The basic study for LSI-device applications of the single-crystal sapphire films grown by molecular layer epitaxy.

分子层外延生长单晶蓝宝石薄膜大规模集成电路器件应用的基础研究。

基本信息

批准号：
61460121
负责人：
OYA Gin-ichiro
金额：
$ 4.86万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1987
项目状态：
已结题

项目摘要

The purpose of this research project is to clarify the growth mechanism of molecular-layerepitaxial single-crystal insulating-sapphire (<alpha>-Al_2O_3) films and the methods of applications of the sapphire films to LSI devices, in order to make the performance of the LSI devices higher.Results obtained in this research are as follows: 1. Single-crystal sapphire films are, for the first time, successfully grown homoepitaxially on sapphire (0001) and (11^^-02) wafers above [[600゜C by the molecular layer epitaxy method which uses alternate transports of AlCl_3 vapor and a He 15%O_2 gas mixture (with a pressure of [[5x10_<-3>Pa) to the wafers in a growth chamber. The average growth rates of the sapphire films are observed to be [[0.09nm per cycle of gas transport.2. AlCl (and/or AlCl_2) molecules produced by AlCl_3 dissociation would probably compose a monolayer of absorbates and react with oxygen molecules on a substrate so that each monolayer of Al_2O_3 is made.3. The epitaxial growth of sapphire (112^^-0) films on the clean surfaces of single-crystal Nb (100) films at [[500゜C by the molecular layer epitaxy method is also confirmed for the first time. The surface of the Nb film can be covered by the sapphire film with the thickness of several angstroms. This process is important for fabricating single-crystal Josephson junctions.

该研究项目的目的是阐明分子 - 层状单晶绝缘式sapphire（<Alpha> -AL_2O_3）膜以及蓝宝石膜到LSI设备的应用方法的方法，以使LSI设备的性能更高。第一次在蓝宝石（0001）上成功生长（11 ^^ - 02）的摇动[[[600 c c y y分子层外尾法，使用Alcl_3蒸气的替代运输和A HE 15％O_2气体混合物的替代运输（并得到[5x10 _ <-3> pa）的压力，即观察到蓝宝石膜的平均生长速率为[[每周循环0.09nm。 ALCL_3解离产生的ALCL（和/或ALCL_2）分子可能会组成吸收剂的单层，并与底物上的氧分子反应，以便使Al_2O_3的每个单层制成3。蓝宝石（112 ^^ - 0）膜在[[[500 c c y fious the Molecular lieplay by the Molecular lilecular file the Molecular lilecular liles lime tim flenght）膜在[[[500 c c y cy firmarecular lise fie）膜上在[[500 c c vy the Molecular lolecular liles liles lible firter the Molecular lilecular liles liers limecular lie the Molecular liles层的外交方法''的外观生长也首次被首次证实。 NB膜的表面可以被蓝宝石膜覆盖，并具有几个埃埃斯特罗姆的厚度。此过程对于制造单晶约瑟夫森连接很重要。