Structure control in atomic scale of relaxors with morphotropic phase boundary composition

具有同形相界组成的弛豫剂原子尺度的结构控制

• 批准号: 14204031
• 负责人: UESU Yoshiaki
• 金额: $ 31.78万
• 依托单位: Waseda University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14204031/
• 关键词: Relaxor; Perovskite oxide; Pulse-laser deposition method; Thin films; Morphotropic phase boundary; Dielectric constant; Electric-field-induced resistant switching; 強誘電体薄膜; レーザーデポジション成膜装置; 圧電性; 誘電率; 量子常誘電体; 強誘奄体薄膜

(1)Syntheses of super lattice thin films of Pb(Sc1/2Nb1/2)O3/PbTiO3 and dielectric propertiesHighly oriented Pb(Sc_<1/2>Nb_<1/2>)O_3 (PSN) and PbTiO_3 (PT) super-lattice thin films are synthesized on single-stepped SrTiO_3 (001) substrates by pulsed laser deposition (PLD) technique. SrRuO_3 is deposited on the substrate as a bottom electrode layer for dielectric measurements. The orientation and structure of the films are checked by X-ray diffraction (XRD) method. Clear super-lattice reflections are observed by XRD and the period of super-lattice, the correlation length and the mosaicity are calculated from XRD profiles of the super-lattice. Real part of the dielectric constant is about 350 at room temperature in the frequency range of 102〜105 Hz.(2)Electric-field-induced resistance switching observed in transition-metal-oxide thin filmsWe show that polarity-dependent, nonvolatile resistance switching by electric field occurs in the thin film of various transition-metal oxides in almost the same manner. This result indicates that contrary to the general acceptance, perovskite manganite is by no means a special compound for this phenomenon. It is also suggested that the resistance switching is not dominated by a detailed electronic structure of each sample, but dominated by a more general origin, e.g., crystalline defect.

（1）Pb（Sc_（1/2）Nb_（1/2））O_3/PbTiO_3超晶格薄膜的制备及介电性能采用脉冲激光沉积（PLD）技术在单台阶SrTiO_3（001）衬底上制备了高取向Pb（Sc_（1/2）Nb_（1/2））O_3（PSN）和PbTiO_3（PT）超晶格薄膜。SrRuO_3沉积在衬底上作为介电测量的底电极层。用X射线衍射（XRD）方法对薄膜的取向和结构进行了分析。通过XRD观察到清晰的超晶格反射，并由超晶格的XRD剖面计算出超晶格的周期、相关长度和镶嵌度。介电常数的真实的部分在室温下在102 ~ 105 Hz的频率范围内约为350。（2）在过渡金属氧化物薄膜中观察到的电场感生电阻开关我们发现，在各种过渡金属氧化物薄膜中，电场引起的非易失性电阻开关几乎以相同的方式发生。这一结果表明，与普遍接受的相反，钙钛矿锰氧化物绝不是这种现象的特殊化合物。还建议电阻切换不受每个样品的详细电子结构支配，而是受更一般的起源支配，例如，晶体缺陷

项目成果

リラクサーの謎-不均一構造をもつ誘電体の巨大応答-

弛豫剂之谜 - 结构不均匀的电介质的巨大响应 -

• 发表时间: 2005
• 期刊: パリティ(丸善) 20
• 作者: 山内直人;〓永佳甫;高橋智子;上江洲由晃
• 通讯作者: 上江洲由晃

Y.Yamada, Y.Uesu et al.: "Symmetry of high-piezoelectric Pb based complex perovskites at the morphotoropic phase boundary II"J.Phys.Soc.Japan. 71,No.3. 966-970 (2002)

Y.Yamada、Y.Uesu 等人：“高压电铅基复合钙钛矿在同向相界 II 处的对称性”J.Phys.Soc.Japan。

Polar order in quantum paraelectric SrTi16O3 and SrTi16O3 at low temperature

低温下量子顺电 SrTi16O3 和 SrTi16O3 的极性顺序

• 发表时间: 2004
• 期刊: J.Phys.Soc.Jpn.(Letters) 73,No.5
• 作者: Y.Uesu;R.Nakai;C.Menoret;J-M.Kiat;M.Itoh;T.Kyomen
• 通讯作者: T.Kyomen

Backward-wave four wave mixing and coherent oscillation in CdF2:Ga,Y

CdF2:Ga,Y中的后向波四波混频和相干振荡

• 发表时间: 2004
• 期刊: Appl.Phys. B78
• 作者: Y.Uesu;K.Yasukawa;N.Saito;S.Odoulov et al.
• 通讯作者: S.Odoulov et al.

分極反転デバイスの基礎と応用

偏振反转器件的基础和应用

• 发表时间: 2005
• 作者: Iwasaki;S.;H.Okamoto;H.Hanado;K.K.Reddy;H.Horie;H.Kuroiwa;H.Kumagai;上江洲由晃(共著)
• 通讯作者: 上江洲由晃(共著)