权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Synthesis of CBN Films by A New Plasma CVD Apparatus with Thermal Electron Radiation

新型等离子体CVD装置热电子辐射合成CBN薄膜

基本信息

批准号：
62460193
负责人：
ICHINOSE Yukio
金额：
$ 4.67万
依托单位：
Nagaoka University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1987
资助国家：
日本
起止时间：
1987 至 1988
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-62460193/
关键词：
cubic boron nitride zinc-blende type structure diamond cBN p- and n- type semiconductore hBN ultra high pressure and temperature techniques synthesis from gas plasma CVD 分光システム質量分析計プラズマ光分光 CBN 集量分析計 cBN膜

项目摘要

Several types of plasma CVD apparatus have been developed which enable the formation of cBN films effectively. In the development, it was essentially important to introduce high energy into reaction space electromagnetically and thermally for the excitation of plasma.A recently developed plasma CVD apparatus is composed of Knudsen-cell -type crucible in which a tungsten filament is mounted. The crucible is covered by a cap with a small-pinhole for the high energy plasma to jet out. The radio frequency coil is.around the crucible. With this apparatus the formation yield of cBN has been so such increased and BN film of about 100% cBN in volume fraction was formed in some range of optimum condition. It was found that the tungsten filament heating contributes to the cBN formation by an excitation of plasma gas to create high energy ions,radicals and atoms. The created atomic hydrogen was found to etch the deposited t-BN structure considerably to give high volume fraction of cBN in the BN films. A mechanism for the cBN formation was discussed qualitatively in relation to atomic potentials with sp^2 and sp^3 electron orbitals.Conclusively, a new concept on the formation mechanism of cBN (or diamond) has been constructed that cBN is made on substrate when the B-N-H radicals with the sp^3 state are trapped and quenched on steps or kinks as stable sites for the nucleation and growth of cBN.

几种类型的等离子体CVD装置已经被开发出来，它们能够有效地形成CBN薄膜。在发展过程中，在反应空间引入高能的电磁和热能对等离子体的激发至关重要。最近发展起来的等离子体CVD装置是由安装了钨丝的克努森槽式坩埚组成的。坩埚上覆盖着一个带有小针孔的盖子，供高能等离子体喷射出来。射频线圈环绕着熔炉。该装置大大提高了立方氮化硼的生成产率，在一定的最佳条件下，得到了体积分数约为100%的立方氮化硼薄膜。研究发现，钨丝加热通过等离子体气体激发产生高能离子、自由基和原子，从而促进了CBN的形成。发现生成的原子氢对沉积的t-BN结构有很大的刻蚀作用，从而在BN薄膜中获得了较高的CBN体积分数。定性地讨论了具有sp2和sp3电子轨道的原子势对CBN形成机理的影响。结论提出了CBN(或钻石)形成机理的新概念，即具有sp3态的B-N-H自由基在台阶或扭结处被捕获并猝灭，作为CBN成核和生长的稳定位置，在衬底上形成CBN。