FIB-Nanolab with low temperature cathodoluminescence expansion

为了在纳米尺度上精确、微创地制备靶材，采用了一种配备低温阴极发光（FIB- nanolab）的聚焦离子束系统。除了利用双束FIB的场发射电子枪探测结构性质外，还利用阴极发光（CL）光谱根据半导体样品的发射特性选择拟制备的区域。这样就可以在纳米尺度上精确地制备选定的物理性质（如光谱指纹）；其中利用量子点、量子线、量子阱或光学活性晶体缺陷的发光特性。FIB-nanolab配置可以实现三维CL层析成像，因为使用FIB去除材料，然后进行详细深度剖面的连续系列原位CL分析。对三元或四元半导体中载流子的完整三维势场分析（例如对偏析效应的研究）和量子层堆栈是可行的。FIB-nanolab的计划规格允许在纳米尺度上精确构建创新功能半导体（纳米原型）。在这里，微腔或光子晶体的光子特性的改变是为了控制和可能纠正在原型制作过程中低温CL光谱。在FIB过程之前和过程中直接选择具有合适光谱特性的单个半导体量子结构是一种独特的可能性。它可以通过LHe CL对单个谐振量子点进行定向光谱选择，然后通过FIB对微棒谐振器进行离子铣削，从而制造出确定性的单光子发射器。此外，电子/离子束诱导的纳米级金属沉积使量子光电器件的电接触成为可能。甚至等离子体性质被假定为调制空间由光纤诱发金属沉积。同时，假设在液氦温度（LHe）下进行FIB处理时离子辐照损伤减小。因此，采用样品冷却的CL系统作为选择过程，并减少辐照损伤。FIB-nanolab将成为世界范围内独一无二的工具，也是马格德堡大学作为半导体纳米光子学中心的重要升级。

For the precise and minimally invasive target preparation on nanometer scale, a focused ion beam (FIB) system equipped with low temperature cathodoluminescence (FIB-Nanolab) is applied. Beside probing structural properties via field emission electron gun of the dual beam FIB, regions intended for preparation are selected by the emission characteristics of semiconducting samples using cathodoluminescence (CL) spectroscopy. This enables a precise preparation regarding chosen physical properties (like spectral fingerprints) on nm scale; among others the use of the luminescence characteristics of quantum dots, quantum wires, quantum wells or optically active crystal defects. The FIB-nanolab configuration enables a three dimensional CL tomography due to the material removal using FIB and subsequent in-situ CL analysis in sequential series with detailed depth profiles. The analysis of the complete three dimensional potential landscape of the charge carriers in ternary or quaternary semiconductors (e.g. investigation of segregation effects) and in quantum layer stacks is feasible.The planned specifications of the FIB-nanolab allows the precise structuring of innovative functional semiconductors on nanometer scale (nanoprototyping). Here, the altered photonic properties of a microcavity or photonic crystal are intended to control and possibly corrected during the prototyping by low temperature CL spectroscopy.The direct selection of individual semiconductor quantum structures with suitable spectral properties before and during the FIB process is a unique possibility. It enables the fabrication of deterministic single photon emitters via targeted spectral selection of single resonant quantum dots by LHe CL and following ion milling of micro rod resonators via FIB. Beyond, electron/ion beam induced metal deposition on nm scale enables an electrical contacting of the quantum optoelectronic devices. Even plasmonic properties are assumed to modulate spatially by FIB-induced metal deposition.At the same time, a reduced ion irradiation damage is assumed for FIB processing at liquid Helium temperatures (LHe). Thus, the CL system with sample cooling is used as selection process as well as reduction of irradiation damage.The FIB-nanolab will be a worldwide unique tool and an essential upgrading for the Otto-von-Guericke-University Magdeburg as an center for semiconductor nanophotonics.