Multi-chamber electron beam evaporator system with targeted gas supply for the production of electrical contacts and thin functional layers

具有目标气体供应的多室电子束蒸发器系统，用于生产电接触和薄功能层

• 批准号: 427615366
• 金额: --
• 依托单位: Technische Universität Clausthal
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/427615366?language=en
• 关键词: Multi; chamber; electron; beam; evaporator

The fabrication of devices based on III-V semiconductor materials requires the electrical contacting of n- and p-doped regions. In order to avoid electrical losses and to allow the functioning of the components electrical contacts with ohmic characteristics are necessary. These consist of layer sequences of electrically active metals, adhesion promoters and very good electrical conductors. For n-doped arsenides, the sequence Ni / Au / Ge, for p-doped Ge / Pd, for n-doped nitrides, e.g. Ti / Al / {Pt, Ti, Ni, Mo} / Au, required for p-doped nitrides Ni / Au and for n-doped phosphides Ge / Au. The first material is used as a doping material and is protected by the following layers or increased by this the adhesion or electrical conductivity. So that the individual layers are not oxidized or contaminated and thus lose their properties, it is necessary that the layer sequence is deposited under UHV conditions. For this purpose, a UHV multi-chamber system with lock is necessary in which the individual materials are vaporized depending on their melting point and vapor pressure by means of electron beam arrangement. By expanding the plant to include other materials such as Cs, Ge and Si, as well as the possibility of targeted gas supply, the range of application of the plant can be greatly expanded and thus serve other purposes, such as. Production of negative electron affinity surfaces for photocathodes, thin oxide films for antireflection films, or thin epitaxial films based on thin Ge or Si.

基于III-V半导体材料的器件制造需要n-和p-掺杂区的电接触。为了避免电气损失并允许部件正常工作，需要具有欧姆特性的电接触。这些由电活性金属、附着力促进剂和非常好的导电体组成的层序。对于n掺杂的砷化物，序列Ni/Au/Ge，对于p掺杂的Ge/Pd，对于n掺杂的氮化物，例如，对于p掺杂的氮化物Ni/Au和对于n掺杂的磷化物Ge/Au，所需的序列Ni/Au/Ge。第一种材料用作掺杂材料，并由下面的层保护或由此增加附着力或导电性。为了使各个层不被氧化或污染，从而失去它们的性能，有必要在超高电压条件下沉积层序列。为此，需要一个带锁的特高压多室系统，在该系统中，单个材料通过电子束装置根据其熔点和蒸汽压进行汽化。通过将工厂扩大到包括Cs、Ge和Si等其他材料以及定向供气的可能性，该工厂的应用范围可以大大扩大，从而可以用于其他目的，例如。用于光电阴极的负电子亲和力表面的生产，用于减反射膜的薄氧化物薄膜，或基于薄Ge或Si的薄外延薄膜。