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Ultrasonic Devices Employing Piezoelectric Ta_2O_3/Pyrex-Glass Structure

Ultrasonic Devices Employing Piezoelectric Ta_2O_3/Pyrex-Glass Structure
采用压电Ta_2O_3/派热克斯玻璃结构的超声波器件
批准号:
05650324
负责人:
YAMAGUCHI Masatsune
金额:
$1.41万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994

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项目成果

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中文摘要
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英文摘要
This project aimed at the realization of composite diaphragm structure employing Ta_2O_5/Pyrex-glass structure for the application to high-performance ultrasonic wave devices operating in VHF to UHF ranges.Firstly, deposition of ZnO films by the use of target-facing type of sputtering method was investigated. The result showed that this sputtering method enables to deposit very dense and well-oriented films, which can be successfully applied to the ultrasonic transducers operating in UHF range. Note that the film quality is degraded due to the grow discharge caused by the oxidisation of the sputtering targets. It was shown that the substrate temoerature must be raised to 400゚C for the growth of piezoelectric Ta_2O_5. Since this temperature may cause fracture of the diaphragm, following experiments were carried out by using ZnO film instead of Ta_2O_5.Secondly, fabrication process for the piezoelectric ZnO/Pyrex-glass composite diaphragm structure was investigated. It was shown that the Pyrex-glass suffers much stress during the anisotropy etching, and the stress results in deterioration of device perfomances. For its suppression, the investigators proposed deposition of Si layr, compliance of which diffuses the stress throughout the diaphragm. In addition, it was also shown that strain in the diaphragm can be further reduced by the use of Si_3N_4 layr as a protection layr.Thirdly, the piezoelectric thin-film resonators was developed by using the diaphragm structure, and the resonant Q attained to 600 at the fundamental resonance frequency of 250MHz. Then the fabrication process was extended so as to float the diaphragm from the substrate, and the resonator operating in 500MHz was realized. This clearly exhibits possibility for the monolithic integration of high frequency ultrasonic devices with semi-conductor electronic circuitry.
期刊论文(50)
专著(0)
科研奖励(0)
会议论文
山口正恆: "浮き構造を用いた超小型超音波トランスジューサ" 第22回EMシンポジウム予稿集. 1-5 (1993)
Masatoshi Yamaguchi:“使用浮动结构的超紧凑超声波换能器”第 22 届 EM 研讨会论文集 1-5 (1993)。
DOI: --
发表时间:
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作者: []
通讯作者:
M.Yamaguchi and K.Hashimoto: "Composite Diaphragm Transducers Employing Air-Gap Structure" Cho-onpa Techno. 6. 34-38 (1994)
M.Yamaguchi 和 K.Hashimoto:“采用气隙结构的复合膜片换能器”Cho-onpa Techno。
DOI: --
发表时间:
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作者: []
通讯作者:
Y.Makishima, K.Hashimoto and M.Yamaguchi: "Thin-Film Bulk Acoustic Resonators Employing ZnO/Pyrex-Glass Composite Diaphragm Structure" Jpn.J.Appl.Phys.Vol.32, No.5B. 2998-3000 (1994)
Y.Makishima、K.Hashimoto 和 M.Yamaguchi:“采用 ZnO/Pyrex 玻璃复合隔膜结构的薄膜体声学谐振器”Jpn.J.Appl.Phys.Vol.32,No.5B。
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通讯作者:
S.Yoshimoto, M.Sakamoto, K.Hashimoto and M.Yamaguchi: "High-Frequency Devices Using ZnO/Pyrex-Glass Composite Structure Employing Employing Air-Gap Structure" Convention Record of Acoustic Society of Jpn. 1-P-20 (1994)
S.Yoshimoto、M.Sakamoto、K.Hashimoto 和 M.Yamaguchi:“采用气隙结构的 ZnO/Pyrex 玻璃复合结构的高频装置”日本声学学会会议记录。
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通讯作者:
24
    Devices Employing Piezoelectric Boundary Waves for Integration with Semiconductor Circuitry
    • 批准号:
      13650371
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.62万
    • 财政年份:
      2001
    • 负责人:
      YAMAGUCHI Masatsune
    • 依托单位:
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    • 批准号:
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    • 项目类别:
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    • 资助金额:
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    • 财政年份:
      1986
    • 负责人:
      YAMAGUCHI Masatsune
    • 依托单位:
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