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Fundamental Research on Light Triggered Switching Element of Oxide Superconductor for Power Apparatus

电力设备用氧化物超导体光触发开关元件的基础研究

基本信息

批准号：
03452145
负责人：
SHIMIZU Noriyuki
金额：
$ 4.29万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1993
项目状态：
已结题

项目摘要

1. It is confirmed in oxide superconductor that light irradiation promotes the transition form superconducting state to normal state. Spectroscopic study revealed that uv component is more effective for S-N transition. Light absorption coefficient of specimen is almost constant through the examined range of wave length, therefore thermal mechanism is considered not to be involved.2. The deviation of voltage measured in V-I characteristics becomes significantly large under light irradiation. Light irradiation is considered to cause temperature rise of about 0.5 K from computer simulation. However temperature rise alone, which is realized by pressurizing of liquid nitrogen under dark condition, does not increase the deviation of voltage. It suggests that electronic mechanism is dominant.3. The increase in current causes the increase in voltage under light irradiation, but does not change time response for light pulse. The increase in light intensity causes the increase in voltage and hastens time response. Additionally it is clarified that voltage increase by light irradiation depends on the position of irradiation.4. YBCO thin film shows larger and quicker response than Bi bulk specimen. Response time of 10 mus delay was obtained for 50 mus wide light pulse.5. Voltage increase by light irradiation is not affected by magnetic field up to 500 gauss, unless voltage under dark condition is the same. However the deviation of voltage under light irradiation decreases with magnetic field.

1.证实了在氧化物超导体中，光辐照促进了超导态向正常态的转变。光谱研究表明，紫外组分对S-N跃迁的影响更大。在所检测的波长范围内，样品的光吸收系数几乎不变，因此认为不涉及热机制。在光照射下，V-I特性测量的电压偏差变得很大。由计算机模拟可知，光照射可引起约0.5K的温升。但是，在黑暗条件下通过液氮加压实现的单独温升并不会增加电压偏差。这说明电子机制占主导地位。电流的增加导致光照射下电压的增加，但不改变光脉冲的时间响应。光强的增加会导致电压的增加和时间响应的加快。此外，还阐明了光照射引起的电压升高与照射的位置有关。YBCO薄膜比Bi体样品具有更大、更快的响应速度。对于50微秒宽的光脉冲，获得了10微秒的延迟响应时间。500高斯以下的磁场不影响光照射引起的电压升高，除非暗条件下的电压相同。但是，光照射下的电压偏差随着磁场的增加而减小。