Fundamental Research on Functional Realization of Semiconductive Ceramics

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1.Model Interface in Ceramic Multilayred FilmsThe nonlinear V-1 characteristics of semiconductive ceramics originate in a grain boundary or interface. The model interface in multilayred films such as Ni/ZnO (CoO)/Pr_6O_<11>/Au fabricated by the sputtering technique is used for understanding the nonlinear conduction mechanism. The study of such a model interface is useful for searching new artificial materials.Dielectric Anomaly in the Interface of CeramicsA broad peak above the Curie temperature of lead iron niobate pb (Fe_<1/2>Nb_<1/2>) O_3 may be related to interfaces at the grain boundary. Such dielectric anomaly and pyroelectric current of this compound may be explained by the space-charge polarization in the interfaces of the grain bounday due to ionic valence changes from Fe^<3+> to Fe^<2+> in B-site of the perovskite structure.