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Crystallization behavior of semiconducting materrials from Undercooled Melts

过冷熔体半导体材料的结晶行为

基本信息

批准号：
12650743
负责人：
KURIBAYASHI Kazuhiko
金额：
$ 2.11万
依托单位：
The Institute of Space and Astronautical Science
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

Over the past several decades silicon has been one of the most important industrial materials. In this period, electronics industries have strived to increase the size of ingots in order to lower the cost of chip production. The larger the diameter, however, the higher the amount of investments in plants and equipment for processing the substrate has to be. Recently, a challenging idea that will reduce the cost has been proposed ; that is to mount integrated circuit on the surface of small spherical silicon crystal. However, the technique of growing such spherical single crystals needs to be developed. In the present study, the crystallization from the unedercooled drop of silicon was carried out by means of techniques of containerless processing under the controlled undercooling. The measured growth rate vs. undercooling was categorized into three regions, IA, IB, II and III, respectively, from the point of the interface morphology. A thin plate crystal whose interface consisted of bo … More th faceted (III) plane and wavy edge plane like saw-tooth was observed in the region IA where the undercooling is less than 40 K. The Thin plate crystal branched to several plates in the region IB where the undercooling from 40K to 100K. In the region II where the undercolling is from 100K to 200K, regularly arrayed faceted dendrite was observed, whereas irregularly arrayed dendrite was observed in the region III where the undercooling is beyond 200K. Assuming the morphological change of the interface as the three-dimensional destabilization of the edge plane, the critical undercooling for the transition from region I to region II was theoretically estimated as 100 K for the samples whose diameter is 5mm. The theoretical treatment predicts that the critical undercooling will depend on the sample size, that is, the smaller the sample size, the larger die critical undercooling. The sample seeded at temperatures in the region I is a quasisingle crystal with a large grain, except a small area where twinning and a cracking are observed. The result suggests that a single crystal could be grown, if a smaller sample, for instance, 2 or 3mm in diameter, were used. Less

在过去的几十年里，硅一直是最重要的工业材料之一。这一时期，电子行业努力增加晶锭尺寸，以降低芯片生产成本。然而，直径越大，用于处理基板的工厂和设备的投资就越高。最近，有人提出了一个具有挑战性的想法，可以降低成本；即将集成电路安装在小型球形硅晶体的表面上。然而，需要开发生长这种球形单晶的技术。在本研究中，通过在受控过冷下的无容器加工技术，从未过冷的硅滴中进行结晶。从界面形态的角度来看，测得的生长速率与过冷度的关系分别分为三个区域：IA、IB、II 和 III。在过冷度小于40 K的IA区，观察到界面由bo… More th刻面(III)面和锯齿状波状边缘面组成的薄板晶体。在过冷度从40K到100K的IB区，薄板晶体分支成多个板片。在过冷度为100K至200K的区域II中，观察到规则排列的小面枝晶，而在过冷度超过200K的区域III中观察到不规则排列的枝晶。假设界面形貌变化为边缘平面的三维失稳，对于直径为5mm的样品，从I区到II区过渡的临界过冷度理论上估计为100 K。理论处理预测临界过冷度将取决于样品尺寸，即样品尺寸越小，模具临界过冷度越大。在区域 I 的温度下接种的样品是具有大晶粒的准单晶，除了观察到孪晶和裂纹的小区域之外。结果表明，如果使用较小的样品，例如直径为 2 或 3 毫米，则可以生长单晶。较少的