VUV light source for high-resolution (energy/momentum/spatial) photoemission

用于高分辨率（能量/动量/空间）光电发射的 VUV 光源

• 批准号: 445238239
• 金额: --
• 依托单位: Julius-Maximilians-Universität Würzburg
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2020
• 资助国家: 德国
• 起止时间: 2019-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/445238239?language=en
• 关键词: VUV; light; source; resolution; energy

The research focus of the applicant's group is on synthesis of and experiments on ultrathin epitaxial adsorbate layers on semiconductor substrates, from sub-monolayer coverages to film thicknesses of several 10 nm. The scientific interest is targeted at unusual electronic properties of 1D atomic chains, 2D triangular lattices with strong electronic correlations, and topological insulators with their spin-polarized edge and boundary states. The central experimental methods for these investigations are angle-resolved photoelectron spectroscopy (ARPES) and scanning tunneling microscopy and spectroscopy (STM/STS). Due to their intrinsic surface character all film systems have to be synthesized and studied in situ (i.e., under ultra high vacuum conditions). The current ARPES system used for these experiments is reaching its limits in terms of spatial and energy resolution as well as with respect to efficient sample throughput. Therefore, it is planned to upgrade the system by a dedicated state-of-the art light source for vacuum ultraviolet (VUV) radiation, allowing to overcome the present limitations and facilitating greatly improved research opportunities.

申请人小组的研究重点是半导体衬底上的外延吸附层的合成和实验，从亚单层覆盖到几个10 nm的膜厚度。科学兴趣的目标是一维原子链，具有强电子相关性的二维三角晶格以及具有自旋极化边缘和边界状态的拓扑绝缘体的不寻常电子性质。这些调查的中心实验方法是角分辨光电子能谱（ARPES）和扫描隧道显微镜和光谱（STM/STS）。由于其固有的表面特征，所有薄膜系统都必须原位合成和研究（即，在超高真空条件下）。目前用于这些实验的ARPES系统在空间和能量分辨率方面以及在有效的样品通量方面都达到了极限。因此，计划通过专门的真空紫外线（VUV）辐射光源来升级该系统，以克服目前的限制并促进大大改善研究机会。