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Investigation of Nonlocal Conduction in Two Dimensional Electron System Controlled by Various Gate

各种栅极控制的二维电子系统非局域传导研究

基本信息

批准号：
05452041
负责人：
MURASE Kazuo
金额：
$ 4.48万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

项目摘要

We have investigated 2DES in semiconductor with various gate structures and obtained the following results.(1) Magnetocapacitance in the Quantum Hall RegimeWe have measured the temperature and frequency dependence of the magnetocapacitance minima between 2DES and the gate GaAs/AlGaAs in QHE regime. It is found that we can separate the capacitance which is prportional to the area of the edge state and that from the bulk state, which is a function of sigma_<xx>.(2) Nonlocal Resistance and Edges State in GaAs/AlGaAs and Si-MOSFETFrom the nonlocal magnetoresistance in QHE regime, it is determined that energy relaxation lengh of edge state in GaAs/AlGaAs and Si-MOSFET is several cm and several hundred of microns.Reflection from Extra Probes in Magnetic Electron Focusing EffectWe have found that the electron in apparently reflected from the extra probe in MEFE and the reflected electron comes from the remitted electron from the extra probe, whose potential increases due to the pile of electrons.(4) Angular Distribution of Electron from Oblique WireWe have determined the angular distribution of electron from the oblique wire by the ballistic electron transport at low magnetic fields. The emitted distribution is found to depend on the structure at the outlet rather than the wire direction.(5) Commensutate Oscillations in Artificial Antidot SuperlatticeWe have investigated the influence of current direction and the anisotropy of superlattice on the commensurate oscillations in antidot superlattice. It is found that the peak position of the oscillations is determined by the nearest neighbor distance except for the direction of nearest neighbor parallel to the current.(6) Electron Localization Effect in poly-Si TFTFrom the low temperature electrical measerement of poly-Si TFT,it is found that the TFT samples show various Anderson localization phenomena from the 2D weak localization to the variable range hopping due to the strong localization.

我们研究了具有各种栅结构的半导体中的2DES，得到了以下结果。(1)量子霍尔区的磁电容我们测量了量子霍尔区中2DES和GaAs/AlGaAs栅之间的磁电容极小值随温度和频率的变化。我们发现，我们可以分离出与边缘态面积成正比的电容和与体态面积成正比的电容<xx>。(2)GaAs/AlGaAs和Si-HBT的非局域电阻和边缘态从QHE区的非局域磁电阻，本文测定了GaAs/AlGaAs和Si-MOSFET的尺寸为几厘米，几百微米。磁电子聚焦中的额外探针反射我们发现，在MEFE中，电子明显地被额外探针反射，而反射电子来自于被重新注入的电子。电子从额外的探针，其电位增加，由于电子堆。(4)斜导线电子的角分布我们用低磁场下的电子弹道输运方法测定了斜导线电子的角分布。发射的分布被发现取决于在出口处的结构，而不是线的方向。(5)人工反点超晶格中的公度振荡我们研究了电流方向和超晶格的各向异性对反点超晶格中公度振荡的影响。研究发现，除了最近邻方向与电流方向平行外，振荡的峰值位置由最近邻距离决定。(6)多晶硅薄膜晶体管中的电子局域化效应通过对多晶硅薄膜晶体管的低温电学测试，发现薄膜晶体管样品中存在各种各样的安德森局域化现象，从二维的弱局域化到强局域化引起的变程跳变。