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Computer Studies of Culster Implantation

集群植入的计算机研究

基本信息

批准号：
05650318
负责人：
YAMAMURA Yasunori
金额：
$ 1.47万
依托单位：
Okayama University of Science
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05650318/
关键词：
Monte Carlo simulation Binary collision approximation Cluster ion Channeling Dechanneling Many body effect Time-evolutional simulation Depth profile Projected range 時間発展型シミュレーションクラスタービーム 2体間衝突近似

项目摘要

In order to investigate the basic processes of the cluster implantation interaction of an ionized cluster beam with solids, we have developed the time-evolution Monte Carlo simulation codes DYACOCT.The DYACOCT code can be applied to the investigation of the cluster-impact phenomenon in a crystalline solid. In this program which is based on the binary collision approximation, trajectories of ions and recoil atoms are follwed dynamically. The effect of the multiple collisions of channeling particles is estimated precisely by the Molecular dynamic technique. In order to overcome the difficulties of the binary collision approximation of a low-energy projectile, many body encounter are also numerically solved by the molecular dynamics method, where a projectile collides at the same time with many atoms within its collision diameter. These codes can be successfully applied to the simulations of the radiation damage, the cluster-impact phenomena, the interaction of a highly charged particles … More with the solid surface and sputtering due to cluster impacts.In order to specify the cluster effect of the cluster beam on the depth profile, It is necessary to know the depth profiles due to the ion implantation. For this purpose, the depth profiles of implanted ions has been calculated by the MARLOWE-like code, ACOCT code, where we used the (110) planar channeling and the <110> axial channeling of Si crystal. As an implantedion we used As^+ ion, because the clear-the-way effect of cluster ions is considered to be enhanced for the As-Si combination. For both 1.06 MeV As^+ on (100) Si surface and 20 keVAs^+ on (110) Si surface the calculated depth profile have two peaks, i.e., the random peak and the channeling peak. The former channeling peak is due to the planar channeling and the latter due to the axial channeling.The cluster implantation was investigated by the DYACOCT code. The simulated depth profile due to 20 keV/atom (As)_n (n>10) bombarded normally on (110) Si surface has two interesting features : The random peak is shifted to the deeper layr than that of a single ion implantation. The second interesting feature is that the axial channeling peak is strongly deduced. Since M_<21>M_1 is less than unity for this combination, a lot of Si atoms have larger velocities than incident As atoms, and they clear the way for aftercoming cluster atoms, and they destroy the channel before cluster atoms come. Less

为了研究电离团簇束与固体团簇注入相互作用的基本过程，我们开发了时间演化蒙特卡罗模拟程序DYACOCT。DYACOCT程序可以应用于结晶固体中团簇碰撞现象的研究。在这个基于二元碰撞近似的程序中，动态地跟踪离子和反冲原子的轨迹。通过分子动力学技术可以精确估计通道粒子多次碰撞的效果。为了克服低能弹丸二元碰撞近似的困难，许多物体遭遇也通过分子动力学方法进行数值求解，其中弹丸在其碰撞直径内同时与许多原子碰撞。这些代码可以成功地应用于辐射损伤、簇撞击现象、高带电粒子与固体表面的相互作用以及簇撞击引起的溅射的模拟。为了指定簇束对深度剖面的簇效应，有必要了解离子注入引起的深度剖面。为此，通过类似 MARLOWE 的代码 ACOCT 代码计算了注入离子的深度剖面，其中我们使用了 Si 晶体的 (110) 平面沟道和 <110> 轴向沟道。作为注入，我们使用 As^+ 离子，因为簇离子的畅通效应被认为对于 As-Si 组合会增强。对于 (100) Si 表面上的 1.06 MeV As^+ 和 (110) Si 表面上的 20 keVAs^+ ，计算的深度剖面有两个峰值，即随机峰值和沟道峰值。前者的沟道峰值是由于平面沟道引起的，后者是由于轴向沟道引起的。通过DYACOCT代码对簇注入进行了研究。由于 20 keV/atom (As)_n (n>10) 在 (110) Si 表面上正常轰击而模拟的深度剖面有两个有趣的特征：随机峰比单次离子注入的峰移动到更深的层。第二个有趣的特征是轴向沟道峰值被强烈推导。由于该组合的M_<21>M_1小于1，所以许多Si原子比入射的As原子具有更大的速度，它们为随后到来的团簇原子扫清了道路，并在团簇原子到来之前破坏了通道。较少的