权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Application of Circuit Theory to Synthesis of New Materials Using Quantum Effect

电路理论在量子效应新材料合成中的应用

基本信息

批准号：
05650321
负责人：
NAGAI Nobuo
金额：
$ 1.54万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1995
项目状态：
已结题

项目摘要

The objective of this research projects is to show new synthesis methods of semiconductor superlattices, and multiple barrier and well structures deriving physically new characteristics utilizing quantum effect. The following results are obtained.(I) Since the lifetime of the resonant state is defined as the transit time to estimate operation speed in double barrier resonant tunneling devices, it is related to the energy width of reasonant level. We propose to obtain the lifetime by utilizing the complex energy of Laplace parameter used in the circuit theory. We show that we easily obtain the lifetime for multiple barrier and well structures.(II) By obtaining complex equivalent circuits for heterointerfaces, we analyze GAMMA-X mixing and quantum wells of Type II or III.By obtaining complex equivalent circuits for boundary conditions, we obtain eigenenergy of quantum well and mini-band structure of periodic potential constituted by GaAs/Al _xGa_<1-x> As, InAs/GaSb. We obtain a synthesis method of one-dimentional potential structure including delta potential with given electron transfer characteristics. We also obtain the equivalent circuit for the 2-band model prposed by Kane, to represent wave characteristics of RIT (Resonant Interband Tunneling) consituted with GaSb, InAs, AlSb.(III) In order to make resonant tunneling diodes more effectively, we propose synthesizing methods to obtain a resonant tunneling level in the conduction band under the Fermi level. We also show an efficient method using deep wells.(IV) We discuss quantum friction. Electrical friction corresponds to energy loss. Since we derive Telegrapher's type equation from Schrodinger equation, we obtain two waves of voltage and current corresponding to wave function. By using these two waves, we can analyze quantum friction as electrical loss.(V) Some quantum waves are presented by Dirac operator. We show some fundamental characteristics of Dirac operator by obtaining the quivalent circuit.

本研究项目的目的是展示利用量子效应获得物理新特性的半导体超晶格、多势垒和阱结构的新合成方法。得到如下结果：(1)由于谐振态寿命定义为双势垒谐振隧穿装置中估计运行速度的穿越时间，因此它与合理能级的能宽有关。我们提出利用电路理论中拉普拉斯参数的复能量来计算寿命。结果表明，我们可以很容易地得到多个屏障和井结构的寿命。（II）通过获得异质界面的复杂等效电路，我们分析了γ - x混合和II型或III型量子阱。通过边界条件下的复杂等效电路，我们得到了量子阱的本征能和由GaAs/Al _xGa_<1-x> As， InAs/GaSb构成的周期势的小带结构。在给定电子传递特性的条件下，我们得到了包含δ势的一维势结构的合成方法。我们还得到了Kane提出的2波段模型的等效电路，以表示由GaSb、InAs、AlSb组成的RIT（谐振带间隧道）的波特性。（三）为了更有效地制造共振隧穿二极管，我们提出了在费米能级以下的导带中获得共振隧穿能级的合成方法。我们还展示了一种利用深井的有效方法。（四）讨论量子摩擦。电摩擦相当于能量损失。由薛定谔方程导出电报型方程，得到对应于波函数的电压和电流两波。利用这两种波，我们可以把量子摩擦作为电损耗来分析。（五）用狄拉克算子表示了一些量子波。通过得到狄拉克算子的等效电路，证明了狄拉克算子的一些基本特性。