Distribution of impurity elements between flux and melt during the growth of III-V compound semiconductor single crystals.

III-V族化合物半导体单晶生长过程中杂质元素在熔剂和熔体之间的分布。

• 批准号: 05453091
• 负责人: YASUTAKA Iguchi
• 金额: $ 4.22万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05453091/
• 关键词: LEC Method; Oxygen; Distribution; Boron Oxide; Indium Oxide; Gallium Oxide; Activity; 酸化インジウム; 液相線; 溶解度; 状態図; アルミナ

1. Phase diagrams of III group oxide-B_2O_3 binary systems.No phase diagrams has been reported in Ga_2O_3-B_2O_3 and In_2O_3-B_2O_3 systems, and one phase diagram in Al_2O_3-B_2O_3 system. In the present work, solubility of III group oxide (Ga_2O_3, In_2O_3, Al_2O_3) in B_2O_3 melt and the solid phase equilibrated with the melt were determined. The phase diagrams of Ga_2O_3-B_2O_3, In_2 O_3-B_2O_3, and Al_2O_3-B_2O_3 binary systems were constructed with high accuracy using these data.2. Oxygen solubility in liquid gallium and liquid indium.The oxygen solubility in liquid gallium or liquid indium equilibrated with solid Ga_2O_3 or In_2O_3, respectively was determined as follows :log (O/mass% in liquid gallium) =-6200/T+2.61 (T : 1123-1523 K)log (O/mass% in liquid indium) =-6600/T+3.77 (T : 1073-1373 K)Using the temperature dependence of the oxygen solubility, the standard free energy change for oxygen dissolution in liquid gallium or liquid indium could be represented as follows :1/20O_2 (g) =O (mass% in liquid gallium) , DELTAGﾟ=-2.45x10^5+59.6T (J)1/20O_2 (g) =O (mass% in liquid indium) , DELTAGﾟ=-1.79x10^5+33.8T (J)3. Oxygen distribution between flux and meltOxygen distribution between III group metal oxide (Ga_2O_3 or In_2O_3) -B_2O_3 binary flux and liquid III group metal (Ga or In) was investigated in the view point of fundamental study for LEC method. Distribution ratio of oxygen for the Ga system at 1423 K and the In system at 1373 to 1473 K were determined. The activity of Ga_2O_3 and In_2O_3 in B_2O_3 flux were found to be small, which suggested that oxygen content in III-V compound melts might be suppressed to be lower level in the LEC process.

1.Ⅲ族氧化物-B_2O_3二元系相图：Ga_2O_3-B_2O_3和In_2O_3-B_2O_3二元系相图未见报道，Al_2O_3-B_2O_3二元系相图有报道。本文测定了三族氧化物（Ga_2O_3，In_2O_3，Al_2O_3）在B_2O_3熔体中的溶解度及与熔体平衡的固相。利用这些数据高精度地绘制了Ga_2O_3-B_2O_3、In_2O_3-B_2O_3和Al_2O_3-B_2O_3二元系相图.氧在液体镓和液体铟中的溶解度，分别用固体Ga_2O_3或In_2O_3平衡的液体镓或液体铟中的溶解度测定如下：log（0/液体镓中的质量%）=-6200/T+2.61（T：1123-1523 K）log（0/液体铟中的质量%）=-6600/T+3.77（T：1073-1373 K）利用氧溶解度的温度依赖性，氧在液体镓或液体铟中溶解的标准自由能变化可以表示如下：1/20 O_2（g）=O（在液体镓中的质量%），DELTAG_（10）=-2.45 × 10_5 +59.6T（J）1/20 O_2（g）=O（在液体铟中的质量%），DELTAG_（10）=-1.79 × 10_5 +33.8T（J）3.本文从LEC法基础研究的角度出发，研究了第三族金属氧化物（Ga_2O_3或In_2O_3）-B_2O_3二元熔剂与液态第三族金属（Ga或In）之间的氧分布。在1423 K和1373 ~ 1473 K的温度范围内，测定了Ga系和In系的氧分配比。B_2O_3熔剂中Ga_2O_3和In_2O_3的活度很小，说明LEC法可以将III-V族化合物熔体中的氧含量抑制在较低的水平。

项目成果

D.Sajuti et al.: "Phase Diagram of the Ga_2O_3-B_2O_3 and In_2O_3-B_2O_3 Binary Systems" Mater.Trans.JIM. 34. 1195-1199 (1993)

D.Sajuti 等人：“Ga_2O_3-B_2O_3 和 In_2O_3-B_2O_3 二元系统的相图”Mater.Trans.JIM。

D.Sajuti: "Solubility of Ga_2O_3 or In_2O_3 in Liquid B_2O_3" Proc. 4th Int. Conf. on Molten Slags and Fluxes. 614-619 (1992)

D.Sajuti：“Ga_2O_3 或 In_2O_3 在液体 B_2O_3 中的溶解度”Proc。

T.Narushima: "Oxygen solubility in liquid gallium and liquid indium" J.Jpn. Ins. Met.59-1. 37-43 (1995)

T.Narushima：“液态镓和液态铟中的氧溶解度”J.Jpn。

D.Sajuti: "Phase Diagram of the Ga_2O_3-B_2O_3 and In_2O_3-B_2O_3 Binary Systems" Mater. Trans. JIM. 34-12. 1195-1199 (1993)

D.Sajuti：“Ga_2O_3-B_2O_3 和 In_2O_3-B_2O_3 二元系统的相图”。

D.Sajuti et al.: "Solubility of Ga_2O_3 or In_2O_3 in Liquid B_2O_3" Proc.4th Int.Conf.on Molten Slags and Fluxes. 614-619 (1992)

D.Sajuti 等人：“Ga_2O_3 或 In_2O_3 在液体 B_2O_3 中的溶解度”Proc.4th Int.Conf.on Molten Slags and Fluxes。