Highly accurate measurement of crystallization temperature of hydrogenated amorphous silicon films

高精度测量氢化非晶硅薄膜的结晶温度

• 批准号: 05650312
• 负责人: MOTOHASHI Mitsuya
• 金额: $ 1.41万
• 依托单位: Tokyo Denki University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05650312/
• 关键词: amorphous silicon; microcrystallization temperature; hydrogen evolution characteristics; film structure evaluation; 結晶化温度

A new method for measuring the microcrystallization temperature of hydrogenated amorphous silicon (a-Si : H) films with high accuracy was studied by using hydrogen evolution characteristics. The following results were obtained.1. Improvement in the measuring system of hydrogen evolution characteristics.To obtain a clean vacuum system, we replaced an oil-sealed rotary pump with a turbo-moleculer pump. High-speed data processing and analysis were carried out through the computer.2. Optimum conditions for measuring the microcrystallization temperature.Optimum conditions for measuring hydrogen evolution characteristics such as vacuum pressure, temperature raising-rate, sample size, atomic mass number and sensitivity of analyzer, were examined.3. Structural changes of the film with its microcrystallization.Microcrystallization process in a-Si : H films has been studied by means of hydrogen evolution characteristics, X-ray diffraction and electrical properties of the films. Microcrystallization process of a-Si : H films was found to depend strongly on both the activation energy of the growth of crystalline nuclei and the density of crystalline neclei.From the above results and discussion, we concluded that the highly accurate measurement of crystallization temperature would be performed by means of the hydrogen evolution characteristics. Moreover, we found that this method is simpler than the conventional method based on X-ray diffraction, and requires only one sample for the determination of microcristallization temperature. This method will be useful for the evaluation of the quality of an a-Si : H film on the basis of the film structures, as well as the high-accurate measurement of microcrystallization temperature.

研究了一种利用析氢特性高精度测量氢化非晶硅（a-Si：H）薄膜微晶化温度的新方法。得到以下结果.析氢特性测量系统的改进。为了获得清洁的真空系统，我们用涡轮分子泵取代了油封旋转泵。通过计算机进行高速数据处理和分析.考察了真空度、升温速率、样品尺寸、原子质量数和分析仪灵敏度等测定析氢特性的最佳条件.利用析氢特性、X射线衍射和薄膜电学性质研究了a-Si：H薄膜的微晶化过程。发现a-Si：H薄膜的微晶化过程强烈地依赖于晶核生长的激活能和晶核密度.从上述结果和讨论中，我们得出结论：利用析氢特性可实现高精度的晶化温度测量.此外，我们发现，这种方法比传统的基于X射线衍射的方法更简单，并且只需要一个样品来确定微晶化温度。该方法可用于根据薄膜结构评价a-Si：H薄膜的质量，以及高精度测量微晶化温度。

项目成果

Mitsuya Motohashi: "Microcrystallization Process of Hydrogenated Amorphous Silicon Films" Electronics and Communications in Japan,Part2. 76. 92-94 (1993)

Mitsuya Motohashi：“氢化非晶硅薄膜的微晶化过程”日本电子与通信，第2部分。