Research on developement of the laser excited by a semiconductor diode in laser beam lithography

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From the measurement on the absorption and the photoluminecent spectrums of Nd-doped LiNb03 (LN), we have obtained the following results(1) Two LN subtsrates, in which the Nd ion of 1 and 3 weight % had been doped, respectively, were compared on above efficiencies. As a result, the latter had the greatest photoluminecence of in the incidence of TM polarized light.(2) Their spectrums were found to exhibit the temperture dependence such that the magnitude was raised withthe increase of temperature untill 90ﾟ C, but dcreased from 90ﾟ C to 150ﾟ C.(3) For the 3% Nd-dopepd LN, we had observed only the spontaneous emission, not atainning to the population inversion.Next, the blue light generation due to the second harmonic generation (SHG) process in KNb03 crystal have been examined from both aspects of experiment and calculation. The results are as follows.(1) Due to the presence of astigamatic aberration in the laser diode, the conventional phase matching was modified so as to include the beam radius dependence of a focusing light.(2) Above aberration makes the phase matching wavelength shift into the side of longer wavelength. At room temperature, the phase matching angles are not existed in the crystalographic X-Y plane, due to the astigmatic aberration.(3) The blue light was occured in the phase matching conditions of the beam radius of 100mum, the lasing wavelength of 863.5nm under peltier-cooling of 12.5ﾟ C with respect to a laser diode, and keeping the SHG crystal of KNb03 at the temperature of 38.6ﾟ C.