Establishment of inverter surge insulation and evaluation technology in next generation power electronic devices and equipment
Establishment of inverter surge insulation and evaluation technology in next generation power electronic devices and equipment
批准号:
18206029
负责人:
HIKITA Masayuki
金额:
$25.21万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2006
资助国家:
日本
项目状态:
已结题
起止时间:
2006 至 2009
中文摘要
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英文摘要
A package method using gas insulated medium is proposed for power semiconductor devices in the high temperature range to 450 degree C and high voltage (1.2kV) region. Experiments were performed on discharge inception properties by changing kind and pressure of gas medium, and a prototype package was made. In addition, SiC inverter was developed so as to succeed in driving a motor. The inverter was installed in an electric vehicle system with 600W class. Furthermore, a partial discharge measuring system for inverter surge was constructed using optical and electromagnetic detection sensors. It was found that relative humidity gives the most significant effect on partial discharge inception voltage.
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Comparison of Electromagnetic Wave, Light Intensity and Electric Charge of PD on Crossed Magnet Wires under Repetitive Impulses
重复脉冲下交叉磁线上局部放电的电磁波、光强和电荷比较
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[S. Okada, K. Fukunaga, K. Yamaguchi, S. Ohtsuka, K. Kimura, M. Hikta]
通讯作者:
M. Hikta
インダクタンス負荷におけるSic-VJFETのスイッチング特性に及ぼすゲート抵抗の影響
电感负载下栅极电阻对Sic-VJFET开关特性的影响
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[吉永啓祐, プーンヤケットソムパッタナー, 牧健太郎, 原田克彦, 大塚信也, 匹田政幸]
通讯作者:
匹田政幸
繰返しインパルス電圧下のエナメル線クロス試料における発光像によるPD発生数の検討
使用重复脉冲电压下漆包线布样品的发光图像检查局部放电发生次数
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[岡田 真一, 福永 顕一, 山口 浩平, 大塚 信也, 匹田 政幸]
通讯作者:
匹田 政幸
Switching Characteristics of SiC-VJFET for Inductive Load
感性负载用 SiC-VJFET 的开关特性
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[A. Kikuchi, K. Yoshinaga, K. Harada, S. Ohtsuka, M. Hikita]
通讯作者:
M. Hikita
繰返し両極性インパルス電圧下でのPDIVプリストレス効果
重复双极冲击电压下的PDIV预应力效应
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[福永 顕一, 岡田 真一, 山口 浩平, 大塚 信也, 匹田 政幸]
通讯作者:
匹田 政幸
共 7 条
Research on Electrical Conduction Mechanism and Withstand Voltage Properties after Current Limiting of PTC (Positive Temperature Coefficient ) Device
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批准号:14350147
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.38万
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财政年份:2002
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负责人:HIKITA Masayuki
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依托单位:
Study on Mitigation of Charging and Discharge of Energy Apparatus in Space Environment
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批准号:11450113
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$3.84万
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财政年份:1999
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负责人:HIKITA Masayuki
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依托单位:
Study on Electromagnetic Environment around Electric Power Facitities
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批准号:07405013
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$10.18万
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财政年份:1995
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负责人:HIKITA Masayuki
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依托单位:
海外基金