Investigation of Nonlocal Conduction in Two Dimensional Electron System Controlled by Various Gate
Investigation of Nonlocal Conduction in Two Dimensional Electron System Controlled by Various Gate
批准号:
05452041
负责人:
MURASE Kazuo
金额:
$4.48万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994
中文摘要
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英文摘要
We have investigated 2DES in semiconductor with various gate structures and obtained the following results.(1) Magnetocapacitance in the Quantum Hall RegimeWe have measured the temperature and frequency dependence of the magnetocapacitance minima between 2DES and the gate GaAs/AlGaAs in QHE regime. It is found that we can separate the capacitance which is prportional to the area of the edge state and that from the bulk state, which is a function of sigma_<xx>.(2) Nonlocal Resistance and Edges State in GaAs/AlGaAs and Si-MOSFETFrom the nonlocal magnetoresistance in QHE regime, it is determined that energy relaxation lengh of edge state in GaAs/AlGaAs and Si-MOSFET is several cm and several hundred of microns.Reflection from Extra Probes in Magnetic Electron Focusing EffectWe have found that the electron in apparently reflected from the extra probe in MEFE and the reflected electron comes from the remitted electron from the extra probe, whose potential increases due to the pile of electrons.(4) Angular Distribution of Electron from Oblique WireWe have determined the angular distribution of electron from the oblique wire by the ballistic electron transport at low magnetic fields. The emitted distribution is found to depend on the structure at the outlet rather than the wire direction.(5) Commensutate Oscillations in Artificial Antidot SuperlatticeWe have investigated the influence of current direction and the anisotropy of superlattice on the commensurate oscillations in antidot superlattice. It is found that the peak position of the oscillations is determined by the nearest neighbor distance except for the direction of nearest neighbor parallel to the current.(6) Electron Localization Effect in poly-Si TFTFrom the low temperature electrical measerement of poly-Si TFT,it is found that the TFT samples show various Anderson localization phenomena from the 2D weak localization to the variable range hopping due to the strong localization.
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S.TAKAOKA: "“Magnetocapacitance and the Edge State in a Two Dimensional Electron System in Quantum Hall Regime"" Physical Review Letters,. 72. 3080-3083 (1994)
S.TAKAOKA:“量子霍尔体系中二维电子系统中的磁电容和边缘态”,物理评论快报,72。3080-3083(1994)
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K.Oto: ""Superconductivility in PtSi Ultrathin Films"" Journal of Applied Physics. Vol.76. 5339-5342 (1994)
K.Oto:“PtSi 超薄膜中的超导性””应用物理学杂志。
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邑瀬和生: "量子の世界(物理研究のフロンティア)" 大阪大学出版会, 216(111-136) (1994)
大濑和夫:《量子世界(物理研究前沿)》大阪大学出版社,216(111-136)(1994)
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音賢一: "半導体メゾスコピック構造における量子伝導" 大阪大学極限物質研究センター報告書. 4. 26-34 (1994)
Kenichi Oto:“半导体介观结构中的量子传导”大阪大学极限材料研究中心报告,4. 26-34 (1994)。
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K.TSUKAGOSHI: "“Transport Properties in Artificial Lateral Superlattice"" Superlattices and Microstructures.(印刷中).
K.TSUKAGOSHI:““人工横向超晶格中的传输特性””超晶格和微结构。(出版中)。
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共 35 条
INVESTIGATION OF RIGIDITY PERCOLATION, MEDIUM-RANGE STRUCTURES AND FRACTON IN MULTI-COMPOUND GLASSY SEMICONDUCTORS
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批准号:09440117
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$8.19万
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财政年份:1997
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负责人:MURASE Kazuo
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依托单位:
Investigation of Quantum Conductance Fluctuation in Mesoscopic Structure of Degenerate Semiconductor
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批准号:63460031
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.35万
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财政年份:1988
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负责人:MURASE Kazuo
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依托单位: