FIB-Nanolab with low temperature cathodoluminescence expansion

为了在纳米尺度上进行精确、微创的靶材制备，采用了一种配备低温阴极发光的聚焦离子束(FIB)系统(FIB-NanoLab)。除了通过场发射电子枪探测双束FIB的结构特性外，还利用阴极发光(CL)光谱对半导体样品的发射特性进行了选择。这使得能够在纳米尺度上对选定的物理属性(如光谱指纹)进行精确的准备；尤其是利用量子点、量子线、量子井或光学活性晶体缺陷的发光特性。FIB-NanoLab配置实现了三维CL层析成像，这是由于使用FIB去除了材料，并随后进行了具有详细深度剖面的连续系列原位CL分析。分析三元或四元半导体中电荷载流子的完整三维势场是可行的(例如，研究分离效应)和量子层堆栈。计划中的FIB-NanoLab的规范允许在纳米尺度上精确构建创新的功能半导体(纳米原型)。在这里，微腔或光子晶体的光子性质的改变是为了在成型过程中通过低温化学发光光谱进行控制和可能的校正，在FIB过程之前和过程中直接选择具有合适光谱性质的单个半导体量子结构是一种独特的可能性。它通过LHe CL对单个共振量子点的定向光谱选择和FIB对微棒谐振器的离子研磨来制造确定性的单光子发射体。此外，电子束/离子束诱导的纳米级金属沉积使量子光电子器件的电接触成为可能。甚至等离子体的性质也被认为是由FIB诱导的金属沉积在空间上调制的。同时，假设在液氦温度(LHe)下FIB处理的离子辐照损伤是减少的。因此，样品冷却的CL系统被用作选择过程和减少辐射损伤。FIB-NanoLab将成为全球独一无二的工具，并对马格德堡奥托-冯-盖里克大学作为半导体纳米光子学中心进行必要的升级。

For the precise and minimally invasive target preparation on nanometer scale, a focused ion beam (FIB) system equipped with low temperature cathodoluminescence (FIB-Nanolab) is applied. Beside probing structural properties via field emission electron gun of the dual beam FIB, regions intended for preparation are selected by the emission characteristics of semiconducting samples using cathodoluminescence (CL) spectroscopy. This enables a precise preparation regarding chosen physical properties (like spectral fingerprints) on nm scale; among others the use of the luminescence characteristics of quantum dots, quantum wires, quantum wells or optically active crystal defects. The FIB-nanolab configuration enables a three dimensional CL tomography due to the material removal using FIB and subsequent in-situ CL analysis in sequential series with detailed depth profiles. The analysis of the complete three dimensional potential landscape of the charge carriers in ternary or quaternary semiconductors (e.g. investigation of segregation effects) and in quantum layer stacks is feasible.The planned specifications of the FIB-nanolab allows the precise structuring of innovative functional semiconductors on nanometer scale (nanoprototyping). Here, the altered photonic properties of a microcavity or photonic crystal are intended to control and possibly corrected during the prototyping by low temperature CL spectroscopy.The direct selection of individual semiconductor quantum structures with suitable spectral properties before and during the FIB process is a unique possibility. It enables the fabrication of deterministic single photon emitters via targeted spectral selection of single resonant quantum dots by LHe CL and following ion milling of micro rod resonators via FIB. Beyond, electron/ion beam induced metal deposition on nm scale enables an electrical contacting of the quantum optoelectronic devices. Even plasmonic properties are assumed to modulate spatially by FIB-induced metal deposition.At the same time, a reduced ion irradiation damage is assumed for FIB processing at liquid Helium temperatures (LHe). Thus, the CL system with sample cooling is used as selection process as well as reduction of irradiation damage.The FIB-nanolab will be a worldwide unique tool and an essential upgrading for the Otto-von-Guericke-University Magdeburg as an center for semiconductor nanophotonics.