Ab-initio Molecular Dynamis Simulation of Metastalde Defect by Electronic Excitation
Ab-initio Molecular Dynamis Simulation of Metastalde Defect by Electronic Excitation
批准号:
05640369
负责人:
KATAYAMA-YOSHIDA Hiroshi
金额:
$1.28万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994
中文摘要
用从头算分子动力学方法研究了非晶硅(a-Si)、氢化非晶硅(a-Si:H)和晶体硅(c-Si)中孤立悬挂键(D)的性质。我们发现,在所有情况下,sp^3和sp^2类构型的悬挂键都表现出较大的晶格弛豫。类sp^3构型的中性悬挂键表现出负的有效U性质,具有较大的晶格弛豫。因此,中性悬挂键(D^0)在热平衡时是不稳定的,并且不成比例地变成带负电和带正电的悬挂键; 2D^0 --> D^- + D^+。另一方面,sp^2-like构型的中性悬挂键表现出正的有效U性质,随着化学势的增加,悬挂键中出现了带负电荷的悬挂键,悬挂键中的这种具有正负有效U性质的双稳性与X射线辐照增强非晶硅晶化的微观机制有关,即空位间隙-通过X射线照射形成电子对降低了空位的形成能并增强了结晶。我们还发现类sp^3构型悬挂键的负有效U性质与Staebler-Wronski效应的起源有关,其中类sp^2构型的正有效U的中性悬挂键是由可见光照射下的复合增强缺陷反应产生的。我们的预测可以非常合理地解释所有可用的实验数据。
英文摘要
The nature of the isolated dangling-bonds (D) in amorphous silicon (a-Si), hydrogenated amorphous silicon (a-Si : H) and crystalline silicon (c-Si) are investigated using ab-initio molecular-dynamics simulation. We find that the bistability of dangling-bonds at sp^3- and sp^2-like configuration which exhibit a large lattice-relaxation in all cases. Neutral dangling-bond at sp^3-like configuration shows negative effective-U nature with large lattice-relaxation. Therefore the neutral dangling-bond (D^0) is unstable at the thermal equilibrium and disproportionate into negatively- and positively-charged dangling-bond ; 2D^0 --> D^- + D^+. On the other hand, neutral dangling-bond at sp^2-like configuration shows positive effective-U nature, and positively-, neutrally-, and negatively-charged dangling bonds appear with increasing the chemical potential.These bistabilities in dangling-bonds with the positive and negative effective-U nature are related to the microscopic mechanism of the X-ray-irradiation-enhanced crystallization in amorphous silicon in which the vacancy-interstitial-pair formation by X-ray irradiation reduces the formation energy of the vacancy and enhances the crystallization. We also find that the negative effective-U nature of the dangling-bond at sp^3-like configuration is related to the origin of Staebler-Wronski effect in which the neutral dangling-bonds of positive effective-U at sp^2-like configuration are created by the recombination-enhanced defect-reaction with the exposure to the visible light. Our prediction can explain all available experimental data very reasonably.
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T.Takahashi, T.Morikawa, H.Katayama-Yoshida, S.Hasegawa, H.Inokuchi, K.Seki, S.Hino, K.Kikuchi, S.Suzuki, K.Ikemoto, and Y.Achiba: "Electronic Structure of Doped C_<60> : Strong Correlation or Lattice Distortion" The Proceedings of International Conferenc
T.Takahashi、T.Morikawa、H.Katayama-Yoshida、S.Hasekawa、H.Inokuchi、K.Seki、S.Hino、K.Kikuchi、S.Suzuki、K.Ikemoto 和 Y.Achiba:“电子结构
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N.Orita, T.Sasaki and H.Katayama-Yoshida: "Electronic Structure and Dynamics of Defect in a-Si : H by ab-initio Molecular Dynamics" Proceedings of MRS Symposium. Vol.297. 171-176 (1993)
N.Orita、T.Sasaki 和 H.Katayama-Yoshida:“从头开始分子动力学研究 a-Si 中缺陷的电子结构和动力学:H”MRS 研讨会论文集。
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H.Katayama-Yoshida and T.Takahashi: "Similarity and Dissimilarity of Doped Fullerenes and Oxide Superconductors from the View Points of Electronic Structure.[Invited Paper]" J.Phys.Chem.Solid.54. 1817- (1993)
H.Katayama-Yoshida 和 T.Takahashi:“从电子结构的角度看掺杂富勒烯和氧化物超导体的相似性和不同性。[特邀论文]”J.Phys.Chem.Solid.54。
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C.Kanda,T.Sasaki,H.datayama.Yoshida: "Effect of Carbon on Anharmonic Vibration of Crystalline Silicon" Materials Science Forum. 143・147. 957-962 (1994)
C.Kanda、T.Sasaki、H.datayama.Yoshida:“碳对晶体硅非简谐振动的影响”材料科学论坛 143・147(1994)。
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H.Katayama-Yoshida, T.Sasaki and T.Oguchi: "p-type Doping in Wide-gap semiconductors and New Materials Science." Special Issue : Dynamics of Non-Equilibrium Solid by Electronic Excitation-Towards the Creation of New Materials science in Solid State Physic
H.Katayama-Yoshida、T.Sasaki 和 T.Oguchi:“宽禁带半导体和新材料科学中的 p 型掺杂”。
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共 32 条
Spin Control in Semiconductor Nanostructures
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批准号:09244105
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$76.29万
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财政年份:1997
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负责人:KATAYAMA-YOSHIDA Hiroshi
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依托单位:
海外基金