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RESEARCH ON BASIC TECHNOLOGIES FOR THE REALIZATION OF CATE CONTROLLED SPINTRANSISTOR

顺控自旋晶体管实现基础技术研究

基本信息

批准号：
17206028
负责人：
YOH Knaji
金额：
$ 31.12万
依托单位：
Hokkaido University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2007
项目状态：
已结题

项目摘要

High quality magnetite (Fe_3O_4) was found to be grown on (100) InAs surface. Magnetite film has become a candidate of high efficiency spin injector to be applied to spin transistor. On the other hand, we have also demonstrated gate controlled spin current oscillation due to spin-orbit interaction in Datta-Das type spin transistor structure based on Fe electrode and InAs-based heterostructure transistor at room temperature. In order to justify the observed experimental results of our spin FET characteristics, we have performed Monte Carlo Simulation taking account of Dyakonov - Perel mechanism. In a Datta-Das type spin transistor structure, it was found that vanishing of spin relaxation takes place when two spin orbit interaction, Rashba term and Dresselhaus term, equally contribute in InAs-based spin FET structure. Furthermore, it was found that the gate controlled spin precession takes place and resultant current oscillation should be observed even at room temperature when device operates in non-ballistic regime. Spin amplitude was also found to increase with the increase of lateral electric field (or drain voltage at given source drain distance). These predictions well explain what we have been observing in our Datta-Das type spin transistors. Other remarkable results include estimation of stay field near ferromagnetic electrode by micromagnetics calculation and thermal stability of iron/arsenide interface or thermodynamic calculation of stable compounds of iron and arsenic. Stray field near Fe wire film structure was found to be small except found in compounds such as As_2F (anti-ferro), AsF (anti-ferro), AsF_2 (normal metal) which well explains thermally unstable interface of Fe and InAs and suggests more stable spin injector material such as magnetite or iron silicide are suited for spin injector of spin FET.

在(100)InAs表面生长了高质量的磁铁矿(Fe3O4)。磁铁矿薄膜已成为应用于自旋晶体管的高效自旋注入器的候选材料。另一方面，我们还研究了基于Fe电极和InAs异质结晶体管的Datta-Das型自旋晶体管结构在室温下由于自旋-轨道相互作用引起的栅控自旋电流振荡。为了验证自旋场效应管特性的实验结果，我们进行了考虑Dyakonov-Perel机制的蒙特卡罗模拟。在Datta-Das型自旋晶体管结构中，当两个自旋轨道相互作用Rashba项和Dresselhaus项在InAs自旋场效应管结构中贡献相等时，自旋弛豫消失。此外，研究还发现，当器件工作在非弹道区时，即使在室温下，也会发生栅极控制的自旋进动以及由此产生的电流振荡。自旋幅度也随着横向电场(或在给定源漏距离下的漏极电压)的增加而增加。这些预测很好地解释了我们在Datta-Das型自旋晶体管中观察到的情况。其他值得注意的结果包括通过微磁学计算和铁/砷化合物界面的热稳定性或铁和砷的稳定化合物的热力学计算估计铁磁电极附近的驻留磁场。除了As_2F(反铁)、ASF(反铁)、AsF_2(正常金属)等化合物外，Fe线膜结构附近的杂散场很小，这很好地解释了Fe和InAs的热不稳定界面，并表明更稳定的自旋注入器材料如磁铁矿或硅化铁适合作为自旋场效应管的自旋注入器。