FIB-Nanolab with low temperature cathodoluminescence expansion

具有低温阴极发光扩展功能的 FIB-Nanolab

• 批准号: 426081481
• 金额: --
• 依托单位: Otto-von-Guericke-Universität Magdeburg
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/426081481?language=en
• 关键词: FIB; Nanolab; low; temperature; cathodoluminescence

For the precise and minimally invasive target preparation on nanometer scale, a focused ion beam (FIB) system equipped with low temperature cathodoluminescence (FIB-Nanolab) is applied. Beside probing structural properties via field emission electron gun of the dual beam FIB, regions intended for preparation are selected by the emission characteristics of semiconducting samples using cathodoluminescence (CL) spectroscopy. This enables a precise preparation regarding chosen physical properties (like spectral fingerprints) on nm scale; among others the use of the luminescence characteristics of quantum dots, quantum wires, quantum wells or optically active crystal defects. The FIB-nanolab configuration enables a three dimensional CL tomography due to the material removal using FIB and subsequent in-situ CL analysis in sequential series with detailed depth profiles. The analysis of the complete three dimensional potential landscape of the charge carriers in ternary or quaternary semiconductors (e.g. investigation of segregation effects) and in quantum layer stacks is feasible.The planned specifications of the FIB-nanolab allows the precise structuring of innovative functional semiconductors on nanometer scale (nanoprototyping). Here, the altered photonic properties of a microcavity or photonic crystal are intended to control and possibly corrected during the prototyping by low temperature CL spectroscopy.The direct selection of individual semiconductor quantum structures with suitable spectral properties before and during the FIB process is a unique possibility. It enables the fabrication of deterministic single photon emitters via targeted spectral selection of single resonant quantum dots by LHe CL and following ion milling of micro rod resonators via FIB. Beyond, electron/ion beam induced metal deposition on nm scale enables an electrical contacting of the quantum optoelectronic devices. Even plasmonic properties are assumed to modulate spatially by FIB-induced metal deposition.At the same time, a reduced ion irradiation damage is assumed for FIB processing at liquid Helium temperatures (LHe). Thus, the CL system with sample cooling is used as selection process as well as reduction of irradiation damage.The FIB-nanolab will be a worldwide unique tool and an essential upgrading for the Otto-von-Guericke-University Magdeburg as an center for semiconductor nanophotonics.

为了在纳米尺度上进行精确和微创的靶制备，采用了配备低温阴极发光的聚焦离子束（FIB）系统（FIB Nanolab）。除了通过双束FIB的场发射电子枪探测结构特性外，还使用阴极发光（CL）光谱法根据半导体样品的发射特性来选择要制备的区域。这使得能够在nm尺度上精确制备所选的物理性质（如光谱指纹）;其中使用量子点、量子线、量子威尔斯或光学活性晶体缺陷的发光特性。FIB-纳米实验室配置使得能够进行三维CL断层扫描，这是由于使用FIB的材料去除和随后的具有详细深度分布的连续系列的原位CL分析。对三元或四元半导体（如偏析效应的研究）和量子层堆栈中电荷载流子的完整三维势场进行分析是可行的。FIB纳米实验室的计划规格允许在纳米尺度上精确构建创新的功能半导体（纳米原型）。在这里，微腔或光子晶体的改变的光子特性旨在通过低温CL光谱在原型制作期间进行控制和可能的校正。在FIB工艺之前和期间直接选择具有合适光谱特性的单个半导体量子结构是一种独特的可能性。它能够通过LHe CL对单共振量子点的有针对性的光谱选择以及随后通过FIB对微棒谐振器的离子铣削来制造确定性的单光子发射器。此外，电子/离子束诱导的纳米级金属沉积使得量子光电器件能够电接触。甚至等离子体激元特性被认为是通过FIB诱导的金属沉积进行空间调制的。同时，在液氦温度（LHe）下，FIB处理的离子辐照损伤被认为是减少的。因此，与样品冷却的CL系统被用作选择过程，以及减少辐照damage.The FIB纳米实验室将是一个世界性的独特的工具和奥托冯格里克大学马格德堡作为半导体纳米光子学中心的必要升级。