Ultra-high vacuum low temperature scanning probe microscope (UHV-LTSPM)

超高真空低温扫描探针显微镜（UHV-LTSPM）

• 批准号: 444728977
• 金额: --
• 依托单位: Universität Siegen
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2020
• 资助国家: 德国
• 起止时间: 2019-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/444728977?language=en
• 关键词: Ultra; vacuum; low; temperature; scanning

The ultra-high vacuum scanning probe microscope (UHV-LTSPM) will constitute a key tool in the research field “Nanoscience and Nanotechnology”: We will mainly use it for the precise determination of the geometric and electronic structure of advanced two-dimensional materials. I will enable preparation and characterization of nanomaterials using the methods of surface science. In particular, the LTSPM can perform spectroscopy with the highest spatial resolution and high resolution in energy. Atomic force microscopy (AFM) will allow us to go beyond our previous studies as it enables the study of individual chemical bonds as well as the characterization of insulating systems. The apparatus significantly widens the accessible temperature range.In detail we will address the following topics: (i) Correlated electrons in two-dimensional metals, (ii) heterostructures of transition metal dichalcogenides, (iii) classification and characterization of the electronic properties of defects in hexagonal boron nitride (potential single photon sources), (iv) investigation of ultrathin ferroelectric materials (e. g. GeSe) as candidates for sensors and non-volatile memory, and (v) characterization of epitaxially grown tin perovskites as alternative materials for photovoltaics with special attention to the influence of defects.

超高真空扫描探针显微镜（UHV-LTSPM）将构成研究领域“纳米科学和纳米技术”的关键工具：我们将主要使用它来精确确定先进二维材料的几何和电子结构。我将使纳米材料的制备和表征使用表面科学的方法。特别地，LTSPM可以执行具有最高空间分辨率和高能量分辨率的光谱学。原子力显微镜（AFM）将使我们能够超越我们以前的研究，因为它使个别化学键的研究以及绝缘系统的表征。详细地讲，我们将讨论以下几个问题：（i）二维金属中的关联电子，（ii）过渡金属二硫族化物的异质结构，（iii）六方氮化硼中缺陷的电子性质的分类和表征（潜在的单光子源），（iv）铁电材料的研究（例如，铁电材料中的铁电材料）。G. GeSe）作为传感器和非易失性存储器的候选物，以及（v）外延生长的锡钙钛矿作为光致发光的替代材料的表征，特别注意缺陷的影响。