VUV light source for high-resolution (energy/momentum/spatial) photoemission

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The research focus of the applicant's group is on synthesis of and experiments on ultrathin epitaxial adsorbate layers on semiconductor substrates, from sub-monolayer coverages to film thicknesses of several 10 nm. The scientific interest is targeted at unusual electronic properties of 1D atomic chains, 2D triangular lattices with strong electronic correlations, and topological insulators with their spin-polarized edge and boundary states. The central experimental methods for these investigations are angle-resolved photoelectron spectroscopy (ARPES) and scanning tunneling microscopy and spectroscopy (STM/STS). Due to their intrinsic surface character all film systems have to be synthesized and studied in situ (i.e., under ultra high vacuum conditions). The current ARPES system used for these experiments is reaching its limits in terms of spatial and energy resolution as well as with respect to efficient sample throughput. Therefore, it is planned to upgrade the system by a dedicated state-of-the art light source for vacuum ultraviolet (VUV) radiation, allowing to overcome the present limitations and facilitating greatly improved research opportunities.