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Research on developement of the laser excited by a semiconductor diode in laser beam lithography

激光束光刻中半导体二极管激发激光器的研究进展

基本信息

批准号：
06650064
负责人：
SAIGA Noriaki
金额：
$ 1.15万
依托单位：
YONAGO NATIONAL COLLEGE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06650064/
关键词：
laser beam lithography laser excited by a laser diode second harmonic generation astigmatic aberration Nd ion phase matching temperature tuning レーザ描画装置半導体レーザ楕円型ガウス光ペルチェ素子青色レーザ光レーザ遷移蛍光分光特性第2高調液発生

项目摘要

From the measurement on the absorption and the photoluminecent spectrums of Nd-doped LiNb03 (LN), we have obtained the following results(1) Two LN subtsrates, in which the Nd ion of 1 and 3 weight % had been doped, respectively, were compared on above efficiencies. As a result, the latter had the greatest photoluminecence of in the incidence of TM polarized light.(2) Their spectrums were found to exhibit the temperture dependence such that the magnitude was raised withthe increase of temperature untill 90ﾟ C, but dcreased from 90ﾟ C to 150ﾟ C.(3) For the 3% Nd-dopepd LN, we had observed only the spontaneous emission, not atainning to the population inversion.Next, the blue light generation due to the second harmonic generation (SHG) process in KNb03 crystal have been examined from both aspects of experiment and calculation. The results are as follows.(1) Due to the presence of astigamatic aberration in the laser diode, the conventional phase matching was modified so as to include the beam radius dependence of a focusing light.(2) Above aberration makes the phase matching wavelength shift into the side of longer wavelength. At room temperature, the phase matching angles are not existed in the crystalographic X-Y plane, due to the astigmatic aberration.(3) The blue light was occured in the phase matching conditions of the beam radius of 100mum, the lasing wavelength of 863.5nm under peltier-cooling of 12.5ﾟ C with respect to a laser diode, and keeping the SHG crystal of KNb03 at the temperature of 38.6ﾟ C.

通过对掺钕铌酸锂（LN）的吸收光谱和光致发光光谱的测量，我们得到了以下结果：（1）比较了掺钕量分别为1%和3%（重量）的两种LN衬底的上述效率。结果表明，在TM偏振光入射下，后者的光致发光最大。(2)发现它们的光谱具有温度依赖性，在90 ℃以前，其幅度随温度的升高而增大，但在90 ℃ ~ 150 ℃范围内，其幅度随温度的升高而减小。(3)对于掺钕量为3%的铌酸钾晶体，我们只观察到了自发辐射，没有观察到粒子数反转。其次，我们从实验和计算两个方面研究了KNb_（03）晶体中二次谐波（SHG）过程产生的蓝光。结果如下。(1)由于在激光二极管中存在散光像差，传统的相位匹配被修改，以便包括聚焦光的光束半径依赖性。(2)上述畸变使相位匹配波长向长波方向移动。在室温下，由于晶体像差的存在，晶体X-Y平面内不存在相位匹配角。(3)在光束半径为100 μ m、激光波长为863.5nm、半导体激光器冷却温度为12.5 ℃、倍频晶体KNb_（03）温度为38.6 ℃的相位匹配条件下，获得了蓝光。