The basic study for LSI-device applications of the single-crystal sapphire films grown by molecular layer epitaxy.

本研究项目的目标是确定分子层表面单晶体绝缘-蓝宝石（<alpha>-Al_2O_3）薄膜和蓝宝石薄膜应用到LSI设备的方法，以使LSI设备性能更高。本研究获得的结果如下： 1。单水晶蓝宝石薄膜是第一次在蓝宝石（0001）和（11^^-02）以上的薄膜[600 ° C]通过分子层外延方法替代使用AlCl_3蒸汽传输和He 15%O_2气体混合物（以[5x 10_&lt;-3&gt;Pa的压力）到生长室中的薄膜。蓝宝石电影的平均增长率是可以观察到的[0.09 nm/周期的天然气运输.2]。AlCl （and/or AlCl_2） molecules produced by AlCl_3 dissociation would probably compose a monolayer of absorbates and react with oxygen molecules on a substrate so that each monolayer of Al_2O_3 is made. 3。蓝宝石（112^^-0）薄膜在单水晶Nb （100）薄膜清洁表面的外延增长[500 ° C用分子层外延方法第一次确认]。“Nb电影的表面可以被蓝宝石电影覆盖，带有几种奇怪的气味。”这一过程对于制造单一克里斯托·约瑟芬联合体是很重要的。

The purpose of this research project is to clarify the growth mechanism of molecular-layerepitaxial single-crystal insulating-sapphire (<alpha>-Al_2O_3) films and the methods of applications of the sapphire films to LSI devices, in order to make the performance of the LSI devices higher.Results obtained in this research are as follows: 1. Single-crystal sapphire films are, for the first time, successfully grown homoepitaxially on sapphire (0001) and (11^^-02) wafers above [[600゜C by the molecular layer epitaxy method which uses alternate transports of AlCl_3 vapor and a He 15%O_2 gas mixture (with a pressure of [[5x10_<-3>Pa) to the wafers in a growth chamber. The average growth rates of the sapphire films are observed to be [[0.09nm per cycle of gas transport.2. AlCl (and/or AlCl_2) molecules produced by AlCl_3 dissociation would probably compose a monolayer of absorbates and react with oxygen molecules on a substrate so that each monolayer of Al_2O_3 is made.3. The epitaxial growth of sapphire (112^^-0) films on the clean surfaces of single-crystal Nb (100) films at [[500゜C by the molecular layer epitaxy method is also confirmed for the first time. The surface of the Nb film can be covered by the sapphire film with the thickness of several angstroms. This process is important for fabricating single-crystal Josephson junctions.