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Epitaxial Growth of Ferrite Films for Milliwave and Microwave on GaAs

GaAs 上毫米波和微波用铁氧体薄膜的外延生长

基本信息

批准号：
04650261
负责人：
GOMI Manabu
金额：
$ 1.47万
依托单位：
Japan Advanced Institute of Science and Technology (1993)Tokyo Institute of Technology (1992)
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1993
项目状态：
已结题

项目摘要

The establishment of epitaxial growth techniques between dissimilar materials is requisite to monolithic integrated devices for milliwave and microwave.In this project, we have studied on intermediate layr required for heteroepitaxially growing garnet ferrite films for microwave devices on semiconductor substrates and vice versa.As the intermediate layr, CeO_2 with the cubic fluorite crystal structure and Y_2O_3, In_2O_3 with the Sc_2O_3 type structure known to show epitaxy on Si and GaAs are promising candidates. We have revealed for the first time that these films are epitaxially grown in situ on (111)-oriented Gd_3Ga_5O_<12> garnet (GGG) substrates above 400ﾟC, 450ﾟC and 500ﾟC, respectively, by sputtering method. However, further epitaxy of Y_3Fe_5O_<12> garnet (YIG) films on these intermediate layrs formed on GGG has not yet been achieved. We have also sputter-deposited ZrO_2 films with the fluorite structure lower in crystal symmetry than that of CeO_2 as an intermediate layr. The ZrO_2 films (111)-oriented normal to the film plane were found to preferentially grow on (111) GGG substrates at 300ﾟCC - 400ﾟCC which is much lower than that of the films made by the evaporation method.We must further investigate the relationships between the epitaxy and the chemical bondings at the interface of the above dissimilar materials in details.

建立异种材料间的外延生长技术是实现毫米波和微波单片集成器件的必要条件。本课题研究了在半导体衬底上异质外延生长微波器件石榴石铁氧体薄膜所需的中间层，以及反之亦然。作为中间层，采用立方萤石晶体结构的CeO_2和 Y_2O_3、In_2O_3 和 Sc_2O_3 型结构已知可在 Si 和 GaAs 上外延，是有希望的候选者。我们首次揭示了这些薄膜是通过溅射方法分别在400℃、450℃和500℃以上的温度下在(111)取向的Gd_3Ga_5O_<12>石榴石(GGG)衬底上原位生长的。然而，尚未实现在GGG上形成的这些中间层上进一步外延Y_3Fe_5O_12石榴石(YIG)薄膜。我们还用溅射沉积的ZrO_2薄膜作为中间层，其晶体对称性低于CeO_2的萤石结构。研究发现，在(111)GGG衬底上，在300°CC - 400°CC温度下，垂直于膜面取向的(111)ZrO_2薄膜优先生长，远低于蒸发法制备的薄膜。我们必须进一步详细研究外延生长与上述异种材料界面化学键的关系。