Epitaxial Growth of Ferrite Films for Milliwave and Microwave on GaAs

GaAs 上毫米波和微波用铁氧体薄膜的外延生长

• 批准号: 04650261
• 负责人: GOMI Manabu
• 金额: $ 1.47万
• 依托单位: Japan Advanced Institute of Science and Technology (1993)Tokyo Institute of Technology (1992)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04650261/
• 关键词: Heteroepitaxial Growth; Ferrite Film; Garnet; Zirconia; Sputtering Method; Microwave Device; バッファー層; 蛍石型構造; 六方晶フェライト; スピネルフェライト

The establishment of epitaxial growth techniques between dissimilar materials is requisite to monolithic integrated devices for milliwave and microwave.In this project, we have studied on intermediate layr required for heteroepitaxially growing garnet ferrite films for microwave devices on semiconductor substrates and vice versa.As the intermediate layr, CeO_2 with the cubic fluorite crystal structure and Y_2O_3, In_2O_3 with the Sc_2O_3 type structure known to show epitaxy on Si and GaAs are promising candidates. We have revealed for the first time that these films are epitaxially grown in situ on (111)-oriented Gd_3Ga_5O_<12> garnet (GGG) substrates above 400ﾟC, 450ﾟC and 500ﾟC, respectively, by sputtering method. However, further epitaxy of Y_3Fe_5O_<12> garnet (YIG) films on these intermediate layrs formed on GGG has not yet been achieved. We have also sputter-deposited ZrO_2 films with the fluorite structure lower in crystal symmetry than that of CeO_2 as an intermediate layr. The ZrO_2 films (111)-oriented normal to the film plane were found to preferentially grow on (111) GGG substrates at 300ﾟCC - 400ﾟCC which is much lower than that of the films made by the evaporation method.We must further investigate the relationships between the epitaxy and the chemical bondings at the interface of the above dissimilar materials in details.

在该项目中，我们已经研究了在半径式和codore vera的结构中，我们已经研究了杂物增长的石榴石铁矿膜所需的中间层所需的中间位置，该项目需要在该项目中建立异种材料之间的外在增长技术。 Y_2O_3，IN_2O_3带有SC_2O_3的类型结构已知在SI和GAAS上显示情节的结构。我们首次揭示了这些薄膜在（111）面向（111）面向的GD_3GA_5O_ <12>石榴石（GGG）底物上分别以400 c，450 ﾟ c和500 c c和500 c c和500 c c的形式生长。但是，尚未实现Y_3FE_5O__ <12>石榴石（YIG）在GGG上形成的中间行动中的Y_3FE_5O_ <12>。我们还溅射了沉积的ZRO_2膜，其晶体对称性的氟结构比CEO_2作为中间Layr低。发现ZRO_2膜（111）面向胶片平面的面向膜平面的正常状态优先生长在300 cc -400 cc的GGG底物上，该基质比经济方法所制作的膜低得多。我们必须进一步研究上述材料的外观和化学键之间的关系之间的关系。

项目成果

M.Gomi: "High Rate Deposition of Bi : YIG Films by Electron Beam Evaporation" Ferrites : Proc.of The 6th Int.Conf.on Ferrites. 1584 (1992)

M.Gomi：“Bi 的高速沉积：电子束蒸发 YIG 薄膜”铁氧体：第六届铁氧体国际会议记录。

五味 学: "フェライト薄膜のGGG基板上へのヘテロエピ成長" 日本応用磁気学会学術講演会概要集. 416 (1993)

Manabu Gomi：“GGG 基板上铁氧体薄膜的异质外延生长”日本应用磁学会学术会议摘要 416 (1993)。

M.Gomi: "High Rate Deposition of Bi:YIG Films by Electron Beam Evaporation" Ferrites:Proc.of The 6th Int.Conf.on Ferrites. 1584-1587 (1992)

M.Gomi：“通过电子束蒸发实现 Bi:YIG 薄膜的高速率沉积”铁氧体：第六届铁氧体国际会议论文集。