Application of Time-Resolved Electron Spectroscopy to the Dynamics of Interfacial Excitation
Application of Time-Resolved Electron Spectroscopy to the Dynamics of Interfacial Excitation
批准号:
05452100
负责人:
OKANO Tatsuo
金额:
$4.16万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994
中文摘要
(1)研制了时间分辨电子能量分析仪。该分析器由静电椭球镜分析器和带电粒子条纹相机组成,在宽接收角度和良好的时间分辨率之间表现出优异的性能。我们开发了非球面网格系统和四极静电透镜系统的制造新工艺。该光谱仪的时间分辨率为20ps,能量分辨率为10 eV。(2)固体表面的时间分辨电子能谱测量采用了两种方法。一种是测量核共振X射线散射下的内转换电子发射。该实验是在高能物理国家实验室(KEK)的AR光束线上进行的。第二个是美国国立分子科学研究院利用真空紫外光同步辐射进行固体表面的光电子发射。(3)研制了皮秒光电子源。对NEA-GaAs光电阴极的激活过程进行了深入的研究。用扫描隧道显微镜确定了单晶面的退火条件。阐明了活化气体压力和温度与阶跃聚束现象的关系。
英文摘要
(1) A time-resolved electron energy analyzer was developed. The analyzer consists of an electrostatic ellipsoidal mirror analyzer and a charged particle streak-camera and exhibits excellent performance compromising between wide acceptance angle and good time resolution. We have developed new fabrication process of non-spherical grid system and quadrupole electrostatic lens system. The time and energy resolution of the spectrometer is 20 ps and 10eV,respectively.(2) Measurement of time-resolved electron spectroscopy on solid surfaces was done in two ways. One is a measurement of internal conversion electron emission under nuclear resonant X-ray scattering. The experiment was made in an AR beamline of National Laboratory of High Energy Physics (KEK). The second one is a photoemission from solid surfaces by using VUV synchrotron radiation in the National Institute of Molecular Science.(3) A picosecond photo-electron source was developed. The activation process of NEA GaAs photocathode was extensively studied. The annealing condition of GaAs single crystal plane was determined by using a scanning tunneling microscopy. The dependence of activation gas pressure and temperatures on step bunching phenomena was clarified.
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K.Hata: "Spontaneous appearance of high index facets during the evolution of step bunching on vicinal GaAs(001)" Journal of Applied Physics. 76. 5601-5604 (1994)
K.Hata:“邻位 GaAs(001) 阶跃聚束演化过程中高折射率面的自发出现”《应用物理学杂志》。
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通讯作者:
K.Hata: "Evolution of step bunching on GaAs(001) formed by annealing in AsH3 and H2 ambient" Record of 13th Alloy Semiconductou Physics and Electronics Symposium. C8 (1994)
K.Hata:“AsH3 和 H2 环境中退火形成的 GaAs(001) 台阶聚束的演化”第 13 届合金半导体物理与电子学研讨会记录。
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K.Hata, A.Kawazu, T.Okano, T.Ueda: "Observation of step bunching on vicinal GaAs(100)studied by scanning tunneling microscopy" Appl.Phys.Lett.63. 1625-1627 (1993)
K.Hata、A.Kawazu、T.Okano、T.Ueda:“通过扫描隧道显微镜研究邻位 GaAs(100) 的阶梯聚束观察”Appl.Phys.Lett.63。
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BK.Hata, H.Ikoma, T.Okano, A.Kawazu, T.Ueda M.Akiyama: "Spontaneous appearance of high index facets during the evolution of step bunching on vicinal GaAs(001)" J.Appl.Phys.76. 5601-5604 (1994)
BK.Hata、H.Ikoma、T.Okano、A.Kawazu、T.Ueda M.Akiyama:“邻位 GaAs(001) 台阶聚束演化过程中高折射率面的自发出现”J.Appl.Phys.76
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通讯作者:
CK.Hata, H.Hirakawa, T.Okano, T.Ueda, A.Akiyama: "Evolution of step bunching on GaAs(001)formed by annealing in AsH3 and H2 ambient" Record of 13th Alloy Semiconductor Physics and Electronics Symposium. C-8. (1994)
CK.Hata、H.Hirakawa、T.Okano、T.Ueda、A.Akiyama:“AsH3 和 H2 环境中退火形成的 GaAs(001) 阶跃聚束的演化”第 13 届合金半导体物理与电子学研讨会记录。
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共 9 条
Study on atomic diffusion process promoted by hydrogen absorption measured by time domain analysis of nuclear resonant X-ray scattering
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批准号:21360019
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.9万
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财政年份:2009
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负责人:OKANO Tatsuo
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依托单位:
Development of specular-reflecting wall by super-flattening process and its appliation to vacuum technology
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批准号:07555021
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$9.28万
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财政年份:1995
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负责人:OKANO Tatsuo
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依托单位:
Counting correlation analysis of internal conversion electrons excited by nuclear-resonant synchrotron radiation and its application to surface study
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批准号:07455020
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.86万
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财政年份:1995
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负责人:OKANO Tatsuo
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依托单位:
Study on the Interaction of Polarized Atomic Hydrogen Beam with Solid Surfaces
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批准号:60420021
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$20.16万
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财政年份:1985
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负责人:OKANO Tatsuo
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依托单位:
海外基金