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Fundamental Clarification of Triboelectromagnetic Phenomena andDevelopment of Triboplasma Application Technology

Fundamental Clarification of Triboelectromagnetic Phenomena andDevelopment of Triboplasma Application Technology
摩擦电磁现象的基本阐明及摩擦等离子体应用技术的发展
批准号:
20246035
负责人:
NAKAYAMA Kleiji
金额:
$29.95万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2012

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中文摘要
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英文摘要
Fundamental mechanism of the triboelectromagnetic phenomena was analyzed focusing on the triboplasma generation and the guideline to the development of the triboplasma application technology was proposed. It was found that the triboplasma is generated even inside the sliding contact, and the photon emission from the inside of sliding contact under oil lubrication was shown to be caused by the excitation of the dissolved gas molecules. The temperature rise of the triboplasma was successfully measured to give that the triboplasma is non-equilibrium low temperature plasma. The mechanism of photon emission from the sliding surface was analyzed to be caused by the attack of the electrons in the plasma, and the triboplasma generationwas theoretically analyzed to give the potential and the charged particle distributions in the gap. Further, the mechanism of triboplasma generation under oil lubrication was clarified to be due to the electron avalanche process in the cavity formed in the rear gap of the sliding contact with a new model. It was proposed that triboplasma can be controlled by magnetic field application and control of the electric resistivity of tribomaterials.
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Characterization of crystallographic defects in homoepitaxial diamond films by synchrotron X-ray topography and cathodoluminescence ECSCRM 2010
通过同步加速器 X 射线形貌和阴极发光表征同质外延金刚石薄膜中的晶体缺陷 ECSCRM 2010
DOI: --
发表时间: 2010
期刊:
影响因子: --
作者: [H.Umezawa, Y.Kato, A.M.M.Omer, H.Yamaguchi, S.Shikata]
通讯作者: S.Shikata
TSEE Phenomena from Defects in Insulators Formed by Scratching and Electron Bombardment
划痕和电子轰击形成的绝缘体缺陷的 TSEE 现象
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [A.Gatsenko, Keiji Nakayama]
通讯作者: Keiji Nakayama
DOI: 10.1088/0022-3727/42/7/075307
发表时间: 2009-04-07
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
影响因子: 3.4
作者: [Matta, C., Eryilmaz, O. L., Nakayama, K.]
通讯作者: Nakayama, K.
Luminescence behavior of nitrogen-doped homoepitaxial single crystal diamond by microwave plasma-assisted chemical vapor deposition
微波等离子体辅助化学气相沉积氮掺杂同质外延单晶金刚石的发光行为
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [H.Watanabe, R.Hirano, K.Itoh, M.Tajima, S.Shikata]
通讯作者: S.Shikata
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