Counting correlation analysis of internal conversion electrons excited by nuclear-resonant synchrotron radiation and its application to surface study
Counting correlation analysis of internal conversion electrons excited by nuclear-resonant synchrotron radiation and its application to surface study
批准号:
07455020
负责人:
OKANO Tatsuo
金额:
$4.86万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996
中文摘要
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英文摘要
The aim of this research project is detection of internal-conversion electrons excited by nuclear resonant synchrotron radiation and its application to advanced studies of solid surfaces.The first step of this project was a development of time-resolved electron energy analyzer. We have designed two kind of such spectrometer. One was based on a retarding field analyzer which consists of three stage ellipsoidal mesh grid. The special feature of this analyzer is a wide detection angle most preferable to the very weak electron signal. We have make use of an avalanche phot-diode (APD) to measure electrons. The signal to noise ratio of APD was superior to conventional channel-type electron multiplier by several hundreds. The other type is a hemispherical deflector-type analyzer combined with a specially designed streak-camera. This system is for a angular-resolved measurement with nice time-resolution. Maximum time resolution is 20ps.The measurement of internal-conversion electron was made at NE-3 beamline in KEK.We have successfully measured a tail of electron emission after irradiation of synchrotron radiation. The sample of this measurement was Fe_2BO_<3.> crystal. To elucidate the nature of delayd emission and new surface phenomena, the measurement of delayd electron emission is continued.
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K.Hata, H.Shigekawa, T.Okano: "The formation mechanism of step bunching on vicinal GaAs(001) annealed in AsH3 and H_2 ambient" J.Vac.Sci.Technol.B. (掲載予定). (1997)
K.Hata、H.Shigekawa、T.Okano:“在 AsH3 和 H_2 环境中退火的邻位 GaAs(001) 的阶梯聚束的形成机制”J.Vac.Sci.Technol.B(即将出版)。 )
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K.Hata: "Modeling of step bunching formed on vicinal GaAs (001) annealed in AsH_3 and H_2 ambient" Physical Review B. (to be published).
K.Hata:“在 AsH_3 和 H_2 环境中退火的邻位 GaAs (001) 上形成的阶梯聚束的建模”Physical Review B.(即将出版)。
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K.Hata.H.SHigekawa.T.Okano: "Modeling of step bunching formed on vicinal GaAs(001) annealed in AsH3 and hydrogen ambient" Phys.Rev.B. (掲載予定). (1997)
K.Hata.H.SHIgekawa.T.Okano:“在 AsH3 和氢气环境中退火的邻位 GaAs(001) 上形成的阶梯聚束模型”Phys.Rev.B(即将出版)。
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加藤 宏、岡野 達雄 他: "回転ミラー型電子分光器の内部転換電子放射への応用" 生産研究. (掲載予定). (1997)
Hiroshi Kato、Tatsuo Okano 等:“旋转镜电子能谱仪在内转换电子发射中的应用”生产研究(待出版)。
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K.Hata,H.SHigekawa.T.Okano: "Modeling of step bunching formed on vicinal GaAs(001)annealed in AsH3 and hydrogen ambient" Phys.Rev.B. (掲載予定). (1997)
K.Hata、H.SHIgekawa.T.Okano:“在 AsH3 和氢气环境中退火的邻位 GaAs(001) 上形成的阶梯聚束的模型”Phys.Rev.B(即将出版)。
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共 6 条
Study on atomic diffusion process promoted by hydrogen absorption measured by time domain analysis of nuclear resonant X-ray scattering
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批准号:21360019
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.9万
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财政年份:2009
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负责人:OKANO Tatsuo
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依托单位:
Development of specular-reflecting wall by super-flattening process and its appliation to vacuum technology
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批准号:07555021
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$9.28万
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财政年份:1995
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负责人:OKANO Tatsuo
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依托单位:
Application of Time-Resolved Electron Spectroscopy to the Dynamics of Interfacial Excitation
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批准号:05452100
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.16万
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财政年份:1993
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负责人:OKANO Tatsuo
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依托单位:
Study on the Interaction of Polarized Atomic Hydrogen Beam with Solid Surfaces
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批准号:60420021
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$20.16万
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财政年份:1985
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负责人:OKANO Tatsuo
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依托单位:
海外基金