Application of Time-Resolved Electron Spectroscopy to the Dynamics of Interfacial Excitation

时间分辨电子能谱在界面激发动力学研究中的应用

• 批准号: 05452100
• 负责人: OKANO Tatsuo
• 金额: $ 4.16万
• 依托单位: Institute of Industrial Science, University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05452100/
• 关键词: Surface; Low Energy Electron; Electron spectroscopy; Time-Resolved Spectroscopy; Electronic Excitation; Internal Conversion; 時間分解

(1) A time-resolved electron energy analyzer was developed. The analyzer consists of an electrostatic ellipsoidal mirror analyzer and a charged particle streak-camera and exhibits excellent performance compromising between wide acceptance angle and good time resolution. We have developed new fabrication process of non-spherical grid system and quadrupole electrostatic lens system. The time and energy resolution of the spectrometer is 20 ps and 10eV,respectively.(2) Measurement of time-resolved electron spectroscopy on solid surfaces was done in two ways. One is a measurement of internal conversion electron emission under nuclear resonant X-ray scattering. The experiment was made in an AR beamline of National Laboratory of High Energy Physics (KEK). The second one is a photoemission from solid surfaces by using VUV synchrotron radiation in the National Institute of Molecular Science.(3) A picosecond photo-electron source was developed. The activation process of NEA GaAs photocathode was extensively studied. The annealing condition of GaAs single crystal plane was determined by using a scanning tunneling microscopy. The dependence of activation gas pressure and temperatures on step bunching phenomena was clarified.

(1)研制了时间分辨电子能量分析仪。该分析器由静电椭球镜分析器和带电粒子条纹相机组成，具有良好的性能，兼顾宽接收角和良好的时间分辨率。我们开发了非球面栅极系统和四极静电透镜系统的新制作工艺。该谱仪的时间分辨率为20 ps，能量分辨率为10 eV。(2)固体表面时间分辨电子能谱的测量有两种方法。一个是在核共振X射线散射下测量内转换电子发射。实验是在高能物理国家实验室（KEK）的AR光束线上进行的。第二个是在国立分子科学研究所利用真空紫外同步辐射从固体表面的光电子。(3)研制了一种皮秒光电子源。对NEA GaAs光电阴极的激活过程进行了深入研究。用扫描隧道显微镜测定了GaAs单晶面的退火条件。阐明了激活气体压力和温度对台阶聚束现象的影响。

项目成果

K.Hata: "Evolution of step bunching on GaAs(001) formed by annealing in AsH3 and H2 ambient" Record of 13th Alloy Semiconductou Physics and Electronics Symposium. C8 (1994)

K.Hata：“AsH3 和 H2 环境中退火形成的 GaAs(001) 台阶聚束的演化”第 13 届合金半导体物理与电子学研讨会记录。

K.Hata: "Spontaneous appearance of high index facets during the evolution of step bunching on vicinal GaAs(001)" Journal of Applied Physics. 76. 5601-5604 (1994)

K.Hata：“邻位 GaAs(001) 阶跃聚束演化过程中高折射率面的自发出现”《应用物理学杂志》。

K.Hata, A.Kawazu, T.Okano, T.Ueda: "Observation of step bunching on vicinal GaAs(100)studied by scanning tunneling microscopy" Appl.Phys.Lett.63. 1625-1627 (1993)

K.Hata、A.Kawazu、T.Okano、T.Ueda：“通过扫描隧道显微镜研究邻位 GaAs(100) 的阶梯聚束观察”Appl.Phys.Lett.63。

BK.Hata, H.Ikoma, T.Okano, A.Kawazu, T.Ueda M.Akiyama: "Spontaneous appearance of high index facets during the evolution of step bunching on vicinal GaAs(001)" J.Appl.Phys.76. 5601-5604 (1994)

BK.Hata、H.Ikoma、T.Okano、A.Kawazu、T.Ueda M.Akiyama：“邻位 GaAs(001) 台阶聚束演化过程中高折射率面的自发出现”J.Appl.Phys.76

CK.Hata, H.Hirakawa, T.Okano, T.Ueda, A.Akiyama: "Evolution of step bunching on GaAs(001)formed by annealing in AsH3 and H2 ambient" Record of 13th Alloy Semiconductor Physics and Electronics Symposium. C-8. (1994)

CK.Hata、H.Hirakawa、T.Okano、T.Ueda、A.Akiyama：“AsH3 和 H2 环境中退火形成的 GaAs(001) 阶跃聚束的演化”第 13 届合金半导体物理与电子学研讨会记录。