Studies of miky transparent conducting ZnO : Al films with textured surface

具有纹理表面的乳白色透明导电ZnO:Al薄膜的研究

• 批准号: 05650315
• 负责人: FUKUDA Ichirou
• 金额: $ 1.34万
• 依托单位: KANAZAWA INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05650315/
• 关键词: Transparent conducting ZnO films; milky transparent conducting ZnO films; ZnO films with a textured surface; haze ratio; sputterd ZnO films; CVD ZnO films; ZnO:Al; CVD; TCO; 太陽電池用透明電極; ZnO; AlドープZnO; 表面テクスチャー; ミルキー膜; 透明電極

Purpose and results of this project are shown as follows. We report transparent and conductive zinc oxide thin films prepared by CVD and dc magnetron sputtering.In the case of CVD films : Transparent and conducting zinc oxide (ZnO) films have been prepared on glass substrate by atomospheric and low pressure chemical vapor deposition (CVD) using zinc acetylacetonate (Zn(C_5H_7O_2)_2) and oxygen sources of water (H_2O) and hydrogen peroxide (H_2O_2). It was found that H_2O and H_2O_2, which incliude hydrogen, were better oxygen sources than an oxygen-containing gas such as air. Al-doped ZnO films with a resistivity as low as 7 X 10^<-3> OMEGAcm and haze ratio up to 62% at wave length of 550 nm were prepared at a substrate temperature of 350 ﾟC and a low pressure of 60 Torr using aluminium acetylacetonate (Al(C_5H_7O_2)_3) as the dopant source.In the case of sputtered films : Transparent and conductive milky ZnO films with a textured surface were prepared by dc magnetron sputtering using ZnO targets with an Al2O3 content in the range 0-2.0 wt%. The grain growth and surface morphology were considerably dependent on the Al2O3 content, ranging from a disk-like textured surface for undoped ZnO films to a wedge-like textured surface for ZnO : Al films prepared with a content above 0.5 wt%. The transmittance in the near-infrared range of milky ZnO : Al films prepared with an Al2O3 content of 0.75 wt% was considerably better than that of films prepared with a content of 2.0 wt%. A sheet resistance as low as 3.2 OMEGA/*, a transmittance of 78 % and a haze ratio of 65 % at a wave length of 550 nm were obtained for milky ZnO : Al films 3 mum thick prepared with an Al2O3 content of 0.75 wt%.

本项目的目的和成果如下。报道了用化学气相沉积(CVD)和直流磁控溅射法制备透明导电氧化锌薄膜。在化学气相沉积(CVD)薄膜中，以乙酰丙酮锌(C5H7O2)2为原料，水(H2O)和过氧化氢(H2O)为氧源，采用常压低压化学气相沉积(CVD)方法在玻璃衬底上制备了透明导电氧化锌薄膜。结果表明，含氢的H_2O和H_2O_2是比空气等含氧气体更好的氧源。以乙酰丙酮铝(Al(C_5H_7O_2)_3)为掺杂源，在衬底温度350ﾟC，低压60Torr的条件下制备了电阻率低至7×10~(-3)；OMEGAcm，雾度达62%的掺铝氧化锌薄膜。对于溅射薄膜，采用直流磁控溅射法制备了透明导电乳白色氧化锌薄膜。Al_2O_3含量对薄膜的晶粒生长和表面形貌有很大的影响，未掺杂的薄膜为盘状织构表面，含量大于0.5wt%的薄膜为楔形织构表面。当Al_2O_3含量为0.75wt%时，制备的乳白色ZnO：Al薄膜的近红外透过率明显高于含量为2.0wt%时制备的薄膜。当Al_2O_3含量为0.75wt%时，3微米厚的乳白色ZnO：Al薄膜的方阻为3.2 omega/*，透过率为78%，雾度为65%。

项目成果

H.Sato et al.: "Transparent conducting ZnO thin films prepared on low temperature substrate by CVD using Zn(C5H7O2)2)" Thin Solid Films. 246. 65-70 (1994)

H.Sato 等人：“使用 Zn(C5H7O2)2) 通过 CVD 在低温基底上制备透明导电 ZnO 薄膜”固体薄膜。

T.Minami et al.: "Transparent and conductive ZnO thin films prepared by atmospheric-pressure CVD using zine acetylacetonate" Jpn.J.Appl.Phys.33. L743-L746 (1994)

T.Minami 等人：“使用乙酰丙酮锌通过常压 CVD 制备透明导电 ZnO 薄膜”Jpn.J.Appl.Phys.33。

H.Sato, T.Minami, T.Miyata, S.Takata and M.Ishii: ""Transparent conducting ZnO thin films prepared on low temperature substrates by chemical vapor deposition using Zn(C_5H_7O_2)_2"" Thin Solid Films. 246. 65-70 (1994)

H.Sato、T.Minami、T.Miyata、S.Takata 和 M.Ishii：“使用 Zn(C_5H_7O_2)_2 通过化学气相沉积在低温基底上制备透明导电 ZnO 薄膜””固体薄膜。

H.Sato et al.: "Alumlnium content dependence of milky transparent conducting ZnO : Al with textured surface prepared by dc magnetron sputtering" Thin Solid Films. 246. 86-91 (1994)

H.Sato 等人：“通过直流磁控溅射制备的具有纹理表面的乳状透明导电 ZnO : Al 的铝含量依赖性”固体薄膜。

T.Minami, H.Sonohara, S.Takata and H.Sato: ""Transparent conductive ZnO thin films prepared by atomospheric-pressure chemical vapor deposition using zinc acethylacetonate"" Jpn.J.Appl.Phys.33. L743-L746 (1994)

T.Minami、H.Sonohara、S.Takata 和 H.Sato：“使用乙酰丙酮锌通过大气压化学气相沉积制备透明导电 ZnO 薄膜”Jpn.J.Appl.Phys.33。