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Development of Electron Multiplication Device by Semiconductor Microfabrication Technologies

利用半导体微细加工技术开发电子倍增器件

基本信息

批准号：
03452177
负责人：
TAKAHASHI Khoro
金额：
$ 2.62万
依托单位：
Saitama University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

项目摘要

A new fabrication technology of silicon micro channel plate (MCP) by semiconductor microfabrication technologies has been developed instead of conventional MCP using glass micro capillaries. This fabrication method stands on two main technologies. One is silicon etching technique to shape the micro channels on the silicon wafers and another is chemical vapor deposition (CVD) technique to deposit electron multiplication films on the sufaces of the micro channels.The silicon etching is anisotropic chemical etching using (110) silicon and KOH solution. The best ething conditions to make micro channels with a high aspect ratio (channel length / channel width) of more than 20 were discovered. The dimension of the micro channels is 10mum width and 200 to 400mum length.Electron multiplication films are lead glass by CVD using tetra-ethyl lead and silicon tetraethoxide. The composition ratio of silicon and lead in the films changes acording to a ratio of the supplied gas sources. The resistance of the films changes extremely by the film composition, annealing and hydrogen deoxidation. An suitable resistance of the films for the MCP can be performed by controlling these conditions.The fabricated silicon MCP with the aspect ratio of 17 has the electron multiplication gain of 35 at the dynode voltage of 600V.

提出了一种利用半导体微加工技术制备硅微通道板（MCP）的新工艺，以取代传统的玻璃微通道板。这种制造方法基于两种主要技术。一种是在硅片上形成微通道的硅刻蚀技术，另一种是在微通道表面存款电子倍增膜的化学气相沉积（CVD）技术，硅刻蚀是利用（110）硅和KOH溶液的各向异性化学刻蚀。发现了制备高纵横比（通道长度/通道宽度）大于20的微通道的最佳条件。微通道的尺寸为10 μ m宽和200 - 400 μ m长。电子倍增膜是通过使用四乙基铅和四乙醇硅的CVD的铅玻璃。膜中硅和铅的组成比根据供应的气体源的比率而变化。薄膜的电阻随薄膜成分、退火和氢脱氧的变化而变化。通过控制这些工艺条件，可以得到合适的膜电阻，在600 V的倍增电压下，制作的硅微通道板的电子倍增增益为35，其纵横比为17。