Study on Heat and Mass Transport in Liquid during Faceted Cellular Array Growth

多面细胞阵列生长过程中液体传热传质的研究

• 批准号: 05452300
• 负责人: KURIBAYASHI Kazuhiko
• 金额: $ 3.84万
• 依托单位: The Institute of Space and Astronautical Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05452300/
• 关键词: Faceted Interface; Surface Kinetics; Heat and Mass Transport; Visualization; 包晶反応; 界面カイネティクス; 二波長干渉法; 界面形態不安定性; 組成的過冷却

In materials whose entropy change due to fusion are large, such as semiconductor, oxide superconductor and other crystalline materials, faceted cellular morphology is often observed on the advancing solid/liquid interface. The mechanism to maintain this faceted morphology at steady-state growth had been accepted by many researchers to be solute pile-up and subsequent undercooling at the bottom of the cellular interface. Higashino, Inatomi and Kuribayashi (HIK), however, reported the appearance of a recalesced region ahead of the faceted interface in transparent organic compounds, using an optical interferometer. In the present study, precise measurement of the temperature distribution ahead of the advancing interface was carried out by means of an interferometric visualization technique as well as a conventional temperature measurement technique using microthermocouples. The result is that the influence of latent heat on the temperature distribution ahead of the interface was correlated qualitatively with a nondimensional parameter defined by the release rate and the diffusion flux of latent heat. In addition, morphological instabilities of the faceted interface were attributed to the change in the temperature distribution.

在融合引起的熵变化的材料中，例如半导体，氧化物超导体和其他晶体材料，经常在前进的固体/液体界面上观察到刻面细胞形态。许多研究人员接受了在稳态生长下维持这种相形形态的机制，以溶质堆积，然后在细胞界面的底部进行底层冷却。但是，使用光学干涉仪，Higashino，Inatomi和Kuribayashi（Hik）在透明有机化合物中报告了在尺寸界面前的重新估计区域的出现。在本研究中，通过干涉可视化技术以及使用微热媒体进行的传统温度测量技术，对前进界面前的温度分布进行精确测量。结果是，潜热对界面前温度分布的影响与由释放速率和潜热的扩散通量定义的非量等参数相关。另外，刻面界面的形态不稳定性归因于温度分布的变化。

项目成果

S.Endoh et al: "Morphological Change of Faceted Materials in Directional Solidification" 11th Int.Conf.Crystal Growth The Hague, The Netherlands. (to appear). (1995)

S.Endoh 等人：“定向凝固中多面材料的形态变化”第 11 届 Int.Conf.Crystal Growth 荷兰海牙。

K.Kuribayashi et al: "Influence of Release and Transport of Latent Heat on Solidification Behavior in Faceted Crystal" to appear in 2nd Int.Conf.Solidification and Gravity, Miskole, Hungary. (1995)

K.Kuribayashi 等人：“潜热释放和传输对刻面晶体凝固行为的影响”将出现在匈牙利米斯科莱举行的第二届国际凝固与重力会议上。

Y.Inatomi他: "Temperature Distribution in front of Faced Celluar Array Growth Interface" J.Crystal Growth. (投稿中).

Y. Inatomi 等人：“平面细胞阵列生长界面前的温度分布”J. 晶体生长（进行中）。

Y.Inatomi他: "Influence of Surface Kinetics on LPE Growth Thickness" J.Crystal Growth. (投稿中).

Y. Inatomi 等人：“表面动力学对 LPE 生长厚度的影响”J. 晶体生长（进行中）。

Y.Inatomi他: "Influence of Convection on Growth Behavior in LPE Grown Semiconductor" 11th Int.Conf.Crystal Growth The Hague,The Netherlands,1995. (投稿中).

Y.Inatomi 等人：“LPE 生长半导体中对流对生长行为的影响”第 11 届 Int.Conf.Crystal Growth 荷兰海牙，1995 年（进行中）。