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The basic study for LSI-device applications of the single-crystal sapphire films grown by molecular layer epitaxy.

分子层外延生长单晶蓝宝石薄膜大规模集成电路器件应用的基础研究。

基本信息

批准号：
61460121
负责人：
OYA Gin-ichiro
金额：
$ 4.86万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1987
项目状态：
已结题

项目摘要

The purpose of this research project is to clarify the growth mechanism of molecular-layerepitaxial single-crystal insulating-sapphire (<alpha>-Al_2O_3) films and the methods of applications of the sapphire films to LSI devices, in order to make the performance of the LSI devices higher.Results obtained in this research are as follows: 1. Single-crystal sapphire films are, for the first time, successfully grown homoepitaxially on sapphire (0001) and (11^^-02) wafers above [[600゜C by the molecular layer epitaxy method which uses alternate transports of AlCl_3 vapor and a He 15%O_2 gas mixture (with a pressure of [[5x10_<-3>Pa) to the wafers in a growth chamber. The average growth rates of the sapphire films are observed to be [[0.09nm per cycle of gas transport.2. AlCl (and/or AlCl_2) molecules produced by AlCl_3 dissociation would probably compose a monolayer of absorbates and react with oxygen molecules on a substrate so that each monolayer of Al_2O_3 is made.3. The epitaxial growth of sapphire (112^^-0) films on the clean surfaces of single-crystal Nb (100) films at [[500゜C by the molecular layer epitaxy method is also confirmed for the first time. The surface of the Nb film can be covered by the sapphire film with the thickness of several angstroms. This process is important for fabricating single-crystal Josephson junctions.

本研究旨在阐明分子层外延单晶绝缘蓝宝石（<alpha>-Al_2O_3）薄膜的生长机理及其在大规模集成电路器件中的应用方法，以提高大规模集成电路器件的性能。采用分子层外延法，在生长室中交替输送AlCl_3蒸气和He 15%O_2混合气体（压力为[[5 × 10_Pa]），首次在蓝宝石（0001）和（11^^-02）晶片上成功地在[[600 ℃]以上同质外延生长了单晶蓝宝石薄膜<-3>。蓝宝石薄膜的平均生长速率为[0.09nm/气体输送周期]。AlCl_3解离产生的AlCl（或AlCl_2）分子可能会形成单层吸附物，并与氧分子在基底上反应，形成单层Al_2O_3.还首次证实了在[[500 ℃]下用分子层外延法在单晶Nb（100）膜的清洁表面上外延生长蓝宝石（112^^-0）膜。Nb膜的表面可以被厚度为几埃的蓝宝石膜覆盖。这个过程对于制造单晶约瑟夫森结是重要的。