Direct measurements of of grain boundary properties and mechanism of electroceramics.
Direct measurements of of grain boundary properties and mechanism of electroceramics.
批准号:
06650738
负责人:
SAKURAI Osamu
金额:
$1.28万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 --
中文摘要
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英文摘要
The electrical properties in very narrow region of a single grain boundary in Ladoped SrTiO_3 crystals were measured by using the micromanipulatoR.The sample having one grain boundary was prepared from semi conductive SrTiO_3 crystals having mosaic structure prepared by xenon-arc image floating zone method. The nonlinear relation of voltage and current was observed in the every grain boundaries. Although there were no electrical effects from the neighbor grains in the single grain boundary sample, the break down voltage (Vb) and nonlinear coefficient (alpha) varied 0.5 to 3.5 V and 1 to 7 respectively. The varistor characteristic was independent from the directions of crystals. After heat treatment in reduced atmosphere, the varistor characteristics was disappears. The reduced samples were re-oxidized at high temperature, then teh varistor characteristics were observed again. The voltage-current characteristics of grain boundary were changed reversibly by oxidation or reduction of the sample. The break down voltage was increase with oxidation temperature and time, but nonlinear coefficient (alpha) was almost constant.In the sample, cut the SrTiO_3 FZ-single crystal into two pic es and oxidized them and then contacted them mechanically in same direction before separation, the nonlinear relation of voltage and current was observed same as the grain boundary in the FZ-crystals.
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O.Sakurai: "Electrical Properties of Single Grain Boundary by Their Direct Measurments." Proceedings of Japan-US Workshop on Functional Fronts in Advanced Ceramics. 14B. 1711-1712 (1994)
O.Sakurai:“通过直接测量单晶界的电特性。”
DOI:
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发表时间:
期刊:
影响因子:
--
作者:
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通讯作者:
O.Sakurai, N.Wakiya, K.Shinozaki and N.Mizutani: "Electrical Properties of Single Grain Boundary by Their Direct Measurments." Proceedings of Japan-US Workshop on Functional Fronts in Advanced Ceramics, PA-. (1994)
O.Sakurai、N.Wakiya、K.Shinozaki 和 N.Mizutani:“通过直接测量得出单晶界的电特性”。
DOI:
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发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
O.Sakurai, M.Soeda, K.Shinozaki and N.Mizutani: "The electrical properties of a single grain boundary in SrTiO_3 FZ-crystal (in Japanese)." The Abstract of 15th Electronics Devision Meeting of Ceram.Soc.Japan. A-13. 25 (1995)
O.Sakurai、M.Soeda、K.Shinozaki 和 N.Mizutani:“SrTiO_3 FZ 晶体中单个晶界的电性能(日语)”。
DOI:
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发表时间:
期刊:
影响因子:
--
作者:
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通讯作者:
[Oral presentation] M.Soeda, O.Sakurai, H.Funakubo, K.Shinozaki and N.Mizutani: "The varistor characteristics and structures of a single grain boundary in FZ-crystals of SrTiO_3. (in Japanese)." The Abstract of 1994 Annual Meeting of Ceram.Soc.Japan, 1G17
[口头报告] M.Soeda、O.Sakurai、H.Funakubo、K.Shinozaki 和 N.Mizutani:“SrTiO_3 FZ 晶体中单个晶界的压敏电阻特性和结构。(日语)。”
DOI:
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发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Reserch of special properties of junction interface of semiconductive single grainboundary.
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批准号:08650779
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.41万
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财政年份:1996
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负责人:SAKURAI Osamu
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依托单位: