technology, but suffers from its poor thermoelectric conversion efficiency. However, the cooling power for the target-application can hereby not be realized due to the poor material’s quality, and thermoelectric material with a noticeably higher conversion efficiency would be requested. Therefore, there is a clear demand for technological solutions providing thermoelectric material with significantly increased conversion efficiency within a technology that is still fully compatible with CMOS back-end.The maximum allowed processing temperatures for the thermoelectric material is 200 °C, which is a challenge for the synthetic approach. While electrochemical plating methods are compatible with this temperature regime, the quality of the obtained material is not sufficient. There are two other deposition techniques that will be studied within this project: Chemical vapor deposition (CVD) and physical vapor deposition (PVD). For the CVD, the low substrate temperatures will be achieved by the use of thermolabile metalorganic precursors combined with special single-source-precursors that contain the building units of the material already at the molecular level. The same strategy will be applied for PVD, chosing processing temperatures such that a sufficient vapor pressure of the precursors is given.The principle feasibility of both approaches could be substantiated within preliminary work of the two applicants’ teams. But fundamental and systematic studies of the underlying mechanisms is now requested to allow for successful implementation of these two synthetic approaches into devices fabrication. This shall be realized by this project application.

微型热电冷却器（µtec）旨在在产生热量的电子元件处提供局部冷却，或者需要及时精确地控制温度。微tec的一个很有前途的潜在应用是光电元件的局部温度控制。激光，特别是数据传输，需要极其精确的温度控制。如果激光腔体暴露在温度波动中，由于热膨胀，其几何尺寸会发生变化，立即降低数据传输的效率。今天，通常整个宏观组装是主动冷却的。一个额外的加热器被放置在光电元件附近，以获得所需的精确温度稳定。数据传输的总效率可以通过直接在光电元件上使用集成微tec的温度稳定技术取代目前的技术解决方案，以降低成本来提高。µtec中最先进的热电材料是通过电化学电镀方法生产的，因为这与CMOS（互补金属氧化物半导体）后端技术的要求兼容，但其热电转换效率较差。但由于材料质量较差，无法实现目标应用的冷却功率，需要具有明显更高转换效率的热电材料。因此，对于提供热电材料的技术解决方案有明确的需求，该技术在与CMOS后端完全兼容的情况下，显著提高了转换效率。热电材料的最大允许加工温度为200°C，这对合成方法来说是一个挑战。虽然电化学镀方法与这种温度制度是相容的，但获得的材料的质量是不够的。本项目还将研究另外两种沉积技术：化学气相沉积（CVD）和物理气相沉积（PVD）。对于CVD，低衬底温度将通过使用耐热金属有机前驱体和特殊的单源前驱体来实现，这些前驱体已经在分子水平上包含了材料的构建单元。同样的策略将应用于PVD，选择加工温度，使前驱体有足够的蒸汽压。这两种方法的原则上可行性可以在两个申请人小组的初步工作中得到证实。但是，现在需要对潜在机制进行基础和系统的研究，以便成功地将这两种合成方法应用到器件制造中。这将通过本项目申请实现。