Electric-Field-Gated PHB and Photo-Induced Charge-Separation Processes in Polymer-Dye Thin Films at low temperatures

近年来，人们对双色敏化的光选通光化学烧孔和半导体基质中的电场选通光化学烧孔进行了研究。对于前一个课题，不仅在缩水甘油叠氮聚合物中观察到了四甲苯基四苯并吗啡锌（ZnTTBP）的双色敏化光谱空穴，而且在含酰氧基亚氨基基团的聚合物和聚（乙烯基-对-叠氮基苯甲醛）中也观察到了ZnTTBP的双色敏化光谱空穴。为了获得一种利用半导体基体和电场的新型选通系统，采用溶胶-凝胶法制备了ZnTTBP分子掺杂的TiO_2透明薄膜。当退火温度控制在100 ℃以下时，可以得到透明的薄膜，但薄膜中的孔形成效率很低，没有观察到电场的门控效应。退火温度只有100摄氏度的薄膜还不应该具有半导体特性。

In these years, the photon-gated photochemical hole buming (PHB) through two color sensitization and the electric-field-gated PHB in a semiconductor matrix were studied. As to the former topics, two-color-sensitized spectral holes of zinc tetratolyl tetrabenzoporphine (ZnTTBP) were observed not only in glycidyl azide polymers but also in the polymers containing acyloxyiminogroups and poly(vinyl-rho-azido benzal). The matrix polymers with higher triplet energy levels are supposed to provide better gating efficiencies.In order to obtain a new system of gating by using semiconductor matrix with the electric field, transparent titanium oxide (TiO_2) films with molecularly doped ZnTTBP were tried to prepare with a sol-gel method. The transparent films were obtained when the annealing was limited below 100ﾟC, but the efficiency of PHB hole formation was very low and the gating effect by the application of electric field was not observed for these films. The films with annealing only up to 100ﾟC are not yet supposed to have a semiconductor property.