Atomic structures on 1*1 Si (111) surface at high temperatur

高温下1*1 Si(111)表面原子结构

• 批准号: 06640435
• 负责人: NATORI Akiko
• 金额: $ 1.02万
• 依托单位: The University of Electro-Communications
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06640435/
• 关键词: Si (111); surface melting; Tersoff-Dodson potential; Monte Carlo simulation; 短距離秩序構造; スティリンジャ・ウェーバーポテンシャル; テルソフ型ポテンシャル; ステップバンチング

Surface atomic structures on Si (111) are investigated. below and above T_c of 7*7 surface reconstruction.Below T_c.the step structure on vicinal Si (111) was studied based on TSK (terrace step kink) model, by using Monte Carlo simulation. The observed step bunching structure induced by 7*7 surface reconstruction was explained by competition between the attractive interaction among 7*7 reconstruction units and the repulsive interaction among steps.Above T_c.the surface atomic structure and the atomic dynamics on 1*1 surface was investigated by using empirical Tersoff-Dodson inter-atomic potential. It is confirmed by the observation of RHEED.LEED and STM.that 1*1 surface is covered by Si adatoms. From the calculation of the surface potential map of a Si adatom. both the surface diffusion coefficient and the evaporation rate of a Si adatom were evaluated. From the Monte Carlo simulation below the bulk melting temperature, it was shown that the surface melting occurd on Si (111) provided the surface was covered by Si adatoms higher than the critical coverage. The number of Si layrs which show the surface melting depends on temperature. Si atoms in the melting layrs are moving about with the diffusion coefficient as large as that of a Si adatom on (111) surafec.

研究了Si(111)表面的原子结构。在7×7表面重构的T_c以下和T_c以上，用蒙特卡罗模拟方法研究了邻近Si(111)面上的台阶结构。观察到的7*7表面重构引起的阶跃聚束结构可以用7*7重构单元之间的吸引相互作用和步骤间的排斥相互作用来解释。对于T_C，用经验的Tersoff-Dodson原子间势研究了1*1表面的原子结构和原子动力学。RHEED、LEED和扫描电子显微镜的观察证实，1*1表面覆盖有Si吸附原子。通过对硅吸附原子表面电势图的计算，得到了表面电势图。计算了硅吸附原子的表面扩散系数和蒸发速率。体熔融化温度以下的蒙特卡罗模拟表明，当Si(111)表面被高于临界覆盖率的Si原子覆盖时，Si(111)表面发生了熔化。表明表面熔化的硅层数与温度有关。熔化层中的硅原子以与硅原子在(111)表面上的扩散系数一样大的扩散系数移动。

项目成果

A. Natori, M. Murayama and H. Yasunaga: "Atomic structures of Ag on √<3>×√<3> Ag/Si(111) and on 7×7 Si(111)" Surface Science. (1995)

A. Natori、M. Murayama 和 H. Yasunaga：“Ag 在 √<3>×√<3> Ag/Si(111) 和 7×7 Si(111) 上的原子结构”表面科学 (1995)。

A.Natori and T.Arai: "Step bunching induced by 7*7 reconstruction on vicinal Si (111) surfaces" Proc.22nd Int.Conf.on Physics of Semiconductors. 447-450 (1995)

A.Natori 和 T.Arai：“邻位 Si (111) 表面上 7*7 重建引起的阶梯聚束”Proc.22nd Int.Conf.on 半导体物理学。

A.Natori: "Atomic structures of Ag on √<3>×√<3>Ag/Si(111) and on 7×7 Si(111)" Surf.Sci.(1996)

A.Natori：“Ag 在 √<3>×√<3>Ag/Si(111) 和 7×7 Si(111) 上的原子结构”Surf.Sci.(1996)

A.Natori,T.Suzuki and H.Yasunaga: "Atomic structures and atomic dynamics on ‘1×1'Si(111) at high temperatures" Surf.Sci.(1996)

A. Natori、T. Suzuki 和 H. Yasunaga：“高温下‘1×1’Si(111) 的原子结构和原子动力学”Surf.Sci.(1996)

A.Natori: "Step bunching induced by 7×7 reconstruction on vicinal Si(111)" Proc.22nd Int.Conf.On Physics of Semicarductors. 1. 447-450 (1995)

A.Natori：“邻位 Si(111) 上 7×7 重建引起的步骤聚束”Proc.22nd Int.Conf.On 半导体物理学 1. 447-450 (1995)。