Electric-Field-Gated PHB and Photo-Induced Charge-Separation Processes in Polymer-Dye Thin Films at low temperatures

近年来，人们研究了双色敏化的光子门控光化学空穴效应(PHB)和半导体基质中的电场门控PHB。对于前者，我们不仅在缩水甘油叠氮聚合物中观察到了四苯并吗啡锌的双色敏化光谱空穴，而且在含有酰氧亚胺基团的聚合物和聚乙烯Rho-叠氮苯甲醛的聚合物中也观察到了双色敏化光谱空穴。具有较高三重态能级的基质聚合物具有更好的栅控效率。为了获得一种新的利用半导体基质和电场的栅控系统，尝试用溶胶-凝胶法制备了分子掺杂的二氧化钛(TiO2)薄膜。当退火温度控制在100ﾟC以下时，可以得到透明的薄膜，但PHB空穴的形成效率很低，并且没有观察到外加电场的栅效应。仅在100ﾟC以下进行退火热处理的薄膜还不具备半导体特性。

In these years, the photon-gated photochemical hole buming (PHB) through two color sensitization and the electric-field-gated PHB in a semiconductor matrix were studied. As to the former topics, two-color-sensitized spectral holes of zinc tetratolyl tetrabenzoporphine (ZnTTBP) were observed not only in glycidyl azide polymers but also in the polymers containing acyloxyiminogroups and poly(vinyl-rho-azido benzal). The matrix polymers with higher triplet energy levels are supposed to provide better gating efficiencies.In order to obtain a new system of gating by using semiconductor matrix with the electric field, transparent titanium oxide (TiO_2) films with molecularly doped ZnTTBP were tried to prepare with a sol-gel method. The transparent films were obtained when the annealing was limited below 100ﾟC, but the efficiency of PHB hole formation was very low and the gating effect by the application of electric field was not observed for these films. The films with annealing only up to 100ﾟC are not yet supposed to have a semiconductor property.