Failure mechanism and reliability of valence change memories (T01*)

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In the project statistical characterization of VCM cells under applicationonditions will be performed to identify the relevant failure phenomena. Simulation studies using the KMC, compact and continuum models developed in the last period complement the experimental work. The goal is to eluci-date the physical origin of the device failure by comparison of the simulation results and the experimental data. Eventually, strategies to minimize the failure rates will be developed. This work is done in collabora-tion with Infineon Technologies AG as industry Partner.